Unveiling the Electrocatalytic Performances of the Pd-MoS₂ Catalyst for Methanol-Mediated Overall Water Splitting by Aviraj M. Teli, Sagar M. Mane, Rajneesh Kumar Mishra, Wookhee Jeon, Jae Cheol Shin

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High-speed FSO-5G wireless communication system with enhanced loss compensation using high-power EDFA by Stotaw Talbachew Hayle, Hua-Yi Hsu, Chia-Peng Wang, Hai-Han Lu, Jia-Ming Lu, Wei-Wen Hsu, Yu-Chen Chung, Yu-Yao Bai, Kelper Okram

“…Fibre Bragg grating sensors are employed as wavelength selectors for both downlink and uplink, offering a simpler, cost-effective solution compared to previously utilized reflective semiconductor optical amplifiers and multiple laser sources. …”
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Preparation of Molecularly Imprinted Electrochemical Sensors and Analysis of the Doping of Epinephrine in Equine Blood by Zhao Wang, Yanqi Li, Xiaoxue Xi, Qichao Zou, Yuexing Zhang

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A Comparative Analysis of Laser-Ablated Surface Characteristics Between the Si Face and C Face of Silicon Carbide Substrates by Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, J. Andrew Yeh, Yi Yang, Chien-Fang Ding

“…Silicon carbide (SiC) has significant potential as a third-generation semiconductor material due to its exceptional thermal and electronic properties, yet its high hardness and brittleness make processing costly and complex. …”
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All-Optically Controlled Memristive Device Based on Cu2O/TiO2 Heterostructure Toward Neuromorphic Visual System by Jun Xie, Xuanyu Shan, Ningbo Zou, Ya Lin, Zhongqiang Wang, Ye Tao, Xiaoning Zhao, Haiyang Xu, Yichun Liu

“…In particular, memristive materials with all-optical modulation and complementary metal oxide semiconductor (CMOS) compatibility are highly desired for energy-efficient image perception. …”
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Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications by Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim

“…Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel surface, critically impacting on the channel carrier behaviors in metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric field-effect-transistor (FEFET). …”
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Alteration of Mastication Force via Intraoral Closed-Loop Electrical Stimulation by Junxiang Zheng, Bing Jiang, Saurabh Biswas, Su Young Lee, Erin Ealba Bumann, Teresa E. Lever, Jeonghee Kim, Hangue Park

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors by Soroush Ghandiparsi, Bikram Chatterjee, Jimmy‐Xuan Shen, Miranda S. Gottlieb, Clint D. Frye, Joseph D. Schneider, Ryan D. Muir, Brandon W. Buckley, Sara E. Harrison, Qinghui Shao, Joel B. Varley, Lars F. Voss

“…Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). …”
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Short-Circuit Performance Analysis of Commercial 1.7 kV SiC MOSFETs Under Varying Electrical Stress by Shahid Makhdoom, Na Ren, Ce Wang, Yiding Wu, Hongyi Xu, Jiakun Wang, Kuang Sheng

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Modern challenges facing electric vehicle adoption: a review of barriers to adoption, supply chain challenges, and equity by Hala Alshahapy, Joe F Bozeman III, Sanya Carley, Destenie Nock, Daniel Matisoff

“…Key disruptors include critical mineral scarcity, semiconductor shortages, and international trade and COVID-19-related restrictions, complicating efforts to overcome adoption hurdles. …”
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Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics by Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley

“…Additionally, polarization-induced free charges at the metal–semiconductor interface reduced band bending, thereby enhancing carrier transport. …”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

“…In this paper, special optimizations to source/drain (S/D) doping engineering including spacer bottom footing (SBF) and refining the lightly doped drain (LDD) implantation process are explored to enhance both fabricated complementary metal oxide semiconductor (CMOS) NSFETs and their 6T-SRAM cells. …”
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Monodispersed Iron Selenide Nanoparticles United with Carbon Nanotubes for Highly Reversible Zinc–Air Batteries by Hua Zhang, Tong Zeng, Jiale Ma, Yue Jiang, Yang Huang, Yuxin Cheng, Haifeng Ye, Cuiyun Zeng, Chenghui Zeng, Minshen Zhu, Shuiliang Chen

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Surface crystal-orientation-dependent second-order nonlinear optical properties of cubic boron arsenide (c-BAs) by Lipeng Zhu, Yachao Ma, Chuyi Zhou, Tanwen Lai, Aochi Jia, Yipeng Zheng, Kaili Ren, Dongdong Han, Jun Dong, Ze Xue, Yani Ren, Qiyi Zhao, Chuan He, Jiming Zheng

“…The energy band structure demonstrates that c-BAs is an indirect bandgap semiconductor. The isotropic complex dielectric functions and the derived linear optical parameters have been obtained, such as complex refractive index and reflectivity. …”
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Impedance mapping with high-density microelectrode array chips reveals dynamic heterogeneity of in vitro epithelial barriers by Alessandra Venz, Bastien Duckert, Liesbet Lagae, Saeedeh Ebrahimi Takalloo, Dries Braeken

“…Integrated with Complementary Metal Oxide Semiconductor (CMOS) technology for multiplexing and rapid impedance measurements, HD-MEAs can enable high spatiotemporal resolution assessments of epithelial tissues. …”
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Near Junction Integration of Vapor Chamber for Transient Thermal Performance Improvements of SiC Power Module by Wei Mu, Laili Wang, Haoyuan Jin, Borong Hu, Binyu Wang, Jinfeng Zhang, Liang Wang, Teng Long

“…Power semiconductor modules are mostly stressed when faced with large junction temperature variations, leading to failures such as bond wire lift-off and solder fatigue. …”
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The study of five-level inverters with various PWM by O. A. Lysenko, A. A. Okhotnikov, V. A. Zakharenko, V. Yu. Kobenko

“…The relevance of the research is indicated by the increasing demands of technological processes for the economic use of electric energy, the reduction in power consumed by semiconductor converters, and also to the level of regulated reactive power. …”
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Polyoxovanadate-modified SnO2 electron transport layer for perovskite photodetectors by Ziting Liu, Yijia Hao, Jing Zhang, Yi He, Weilin Chen

“…Polyoxovanadates (POVs), as semiconductor-like molecules, exhibit good redox and excellent optical properties, which can regulate the energy band structure of SnO2. …”
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Smart Driving Hardware Augmentation by Flexible Piezoresistive Sensor Matrices with Grafted‐on Anticreep Composites by Kaifeng Chen, Hua Yang, Ang Wang, Linsen Tang, Xin Zha, Ndeutala Selma Iita, Hong Zhang, Zhuoxuan Li, Xinyu Wang, Wei Yang, Shaoxing Qu, Zongrong Wang

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Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode by Haris Naeem Abbasi, Moheb Sheikhi, Donghyeok Kim, Ranveer Singh, Jiarui Gong, Jie Zhou, Qiming Zhang, Shuoyang Qiu, Carolina Adamo, Patrick Marshall, Clincy Cheung, Vincent Gambin, Zhenqiang Ma

“…Abstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. …”
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