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321
Nanostructured ZnO, TiO2, and Composite ZnO/TiO2 Films for Application in Dye-Sensitized Solar Cells
Published 2013-01-01“…The effects of using composite semiconductor films on the efficiency and stability of dye-sensitized solar cells (DSSCs) were investigated. …”
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322
Ferroelectric memory: state-of-the-art manufacturing and research
Published 2020-10-01“…Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. …”
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323
Features of pressure control in pipelines of spacecraft propulsion systems
Published 2019-10-01“…The scheme of the generator sensor based on semiconductor sensing elements with built-in phase-locked loop frequency with the possibility of frequency-digital conversion is proposed. …”
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324
Features of modern circuitry of strain-resistive pressure sensors: fiber-optic pyrometric thermal compensation, optical radiation supply
Published 2021-12-01“…Noise properties of semiconductor and resistive strainresistor are also considered.…”
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325
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Published 2025-01-01“…The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. …”
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326
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A Comparator-Less Buck Converter with Fast Transient Response Using a Reactive Ramp Generator
Published 2025-01-01Get full text
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328
Compact phase shifter using arbitrary length of two coupled transmission lines
Published 2021-08-01Get full text
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329
Hydrogen evolution from water using CdS as photosensitizer
Published 1999-01-01“…Colloidal chemical approaches are increasingly utilised for the preparation and stabilization of semiconductor nanoparticles.…”
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330
Catalytic Activity of a Composition Based on Strontium Bismuthate and Bismuth Carbonate at the Exposure to the Light of the Visible Range
Published 2018-01-01“…The diffuse reflection spectra (DRS) of compositions differ from the analogous spectra of a mechanical mixture of these semiconductor phases with the same composition, which allows one to assume the heterostructural structure of the semiconductor system. …”
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331
Understanding and Optimizing Oxygen Plasma Treatment for Enhanced Cu-Cu Bonding Application
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332
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Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices
Published 2025-02-01“…For neuromorphic applications, 2D layered semiconductor materials have shown a pivotal role due to their distinctive properties. …”
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334
Mechanical Parameters Effects on Acoustic Absorption at Polymer Foam
Published 2015-01-01Get full text
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335
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Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
Published 2024-01-01Get full text
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337
Recent Progress of Graphene-Based Photoelectrode Materials for Dye-Sensitized Solar Cells
Published 2019-01-01“…DSSCs are built from a photoelectrode (a dye-sensitized nanocrystalline semiconductor), an electrolyte with redox couples, and a counterelectrode. …”
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338
Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems
Published 2018-01-01“…Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix. …”
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339
Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study
Published 2025-01-01“…The presented method can be easily extended to any kind of metal/semiconductor or degenerate-semiconductor/semiconductor interface.…”
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340
The Mechanism of Transpassive Dissolution of AISI 321 Stainless Steel in Sulphuric Acid Solution
Published 2011-01-01“…The transpassive film is modeled as a highly doped n-type semiconductor—insulator-p-type semiconductor structure. …”
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