Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

“…The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. …”
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Devices for express diagnostics of power semiconductor devices and semiconductor converters by E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov

Subjects: “…semiconductor device…”
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Scientific explanation of e+ and Weyl fermion for injecting semiconductor devices by Arwa Saud Abbas

“…In view of the slow e+ beam-generation development for imaging technology alongside the Weyl fermion which carries charge like an electron, but has no mass, thus moves much faster, injecting semiconductor devices is addressed. The information gained from this prediction has allowed the broadening of its implementation to semiconductor technology with electronic excitation using sources other than e-. …”
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A Detailed Analytical Study of Non-Linear Semiconductor Device Modelling by Umesh Kumar

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Thermal analysis of onboard front-end AC/DC converter for EV using advanced semiconductor devices by Kanimozhi Gunasekaran, Ravi Samikannu

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A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions by Mohsen Asoodar, Mehrdad Nahalparvari, Simon Schneider, Iman Shafikhani, Gunnar Ingestrom, Hans-Peter Nee

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2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

Subjects: “…Ultrawide bandgap semiconductor device…”
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Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films by Ángela P. Lanchero, Lina F. Prieto, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan, F. Mesa

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Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

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A Semiconductor Current-Limiting Device Based on a DC Converter by Evgeniy P. Safonov, Vladimir Ya. Frolov, Anton V. Boeshko, Ruslan S. Dautov

Subjects: “…semiconductor device…”
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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Hardware Design for Cascade-Structure, Dual-Stage, Current-Limiting, Solid-State DC Circuit Breaker by Can Ding, Yinbo Ji, Zhao Yuan

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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

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A Review of Matrix Converters in Motor Drive Applications by Annette von Jouanne, Emmanuel Agamloh, Alex Yokochi

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Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

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From source to sink: the path to efficient energy harvesting with LEDs and displays by Andrea De Iacovo, Gaetano Assanto, Lorenzo Colace

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Editorial Special Section on High-Performance Frequency Synthesizers by Salvatore Levantino, Wanghua Wu

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Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor by Yuri D. Ivanov, Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Irina A. Ivanova, Alexander I. Archakov, Vladimir P. Popov, Alexander V. Latyshev, Konstantin V. Rudenko, Alexander V. Glukhov

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A lightweight multi scale fusion network for IGBT ultrasonic tomography image segmentation by Meng Song, Zhaoba Wang, Youxing Chen, Ya Li, Yong Jin, Bei Jia

“…Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial power semiconductor device, and the integrity of its internal structure directly influences both its electrical performance and long-term reliability. …”
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