500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Hardware Design for Cascade-Structure, Dual-Stage, Current-Limiting, Solid-State DC Circuit Breaker by Can Ding, Yinbo Ji, Zhao Yuan

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A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions by Mohsen Asoodar, Mehrdad Nahalparvari, Simon Schneider, Iman Shafikhani, Gunnar Ingestrom, Hans-Peter Nee

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Thermal analysis of onboard front-end AC/DC converter for EV using advanced semiconductor devices by Kanimozhi Gunasekaran, Ravi Samikannu

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A Review of Matrix Converters in Motor Drive Applications by Annette von Jouanne, Emmanuel Agamloh, Alex Yokochi

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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

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Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films by Ángela P. Lanchero, Lina F. Prieto, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan, F. Mesa

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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

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A Semiconductor Current-Limiting Device Based on a DC Converter by Evgeniy P. Safonov, Vladimir Ya. Frolov, Anton V. Boeshko, Ruslan S. Dautov

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Devices for express diagnostics of power semiconductor devices and semiconductor converters by E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov

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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

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