Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

“…The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. …”
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Devices for express diagnostics of power semiconductor devices and semiconductor converters by E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov

Subjects: “…semiconductor device…”
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Thermal analysis of onboard front-end AC/DC converter for EV using advanced semiconductor devices by Kanimozhi Gunasekaran, Ravi Samikannu

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Impact of Mn/Co substitution on magnetoelectric and structural properties of ZnO nanostructures thin films by Ángela P. Lanchero, Lina F. Prieto, Heiddy P. Quiroz, Jorge A. Calderón, A. Dussan, F. Mesa

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Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices by J. H. Yum, J. Oh, Todd. W. Hudnall, C. W. Bielawski, G. Bersuker, S. K. Banerjee

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Analytical model and simulation‐based analysis of a work function engineered triple metal tunnel field‐effect transistor device showing excellent device performance by Ria Bose, Jatindra Nath Roy

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500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

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From source to sink: the path to efficient energy harvesting with LEDs and displays by Andrea De Iacovo, Gaetano Assanto, Lorenzo Colace

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Editorial Special Section on High-Performance Frequency Synthesizers by Salvatore Levantino, Wanghua Wu

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Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor by Yuri D. Ivanov, Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Irina A. Ivanova, Alexander I. Archakov, Vladimir P. Popov, Alexander V. Latyshev, Konstantin V. Rudenko, Alexander V. Glukhov

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EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing by Gabriel Garcia-Rojas, Sergio Busquets-Monge, Alber Filba-Martinez, Turev Sarikurt, Salvador Alepuz, Josep Bordonau

“…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure by Ze Nan, Wei Wei, Zhenhua Lin, Ruimei Yuan, Miao Zhang, Jincheng Zhang, Jianyong Ouyang, Jingjing Chang, Hejun Li, Yue Hao

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Ultra‐Broad Emission Copper Halide Scintillator‐Based X‐Ray Imager by Haocheng Lv, Wenyi Shao, Haifeng Chen, Guoyang Zhu, Yao Wang, Zhenzhong Zhang, Hongwei Liang

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A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission by Hualian Tang, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, Wenjie Sun

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SiC MOSFET with Integrated SBD Device Performance Prediction Method Based on Neural Network by Xiping Niu, Ling Sang, Xiaoling Duan, Shijie Gu, Peng Zhao, Tao Zhu, Kaixuan Xu, Yawei He, Zheyang Li, Jincheng Zhang, Rui Jin

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Surface Recombination Via Interface Defects in Field Effect Transistors by E. Bendada, K. Raïs, P. Mialhe, J. P. Charles

“…Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. …”
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Characteristics of electrical properties of nanocrystalline systems of zinc and cadmium selenides by V. V. Danshina

“…It is shown that the calculated values correlate with the experimental ones, which will make it possible to predict the stability of the operation of semiconductor devices.…”
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ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY by V. S. Niss, A. S. Vaskou, A. S. Turtsevich, A. F. Kerentsev, V. K. Kononenko

“…This leads to the need for a detailed thermal analysis of semiconductor devices. The goal of the work is evaluation of thermal parameters of high-power bipolar transistors in plastic packages TO-252 and TO-126 by a method of thermal relaxation differential spectrometry. …”
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Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN by V. S. Feshchenko, K. N. Zyablyuk, E. A. Senokosov, V. I. Chukita, D. A. Kiselev

“…A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc. …”
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