Showing 321 - 340 results of 685 for search '"semiconductors"', query time: 0.04s Refine Results
  1. 321

    Nanostructured ZnO, TiO2, and Composite ZnO/TiO2 Films for Application in Dye-Sensitized Solar Cells by Myrsini Giannouli

    Published 2013-01-01
    “…The effects of using composite semiconductor films on the efficiency and stability of dye-sensitized solar cells (DSSCs) were investigated. …”
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    Article
  2. 322

    Ferroelectric memory: state-of-the-art manufacturing and research by D. A. Abdullaev, R. A. Milovanov, R. L. Volkov, N. I. Borgardt, A. N. Lantsev, K. A. Vorotilov, A. S. Sigov

    Published 2020-10-01
    “…Ferroelectric capacitors and memory cells made by main commercial FRAM manufactures (Texas Instruments, Cypress Semiconductor, Fujitsu и Lapis Semiconductor) are explored. …”
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    Article
  3. 323

    Features of pressure control in pipelines of spacecraft propulsion systems by I. V. Platov, Е. V. Leun, A. I. Сheredov, Yu. N. Mishin

    Published 2019-10-01
    “…The scheme of the generator sensor based on semiconductor sensing elements with built-in phase-locked loop frequency with the possibility of frequency-digital conversion is proposed. …”
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    Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

    Published 2025-01-01
    “…The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. …”
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    Hydrogen evolution from water using CdS as photosensitizer by Tatiana Oncescu, M. Contineanu, Lucia Meahcov

    Published 1999-01-01
    “…Colloidal chemical approaches are increasingly utilised for the preparation and stabilization of semiconductor nanoparticles.…”
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    Article
  10. 330

    Catalytic Activity of a Composition Based on Strontium Bismuthate and Bismuth Carbonate at the Exposure to the Light of the Visible Range by K. S. Makarevich, A. V. Zaitsev, O. I. Kaminsky, E. A. Kirichenko, I. A. Astapov

    Published 2018-01-01
    “…The diffuse reflection spectra (DRS) of compositions differ from the analogous spectra of a mechanical mixture of these semiconductor phases with the same composition, which allows one to assume the heterostructural structure of the semiconductor system. …”
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    Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices by Muhammad Hamza Pervez, Ehsan Elahi, Muhammad Asghar Khan, Muhammad Nasim, Muhammad Asim, Arslan Rehmat, Malik Abdul Rehman, Mohammed A. Assiri, Shania Rehman, Jonghwa Eom, Muhammad Farooq Khan

    Published 2025-02-01
    “…For neuromorphic applications, 2D layered semiconductor materials have shown a pivotal role due to their distinctive properties. …”
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    Article
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    Recent Progress of Graphene-Based Photoelectrode Materials for Dye-Sensitized Solar Cells by Kaustubh Patil, Soheil Rashidi, Hui Wang, Wei Wei

    Published 2019-01-01
    “…DSSCs are built from a photoelectrode (a dye-sensitized nanocrystalline semiconductor), an electrolyte with redox couples, and a counterelectrode. …”
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    Article
  18. 338

    Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems by Egor Yu. Kaniukov, Dzmitry V. Yakimchuk, Victoria D. Bundyukova, Alena E. Shumskaya, Abdulkarim A. Amirov, Sergey E. Demyanov

    Published 2018-01-01
    “…Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix. …”
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    Article
  19. 339

    Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study by Maura Pavesi, Antonella Parisini, Pietro Calvi, Alessio Bosio, Roberto Fornari

    Published 2025-01-01
    “…The presented method can be easily extended to any kind of metal/semiconductor or degenerate-semiconductor/semiconductor interface.…”
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  20. 340

    The Mechanism of Transpassive Dissolution of AISI 321 Stainless Steel in Sulphuric Acid Solution by A. Fattah-Alhosseini, N. Attarzadeh

    Published 2011-01-01
    “…The transpassive film is modeled as a highly doped n-type semiconductor—insulator-p-type semiconductor structure. …”
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