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721
Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures
Published 2024-12-01“…Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO3/2D-MoS2 device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.…”
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722
Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates
Published 2024-01-01“…With the help of a simplified TCAD model of the GaN-on-Si stack, we link this behavior to slow charge redistribution in the C-doped buffer continuously modifying the flat-band voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {FB}}$ </tex-math></inline-formula>) of the Metal-Insulator-Semiconductor (MIS) structure. Free carrier transport across the buffer is shown to have the greatest contribution on the large time constants, highlighting the importance of vertical transport paths in GaN-on-Si stacks.…”
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723
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724
Accelerated TLPD bonding of reliable IMCs micro joints using Cu–8Ni substrate under thermal gradient: Experiments and theoretical calculations
Published 2025-03-01“…With the rapid development of the third-generation semiconductor power device towards high density, high performance, miniaturization and high temperature resistance, it is now urgent to develop a transient liquid phase diffusion (TLPD) bonding method with short bonding time and high reliability. …”
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725
Development of a novel strategy for the quantification of ultra-trace impurity elements in high-purity magnesium using inductively coupled plasma tandem mass spectrometry
Published 2025-01-01“…High purity magnesium is not only an important basic raw material for semiconductor and electronics industries, but also a promising new generation of electrochemical energy storage materials and biomedical materials. …”
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726
Grain engineering for efficient near-infrared perovskite light-emitting diodes
Published 2024-12-01“…However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. …”
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727
Zwitterion Effect of Cow Brain Protein towards Efficiency Improvement of Dye-Sensitized Solar Cell (DSSC)
Published 2020-01-01“…Dye-Sensitized Solar Cell (DSSC) constitutes a solar cell using natural dyes from plants that are adsorbed in semiconductors to convert solar energy into electrical energy. …”
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728
Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices
Published 2024-12-01“…Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal‐oxide‐semiconductor (CMOS) front‐ends. This eMUA‐MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.…”
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729
Field measurement of atmospheric CO₂ column abundance based on portable laser heterodyne radiometer
Published 2025-02-01“…The instrument modulates the solar radiation using a fiber optic switch and amplifies the solar radiation through a semiconductor optical amplifier. The local oscillator laser is progressively scanned at the strong absorption characteristic of 1572.02 nm. …”
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730
Impact of gate metals/high-K materials and lateral scaling on the performance of AlN/GaN/AlGaN-MOSHEMT on SiC wafer for future microwave power amplifiers in RADAR & communicati...
Published 2025-03-01“…An innovative GaN-channel MOSHEMT (Metal-oxide-semiconductor-high-electron-mobility-transistor) featuring AlGaN aback barrier and AlN barrier is reported. …”
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731
Dye-based fluorescent organic nanoparticles made from polar and polarizable chromophores for bioimaging purposes: a bottom-up approach
Published 2024-04-01“…Among them luminescent metal-, semiconductor- or oxide-based “hard” nanoparticles have been the most widely used. …”
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732
Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli
Published 2025-03-01“…The device is fabricated using a standard complementary metal-oxide-semiconductor process and is composed of a TiO2 channel deposited over a dual dielectric of SiOx on Al2O3. …”
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733
Preparation of AgBiS2 thin films with vapor-assisted solution method for flexible near-infrared photodetectors
Published 2025-04-01“…Using a simple metal/semiconductor/metal device as a demonstration, the as-prepared AgBiS2-based flexible NIR photodetectors (NPDs) exhibit a high linear dynamic range of 103.6 dB. …”
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734
Electronically Coupled Heterojunctions Based on Graphene and Cu2−xS Nanocrystals: The Effect of the Surface Ligand
Published 2024-12-01“…While most research has concentrated on systems using heavy metal-based semiconductor NCs, there is a need for further exploration of environmentally friendly nanomaterials, such as Cu<sub>2−x</sub>S. …”
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735
Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers
Published 2025-02-01“…This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.…”
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736
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737
Self-assembled biodegradable herbal-based nanoflower decorative magnesium implants combine therapy with bone regeneration
Published 2025-01-01“…Moreover, Cur-Fe coating exhibits remarkable narrow gap semiconductor characteristics, which can generate reactive oxygen species (ROS) and demonstrated excellent antibacterial effect under simulated sunlight (SSL) irradiation. …”
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738
Observation of ultraviolet photothermoelectric bipolar impulse in gallium-based heterostructure nanowires
Published 2025-01-01“…The device achieves exceptional responsivity (17.1 mA/W) and remarkably fast speed (8.8 ms) at 0 V, surpassing existing semiconductor electrochemical cells. This bipolar ultraviolet impulse detection mode harnesses light-induced heat for electricity generation, enabling innovative bidirectional encryption communication capabilities. …”
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739
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740
Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate
Published 2025-01-01“…Despite numerous demonstrations of high-performance LN photonics, processing lithium niobate remains challenging and suffers from incompatibilities with standard complementary metal–oxide–semiconductor (CMOS) fabrication lines, limiting its scalability. …”
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