Showing 741 - 760 results of 896 for search '"semiconductor"', query time: 0.05s Refine Results
  1. 741

    Spectroscopic and Morphological Studies of Metal-Organic and Metal-Free Dyes onto Titania Films for Dye-Sensitized Solar Cells by Gabriella Di Carlo, Daniela Caschera, Roberta G. Toro, Cristina Riccucci, Gabriel M. Ingo, Giuseppina Padeletti, Luisa De Marco, Giuseppe Gigli, Giovanna Pennesi, Gloria Zanotti, Anna M. Paoletti, Nicola Angelini

    Published 2013-01-01
    “…We have investigated the spectroscopic behavior of three different sensitizers adsorbed onto titania thin films in order to gain information both on the electron transfer process from dye to titania and on the anchorage of the chromophore onto the semiconductor. We have examined by UV-Vis and fluorescence spectroscopy the widely used ruthenium complex cis-di(thiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)ruthenium(II) (N719), the more recently developed organic molecular 3-(5-(4-(diphenylamino)styryl)thiophen-2-yl)-2-cyanoacrylic acid (D5), and a push-pull zinc phthalocyanine sensitizer (ZnPc). …”
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  2. 742
  3. 743

    Boron phosphide microwires based on-chip electrocatalytic oxygen evolution microdevice by Hongwei Su, Qing Guo, Hongtao Li, Alei Li, Yunlei Zhong, Xu Zhang, Lin Geng, Shuai Liu, Liuqi Dong, Xiaohang Pan, Lin Wang, Lixing Kang

    Published 2025-02-01
    “…Electrical property and band structure analysis revealed BP as a one-dimensional p-type semiconductor with a wide band gap. We constructed an on-chip electrocatalytic microdevice using individual BP microwires to evaluate OER performance. …”
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    Article
  4. 744
  5. 745

    EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing by Gabriel Garcia-Rojas, Sergio Busquets-Monge, Alber Filba-Martinez, Turev Sarikurt, Salvador Alepuz, Josep Bordonau

    Published 2025-01-01
    “…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
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    Article
  6. 746

    Enhanced UV–Vis Rejection Ratio in Metal/BaTiO3/β‐Ga2O3 Solar‐Blind Photodetectors by Nathan Wriedt, Lingyu Meng, Dong Su Yu, Chris Chae, Kyle Liddy, Ashok Dheenan, Sushovan Dhara, Roberto C. Myers, Oleg Maksimov, Richard Blakeley, Sanjay Krishna, Jinwoo Hwang, Hongping Zhao, Joe McGlone, Siddharth Rajan

    Published 2025-01-01
    “…In this work, structures are introduced that employ high‐permittivity dielectric/semiconductor heterojunctions to enhance the performance of a Schottky photodetector. …”
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    Article
  7. 747

    Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste by Shengqian Zhang, Yongsheng Ren, Xingwei Yang, Wenhui Ma, Hui Chen, Guoqiang Lv, Yun Lei, Yi Zeng, Zhengxing Wang, Bingxi Yu

    Published 2025-01-01
    “…The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. …”
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    Article
  8. 748

    g-C<sub>3</sub>N<sub>4</sub> Modified with Metal Sulfides for Visible-Light-Driven Photocatalytic Degradation of Organic Pollutants by Shoaib Mukhtar, Erzsébet Szabó-Bárdos, Csilla Őze, Tatjána Juzsakova, Kornél Rácz, Miklós Németh, Ottó Horváth

    Published 2025-01-01
    “…Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) proved to be a promising semiconductor for the photocatalytic degradation of various organic pollutants. …”
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    Article
  9. 749

    Enhanced energy storage performance in Ag(Nb,Ta)O3 films via interface engineering by Xiao Zhai, Jun Ouyang, Weijie Kuai, Yinxiu Xue, Kun Wang, Nengneng Luo, Hongbo Cheng, Hanfei Zhu, Chao Liu, Limei Zheng

    Published 2025-03-01
    “…A Ag(Nb,Ta)O3/BaTiO3 bilayer film is proposed, where the BaTiO3 layer acts as a p-type semiconductor while Ag(Nb,Ta)O3 layer is n-type, together with the n-type LaNiO3 buffer layer on the substrate, forming an n-p-n heterostructure. …”
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  10. 750

    Target Detection Using Fused Unidentical Photonics-Based LFM Sub-Band Radar Signals With an Adaptive Feed Forward Network Equalizer by Bikash Nakarmi, S. M. Rezwanul Islam, Hum Nath Parajuli, Ikechi Augustine Ukaegbu, Aigerim Ashimbayeva, Carlo Molardi, T. D. Subash, Xiangchuan Wang, Shilong Pan

