Showing 361 - 380 results of 685 for search '"semiconductors"', query time: 0.04s Refine Results
  1. 361
  2. 362

    Assessment of Ruthenium Dye N719 Adsorption Kinetics in Mesoporous TiO2 Films of Dye-Sensitized Solar Cells via Nanoplasmonic Sensing by Fahd M. Rajab

    Published 2018-01-01
    “…A dye monolayer formation on a semiconductor surface is critical for efficient dye-sensitized solar cells. …”
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    Article
  3. 363

    Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling by Benjamin Harpt, J. Corrigan, Nathan Holman, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, Rusko Ruskov, Charles Tahan, William D. Oliver, R. McDermott, Mark Friesen, M. A. Eriksson

    Published 2025-01-01
    “…Our experiments are performed with the qubit and resonator frequencies detuned by ~10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the ‘ultra-dispersive’ regime of circuit quantum electrodynamics.…”
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  4. 364
  5. 365

    Memristor-based feature learning for pattern classification by Tuo Shi, Lili Gao, Yang Tian, Shuangzhu Tang, Jinchang Liu, Yiqi Li, Ruixi Zhou, Shiyu Cui, Hui Zhang, Yu Li, Zuheng Wu, Xumeng Zhang, Taihao Li, Xiaobing Yan, Qi Liu

    Published 2025-01-01
    “…However, since biological organs may operate differently from semiconductor devices, deep models usually require dedicated hardware and are computation-complex. …”
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    Article
  6. 366

    Photocatalytic Enhancement for Solar Disinfection of Water: A Review by J. Anthony Byrne, Pilar A. Fernandez-Ibañez, Patrick S. M. Dunlop, Dheaya M. A. Alrousan, Jeremy W. J. Hamilton

    Published 2011-01-01
    “…This paper presents a critical review concerning semiconductor photocatalysis as a potential enhancement technology for solar disinfection of water.…”
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    Article
  7. 367

    Functionalized Activated Carbon Derived from Biomass for Photocatalysis Applications Perspective by Samira Bagheri, Nurhidayatullaili Muhd Julkapli, Sharifah Bee Abd Hamid

    Published 2015-01-01
    “…Due to the excellent oxidizing characteristics, cheapness, and long-term stability, semiconductor materials have been used immensely in photocatalytic reactors. …”
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    Article
  8. 368

    Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field by Gang Xu, Yelu He

    Published 2021-01-01
    “…Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. …”
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  9. 369
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  11. 371
  12. 372

    Metrology of metasurfaces: optical properties by Nicolas Kossowski, Yanel Tahmi, Amir Loucif, Martin Lepers, Benoit Wattellier, Guillaume Vienne, Samira Khadir, Patrice Genevet

    Published 2025-01-01
    “…Relying on planar nanofabrication processes closely akin to the semiconductor industry, metasurface technology could benefit from cost-effective and potentially large-scale fabrication techniques forthwith. …”
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  13. 373
  14. 374

    Controllable Electrochemical Synthesis and Photovoltaic Performance of Bismuth Oxide/Graphene Oxide Nanostructure Arrays by Fatma Bayrakçeken Nişancı

    Published 2022-09-01
    “…The electrodeposition coated graphene oxide (GO) sheets on semiconductor metal oxide substrates are reduced to produce transparent, flexible, and conductive electrodes. …”
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    Article
  15. 375

    METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS by V. A. Pilipenko, A. N. Petlitsky, V. A. Gorushko, S. V. Shvedov, V. V. Ponaryadov

    Published 2015-04-01
    “…The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.…”
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  16. 376

    On the existence of solution of a two-point boundary value problem in a cylindrical floating zone by Shi Yongdong, Du Liangsheng

    Published 2001-01-01
    “…Existence of one solution for a two-point boundary value problem with a positive parameter Q arising in the study of surface-tension-induced flows of a liquid metal or semiconductor is studied. On the basis of the upper-lower solution method and Schauder's fixed point theorem, it is proved that the problem admits a solution when 0≤Q≤12.683. …”
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  17. 377

    Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes by Hashem Shahroosvand, Parisa Abbasi, Mohsen Ameri, Mohammad Reza Riahi Dehkordi

    Published 2011-01-01
    “…The metal complexes (RuII (phen)2(phendione))(PF6)2(1), [RuII (phen)(bpy)(phendione))(PF6)2 (2), and (RuII (bpy)2(phendione))(PF6)2 (3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. …”
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  18. 378

    Excited states of mono- and biruthenium(II) complexes adsorbed on nanocrystalline titanium dioxide studied by electroabsorption spectroscopy by Daniel Pelczarski, Błażej Gierczyk, Maciej Zalas, Malgorzata Makowska-Janusik, Waldemar Stampor

    Published 2025-02-01
    “…The EA spectra of Ru complexes sensitizing a TiO2 semiconductor were compared with the spectra of these complexes in the form of solid neat films, both of which parametrized within the Liptay theory. …”
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  19. 379

    Passivation of substrates with hydrogen to reduce the number of electron traps in the buffer layer at the contact of silicon with Ba1-xSrxTiO3 by Dmitry A. Belorusov, Evgeniy I. Goldman, Galina V. Chucheva, Mikhail S. Afanasyev, Vladimir A. Pilipenko, Alina V. Semchenko

    Published 2024-12-01
    “…High-frequency C–V curves of the metal–dielectric–semiconductor structures with Ba0.8Sr0.2TiO3 insulating layers deposited on both wafers have been measured. …”
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  20. 380

    THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING by Tien Lam Vu, Hoang Thoan Nguyen, Huu Lam Nguyen, Ngoc Trung Nguyen, Quoc Van Duong, Duc Dung Dang

    Published 2024-09-01
    “…The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. …”
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