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741
Spectroscopic and Morphological Studies of Metal-Organic and Metal-Free Dyes onto Titania Films for Dye-Sensitized Solar Cells
Published 2013-01-01“…We have investigated the spectroscopic behavior of three different sensitizers adsorbed onto titania thin films in order to gain information both on the electron transfer process from dye to titania and on the anchorage of the chromophore onto the semiconductor. We have examined by UV-Vis and fluorescence spectroscopy the widely used ruthenium complex cis-di(thiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)ruthenium(II) (N719), the more recently developed organic molecular 3-(5-(4-(diphenylamino)styryl)thiophen-2-yl)-2-cyanoacrylic acid (D5), and a push-pull zinc phthalocyanine sensitizer (ZnPc). …”
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742
Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes
Published 2025-01-01“…NiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. …”
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743
Boron phosphide microwires based on-chip electrocatalytic oxygen evolution microdevice
Published 2025-02-01“…Electrical property and band structure analysis revealed BP as a one-dimensional p-type semiconductor with a wide band gap. We constructed an on-chip electrocatalytic microdevice using individual BP microwires to evaluate OER performance. …”
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744
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745
EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing
Published 2025-01-01“…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
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746
Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors
Published 2025-01-01“…In this work, structures are introduced that employ high‐permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. …”
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747
Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
Published 2025-01-01“…The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. …”
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748
g-C<sub>3</sub>N<sub>4</sub> Modified with Metal Sulfides for Visible-Light-Driven Photocatalytic Degradation of Organic Pollutants
Published 2025-01-01“…Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) proved to be a promising semiconductor for the photocatalytic degradation of various organic pollutants. …”
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749
Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering
Published 2025-03-01“…A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. …”
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750
Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer
Published 2025-01-01“…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25–23.94 GHz and 24.06–28.31 GHz (bandgap 0.12 GHz), 19.69–23.06 GHz and 23.625–27 GHz (bandgap 0.56 GHz), and 8–11.5 GHz and 12.75–17 GHz (bandgap 1.25 GHz). …”
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751
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Published 2024-12-01“…Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. …”
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752
Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes
Published 2025-01-01“…Specifically, by tailoring the GaN nanowires via a simple alkaline-etching step to expose the inner (10 $$\bar{1}\bar{1}$$ 1 ¯ 1 ¯ ) facets, we achieve a highly coupled semiconductor nanowire-cocatalyst heterointerface with strong electron interaction. …”
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753
High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel
Published 2025-01-01“…Abstract The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. …”
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754
Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot
Published 2025-01-01“…Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-semiconductor (Si-MOS) quantum dot and provide experimental evidence for the control of SSOC. …”
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755
A Single-Mode 852-nm Faraday Laser
Published 2024-01-01“…Realizing always atomic translation frequency output, single-mode, high frequency stability, narrow linewidth semiconductor lasers, is one of the ultimate visions of areas related to quantums, such as quantum precision measurement and atomic physics. …”
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756
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757
Silicon-based all-solid-state batteries operating free from external pressure
Published 2025-01-01Get full text
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758
Three-dimensional direct lithography of stable quantum dots in hybrid glass
Published 2025-01-01“…Semiconductor quantum dots (QDs), as high-performance materials, play an essential role in contemporary industry, mainly due to their high photoluminescent quantum yield, wide absorption characteristics, and size-dependent light emission. …”
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759
Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth
Published 2025-03-01“…Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. …”
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760
Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing
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