Showing 721 - 740 results of 896 for search '"semiconductor"', query time: 0.05s Refine Results
  1. 721

    Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures by Dipanjan Sen, Harikrishnan Ravichandran, Mayukh Das, Pranavram Venkatram, Sooho Choo, Shivasheesh Varshney, Zhiyu Zhang, Yongwen Sun, Jay Shah, Shiva Subbulakshmi Radhakrishnan, Akash Saha, Sankalpa Hazra, Chen Chen, Joan M. Redwing, K. Andre Mkhoyan, Venkatraman Gopalan, Yang Yang, Bharat Jalan, Saptarshi Das

    Published 2024-12-01
    “…Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO3/2D-MoS2 device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.…”
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  2. 722

    Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates by Pieter Cardinael, Sachin Yadav, Bertrand Parvais, Jean-Pierre Raskin

    Published 2024-01-01
    “…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
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  3. 723
  4. 724

    Accelerated TLPD bonding of reliable IMCs micro joints using Cu–8Ni substrate under thermal gradient: Experiments and theoretical calculations by Yanqing Lai, Mingjie Wang, Donghui Zheng, Meiping Liu, Bao Chen, Jinmei Lv, Ning Zhao

    Published 2025-03-01
    “…With the rapid development of the third-generation semiconductor power device towards high density, high performance, miniaturization and high temperature resistance, it is now urgent to develop a transient liquid phase diffusion (TLPD) bonding method with short bonding time and high reliability. …”
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  5. 725

    Development of a novel strategy for the quantification of ultra-trace impurity elements in high-purity magnesium using inductively coupled plasma tandem mass spectrometry by Liang Fu, Guangsheng Huang, Yaobo Hu, Xianhua Chen, Jingfeng Wang, Fusheng Pan

    Published 2025-01-01
    “…High purity magnesium is not only an important basic raw material for semiconductor and electronics industries, but also a promising new generation of electrochemical energy storage materials and biomedical materials. …”
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    Article
  6. 726
  7. 727

    Zwitterion Effect of Cow Brain Protein towards Efficiency Improvement of Dye-Sensitized Solar Cell (DSSC) by Denny Widhiyanuriyawan, Prihanto Trihutomo, Sudjito Soeparman, Lilis Yuliati

    Published 2020-01-01
    “…Dye-Sensitized Solar Cell (DSSC) constitutes a solar cell using natural dyes from plants that are adsorbed in semiconductors to convert solar energy into electrical energy. …”
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  8. 728

    Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices by Caterina Sbandati, Xiongfei Jiang, Deepika Yadav, Spyros Stathopoulos, Dana Cohen, Alex Serb, Shiwei Wang, Themis Prodromakis

    Published 2024-12-01
    “…Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal‐oxide‐semiconductor (CMOS) front‐ends. This eMUA‐MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.…”
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    Article
  9. 729

    Field measurement of atmospheric CO₂ column abundance based on portable laser heterodyne radiometer by Yong Wang, Yong Wang, Maolei Zhang, Maolei Zhang, Jiapeng Wang, Jiapeng Wang, Gang Wang, Gang Wang, Ruyue Cui, Ruyue Cui, Lei Dong, Lei Dong, Hongpeng Wu, Hongpeng Wu

    Published 2025-02-01
    “…The instrument modulates the solar radiation using a fiber optic switch and amplifies the solar radiation through a semiconductor optical amplifier. The local oscillator laser is progressively scanned at the strong absorption characteristic of 1572.02 nm. …”
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  10. 730

    Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR &amp; communicati... by Gauri Deshpande, J. Ajayan, Sandip Bhattacharya, B. Mounika, Amit Krishna Dwivedi, D. Nirmal

    Published 2025-03-01
    “…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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  11. 731

    Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach by Daniel, Jonathan, Dal Pra, Ophélie, Kurek, Eleonore, Grazon, Chloé, Blanchard-Desce, Mireille

    Published 2024-04-01
    “…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
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  12. 732

    Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli by Jieun Kim, Jung Wook Lim, Chohyeon Park, Chaerin Yu, Jaehee Lee

    Published 2025-03-01
    “…The device is fabricated using a standard complementary metal-oxide-semiconductor process and is composed of a TiO2 channel deposited over a dual dielectric of SiOx on Al2O3. …”
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  13. 733

    Preparation of AgBiS2 thin films with vapor-assisted solution method for flexible near-infrared photodetectors by Zhirong Liu, Xiongjie Li, Xiaoting Ma, Haixuan Yu, Wanpeng Yang, Ronghua Luo, Yuping Liu, Yan Shen, Mingkui Wang

    Published 2025-04-01
    “…Using a simple metal/semiconductor/metal device as a demonstration, the as-prepared AgBiS2-based flexible NIR photodetectors (NPDs) exhibit a high linear dynamic range of 103.6 dB. …”
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  14. 734

    Electronically Coupled Heterojunctions Based on Graphene and Cu2−xS Nanocrystals: The Effect of the Surface Ligand by Ju Y. Shang, Mariangela Giancaspro, Adriana Grandolfo, Rafique A. Lakho, Elisabetta Fanizza, Suraj K. Patel, Giuseppe Valerio Bianco, Marinella Striccoli, Chiara Ingrosso, Oscar Vazquez-Mena, M. Lucia Curri

    Published 2024-12-01
    “…While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu<sub>2−x</sub>S. …”
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  15. 735

    Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

    Published 2025-02-01
    “…This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.…”
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  16. 736
  17. 737

    Self-assembled biodegradable herbal-based nanoflower decorative magnesium implants combine therapy with bone regeneration by Huihui Du, Dongdong Zhang, Kui Xue, Limin Ma, Ru Xu, Ji Tan, Feng Peng, Xuanyong Liu

    Published 2025-01-01
    “…Moreover, Cur-Fe coating exhibits remarkable narrow gap semiconductor characteristics, which can generate reactive oxygen species (ROS) and demonstrated excellent antibacterial effect under simulated sunlight (SSL) irradiation. …”
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  18. 738

    Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires by Jinjie Zhu, Qing Cai, Pengfei Shao, Shengjie Zhang, Haifan You, Hui Guo, Jin Wang, Junjun Xue, Bin Liu, Hai Lu, Youdou Zheng, Rong Zhang, Dunjun Chen

    Published 2025-01-01
    “…The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. …”
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    Article
  19. 739
  20. 740

    Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate by Zizheng Li, Naresh Sharma, Bruno Lopez-Rodriguez, Roald van der Kolk, Thomas Scholte, Hugo Voncken, Jasper van der Boom, Simon Gröblacher, Iman Esmaeil Zadeh

    Published 2025-01-01
    “…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
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    Article