    Published 2025-01-01
    “…We demonstrate this using optical injection in a semiconductor laser to generate Ph-LFM signals at different IEEE X-KA radar sub-bands: 19.25&#x2013;23.94 GHz and 24.06&#x2013;28.31 GHz (bandgap 0.12 GHz), 19.69&#x2013;23.06 GHz and 23.625&#x2013;27 GHz (bandgap 0.56 GHz), and 8&#x2013;11.5 GHz and 12.75&#x2013;17 GHz (bandgap 1.25 GHz). …”
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  11. 751

    Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 by Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi, Zhiheng Huang, Mengze Zhao, Yalin Peng, Zitao Chen, Zitian Pan, Jundong Zhu, Chenyang Cui, Rong Yang, Wei Yang, Sheng Meng, Dongxia Shi, Xuedong Bai, Can Liu, Na Li, Jianshi Tang, Kaihui Liu, Luojun Du, Guangyu Zhang

    Published 2024-12-01
    “…Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS2. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. …”
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  12. 752

    Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes by Wei Chen, Danhao Wang, Weiyi Wang, Xin Liu, Yuying Liu, Chao Wang, Yang Kang, Shi Fang, Xudong Yang, Wengang Gu, Dongyang Luo, Yuanmin Luo, Zongtao Qu, Chengjie Zuo, Yi Kang, Lin Cheng, Wensheng Yan, Wei Hu, Ran Long, Jr-Hau He, Kang Liang, Sheng Liu, Yujie Xiong, Haiding Sun

    Published 2025-01-01
    “…Specifically, by tailoring the GaN nanowires via a simple alkaline-etching step to expose the inner (10 $$\bar{1}\bar{1}$$ 1 ¯ 1 ¯ ) facets, we achieve a highly coupled semiconductor nanowire-cocatalyst heterointerface with strong electron interaction. …”
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    Article
  13. 753

    High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel by Jianfeng Wu, Jialin Zhang, Ruiqi Jiang, Hao Wu, Shouheng Chen, Xinlei Zhang, Wenhui Wang, Yuanfang Yu, Qiang Fu, Rui Lin, Yueying Cui, Tao Zhou, Zhenliang Hu, Dongyang Wan, Xiaolong Chen, Weida Hu, Hongwei Liu, Junpeng Lu, Zhenhua Ni

    Published 2025-01-01
    “…Abstract The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications, but has thus far remained an outstanding challenge using conventional materials. …”
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    Article
  14. 754

    Single-qubit anisotropy induced by micromagnet in Si-MOS quantum dot by Ning Chu, Xin Zhang, Rong-Long Ma, Zhen-Zhen Kong, Wei-Zhu Liao, Sheng-Kai Zhu, Chu Wang, Ao-Ran Li, Gui-Lei Wang, Gang Cao, Hai-Ou Li, Guo-Ping Guo

    Published 2025-01-01
    “…Here, we investigate the anisotropic properties of single spin qubit in silicon metal-oxide-semiconductor (Si-MOS) quantum dot and provide experimental evidence for the control of SSOC. …”
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    Article
  15. 755

    A Single-Mode 852-nm Faraday Laser by Zhiyang Wang, Zijie Liu, Jianxiang Miao, Hangbo Shi, Xiaomin Qin, Xiaolei Guan, Jia Zhang, Pengyuan Chang, Tiantian Shi, Jingbiao Chen

    Published 2024-01-01
    “…Realizing always atomic translation frequency output, single-mode, high frequency stability, narrow linewidth semiconductor lasers, is one of the ultimate visions of areas related to quantums, such as quantum precision measurement and atomic physics. …”
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  16. 756
  17. 757
  18. 758

    Three-dimensional direct lithography of stable quantum dots in hybrid glass by Dezhi Zhu, Shangben Jiang, Ying Wang, Dejun Liu, Weijia Bao, Liwei Liu, Junle Qu, Yiping Wang, Changrui Liao

    Published 2025-01-01
    “…Semiconductor quantum dots (QDs), as high-performance materials, play an essential role in contemporary industry, mainly due to their high photoluminescent quantum yield, wide absorption characteristics, and size-dependent light emission. …”
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  19. 759

    Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth by Ruishan Li, Mengyu Hong, Wei Shangguan, Yanzhe Zhang, Yihe Liu, He Jiang, Huihui Yu, Li Gao, Xiankun Zhang, Zheng Zhang, Yue Zhang

    Published 2025-03-01
    “…Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. …”
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    Article
  20. 760