Heterovalent Cation Substitutional and Interstitial Doping in Semiconductor Sensitizers for Quantum Dot Cosensitized Solar Cell by Ningning Zhang, Xiaoping Zou, Yanyan Gao

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New materials — primary converters of semiconductor measuring cells based on InAs-CdTe system by I. A. Kirovskaya, E. N. Kopylova, E. V. Mironova, A. O. Ekkert, R. V. Ekkert, O. V. Kropotin, V. I. Krasheninin, Yu. I. Matyash

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DESIGN PRINCIPLES AND BLOCK SCHEMES OF THE PROBE AUTOMATIC INSPECTION SYSTEMS FOR MICROAND NANOELECTRONICS ON A WAFER by V. A. Minchenko, G. F. Kovalchuk, S. B. Shkolyk

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Nanofiber Composites of Poly(vinyl alcohol)/Silver-Based Molybdate and Tungstate Oxide Semiconductors for Antimicrobial Applications by Vicente de Sousa Marques, Lee Marx Gomes de Carvalho, Débora Aparecida de Almeida, Rian Richard Santos de Farias, Andressa Dalolio Valente, Alessandro Francisco Martins, Celso Nakamura, Edvani Curti Muniz

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Semiconductor Gas Sensors: Metal Oxides, Synthesis Methods, Applications as Gas Sensors, and Oxidation and Reduction Mechanisms by Inam Abed Hammod, Noor Jawad Ridha, Khawla Jemeel Tahir, Firas Kamel Mohamad Alosfur, Asaad Sabbar Yasir, Luma Ahmed Majeed

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Retracted: Performance Analysis and Development of a Semiconductor Junction Rectifier with Multicolor Coding for Indoor Farm Applications by Advances in Materials Science and Engineering

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Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors by Xian‐Hu Zha, Yu‐Xi Wan, Shuang Li, Dao Hua Zhang

“…Abstract Beta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. …”
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Dynamics of Photoinduced Charge Carrier and Photothermal Effect in Pulse-Illuminated Narrow Gap and Moderate Doped Semiconductors by Slobodanka Galovic, Katarina Djordjevic, Milica Dragas, Dejan Milicevic, Edin Suljovrujic

“…When a sample of semiconducting material is illuminated by monochromatic light, in which the photon energy is higher than the energy gap of the semiconductor, part of the absorbed electromagnetic energy is spent on the generation of pairs of quasi-free charge carriers that are bound by Coulomb attraction. …”
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Additive contribution of multiferroic film and semiconductor substrate from nanotube array to resistive switching, topographic features by Shikhgasan Ramazanov, Gaji Gajiev, Daud Selimov, Sadrudin Gadzhimuradov, Sagim Suleymanov, Ştefan Ţălu, Robert S. Matos, Henrique D. da Fonseca Filho

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Preface to the Special Issue on Selected Papers from the Second International Conference on Semiconductor Photochemistry SP-2 by Russell F. Howe, Peter K. J. Robertson, Andrew Mills

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LSTM-based framework for predicting point defect percentage in semiconductor materials using simulated XRD patterns by Mehran Motamedi, Reza Shidpour, Mehdi Ezoji

“…Abstract In this paper, we present a machine learning-based approach that leverages Long Short-Term Memory (LSTM) networks combined with a sliding window technique for feature extraction, aimed at accurately predicting point defect percentages in semiconductor materials based on simulated X-ray Diffraction (XRD) data. …”
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Thermal analysis of onboard front-end AC/DC converter for EV using advanced semiconductor devices by Kanimozhi Gunasekaran, Ravi Samikannu

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Si1−xGex nanowire based metal‐semiconductor‐metal Schottky biristor: Design and sensitivity analysis by Shaleen Nr, Sangeeta Singh, Pankaj Kumar

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Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH4)2S Treated III-V Semiconductors by Ming-Kwei Lee, Chih-Feng Yen

“…The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs) by metal-organic chemical vapor deposition were studied. …”
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A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor by Megersa Wodajo Shura

“…In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. …”
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Elasto-Thermodiffusion Modeling Using Optoelectronic Microtemperature Processes for a Ramp-Type Heating Nano-Semiconductor Material by M. Adel, Khaled Lotfy, Alaa El-Bary, M. Ahmed

“…The proposed model is put to use in analyzing how ramp-type heating affects an unbounded semiconductor material plane at rest. The discussion section presents a series of graphs to analyze the effect of the main parameters.…”
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A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions by Mohsen Asoodar, Mehrdad Nahalparvari, Simon Schneider, Iman Shafikhani, Gunnar Ingestrom, Hans-Peter Nee

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Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials by Chi Chen, Hao Wang, Houzhao Wan, Dan Sun

“…However, few 2D UWBG semiconductors have been discovered, impeding their prosperous developments and widespread applications. …”
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Advancements in NIR sensing for tuberculosis detection using dilute III-V semiconductors: current status and future prospects by Melaku Dereje Mamo, Yaschelewal Zigyalew, Seid Emamu Gelan, Bulelwa Ntsendwana, Lucky Sikhwivhilu

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Discovery of a Robust P‐Type Ultrawide Bandgap Oxide Semiconductor: LiGa5O8 by Kaitian Zhang, Vijay Gopal Thirupakuzi Vangipuram, Hsien‐Lien Huang, Jinwoo Hwang, Hongping Zhao

Subjects: “…ultrawide bandgap semiconductors…”
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