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681
Vacuum electrospray deposition for face-on orientation and interface preservation in organic photovoltaics
Published 2025-01-01“…These results highlight the potential of VESD as a versatile technique for controlling molecular orientation in solution-processable organic semiconductors, enabling the development of highly efficient devices with fewer charge traps without relying on synthetic or epitaxial methods.…”
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682
An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers
Published 2023-01-01“…A precise power loss model of the semiconductor switches has been devised from the manufacturer’s datasheet to achieve a perfect thermal design for the converter. …”
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683
The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
Published 2024-12-01Get full text
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684
Development of a Bipolar Radio-frequency Power Supply for Structures of Lossless Ion Manipulations
Published 2025-01-01“…In addition, the output stage used a half-bridge circuit with GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) as the core devices. …”
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685
Insights on nitrogen/oxygen dual defects synergistic modulated charge transfer across the g-C3N4/TiO2-NTAs heterojunction enhanced photodegradation and gas-sensing performances
Published 2025-01-01“…The PEC activity of these nanohybrids is notably superior to that of their semiconductor counterparts, primarily due to the synergistic coupling of strong heterojunction interfaces and abundant surface defects. …”
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686
Lead Telluride Doped with Au as a Very Promising Material for Thermoelectric Applications
Published 2015-01-01“…Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material.…”
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687
Characterization of New Particle Formation in Soft X-ray Radiolysis Reactor: AMCs-to-Secondary Inorganic Aerosols
Published 2023-02-01“…Abstract Airborne molecular contaminants (AMCs) in cleanrooms should be monitored and controlled tightly to reduce yield loss since they can be converted into nanoparticles or surface haze contamination on semiconductor chips or masks. Soft X-ray radiolysis was developed to detect AMCs as low as the ppt-level by forming secondary aerosols from AMCs under soft X-ray irradiation. …”
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688
Photocatalytic Degradation of E.Coli Bacteria by Graphitic Carbon Nitride Photocatalysts under Visible Light Irradiation
Published 2024-08-01“…Graphitic carbon nitride, as a polymeric semiconductor, has attracted significant attention in this field. …”
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689
Fabrication of Cu: ZnO thin film sensor for ethanol vapor detection
Published 2025-01-01“… For a long time, metal oxide semiconductor (MOS) based gas sensors have been widely used in domestic, commercial, and industrial sectors to detect harmful gases. …”
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690
Controlled Fabrication of Native Ultra‐Thin Amorphous Gallium Oxide From 2D Gallium Sulfide for Emerging Electronic Applications
Published 2025-01-01“…Gallium (II) sulfide (β‐GaS), a hexagonal phase group III monochalcogenide, is a wide bandgap semiconductor with a bandgap exceeding 3 eV in single and few‐layer form. …”
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691
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks
Published 2024-01-01“…Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. …”
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692
Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb2S3 heterojunction
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693
Electrodeposited CdTe solar cells using low-purity Cd precursors & the effect of chemical purity
Published 2024-05-01“…Glass/fluorine-doped tin oxide (FTO) substrates have been used to electrodeposit the semiconductor layers. The as-deposited (AD) layers were heat-treated in the air with CdCl2. …”
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694
Tracking Water Splitting Activity by Cocatalyst Identity in SrTiO3
Published 2025-01-01“…By tracking the band energetics of photocatalyst electrodes using operando electrochemical attenuated total reflectance surface‐enhanced infrared absorption spectroscopy, cocatalysts (especially Rh) are found to shift the quasi‐Fermi levels and metal‐semiconductor flat‐band potentials of photocatalysts in an anodic direction. …”
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695
Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy
Published 2025-01-01Get full text
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696
An impermeable copper surface monolayer with high-temperature oxidation resistance
Published 2025-02-01Get full text
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697
Fabrication of Cu: ZnO thin film sensor for ethanol vapor detection
Published 2025-01-01“… For a long time, metal oxide semiconductor (MOS) based gas sensors have been widely used in domestic, commercial, and industrial sectors to detect harmful gases. …”
Get full text
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698
Novel Insights into Surface Energies and Enhanced Gas-Sensing Capabilities of ZnGa<sub>2</sub>O<sub>4</sub>(111) via Ab Initio Studies
Published 2025-01-01“…This study unveils the previously unexplored roles of Ga-Zn-O-terminated ZnGa<sub>2</sub>O<sub>4</sub> surfaces in optimizing semiconductor-based gas sensors, offering both oxidative and reductive potentials and making them versatile for diverse applications.…”
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699
64Cu-chelated InP/ZnSe/ZnS QDs as PET/fluorescence dual-modal probe for tumor imaging
Published 2025-02-01“…Positron Emission Tomography (PET)/fluorescence dual-modal imaging combines deep penetration and high resolution, making it a promising approach for tumor diagnostics. Semiconductor nanocrystals, known as quantum dots (QDs), have garnered significant attention for fluorescence imaging owing to their tunable emission wavelength, high quantum yield, and excellent photostability. …”
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700
A 5.5–7.5‐GHz band‐configurable wake‐up receiver fully integrated in 45‐nm RF‐SOI CMOS
Published 2022-10-01“…Abstract This work investigates a 5.5–7.5‐GHz band‐configurable duty‐cycled wake‐up receiver (WuRX) fully implemented in a 45‐nm radio‐frequency (RF) silicon‐on‐insulator (SOI) complementary‐metal‐oxide‐semiconductor (CMOS) technology. Based on an uncertain intermediate frequency (IF) super‐heterodyne receiver (RX) topology, the WuRX analogue front‐end (AFE) incorporates a 5.5–7.5‐GHz band‐tunable low‐power low‐noise amplifier, a low‐power Gilbert mixer, a digitally controlled oscillator (DCO), a 100‐MHz IF band‐pass filter (BPF), an envelope detector, a comparator, a pulse generator and a current reference. …”
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