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601
Detection of Foodborne Pathogens Through Volatile Organic Compounds Sensing via Metal Oxide Gas Sensors
Published 2025-01-01“…Over the past few decades, there has been an increased focus on developing highly precise and trusted biosensors in an effort to eliminate the discrepancy between reporting demands and currently used traditional detection approaches. Metal oxide semiconductor (MOS)‐based gas sensors have rapidly advanced in recent years, becoming a dominating technology for developing devices in food‐quality management, biomedical research, and diagnostics. …”
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602
Models of waveguides combining gradient and nonlinear optical layers
Published 2023-08-01“…It is shown that by combining different semiconductor crystals in a composite waveguide, it is possible to obtain a nonlinear optical layer on one side of the waveguide interface and a layer with a graded-index dielectric permittivity profile on the other.…”
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603
Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics
Published 2024-01-01“…In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. …”
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604
The impacts of website information disclosure on organizational attractiveness: the moderating effect of corporate social responsibility performance
Published 2025-01-01“…At the organizational level, 30 listed companies (in the semiconductor, electronics, and optoelectronics fields) from the Digital Times’ Top 100 Favorite Companies were selected as a sample. …”
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605
Improving radiation tolerance with room temperature annealing of pre-existing defects
Published 2025-01-01“…Pre-existing defects in semiconductor devices can act as nucleation sites for radiation damage. …”
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606
CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION
Published 2018-06-01“…The study of semiconductor materials and devices containing a narrow layer of impurity atoms and/or intrinsic point defects of the crystal lattice is of fundamental and practical interest. …”
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607
Optimizing solar performance of CFTSe-based solar cells using MoSe2 as an innovative buffer layers
Published 2025-01-01“…Abstract In this study, we explore the photovoltaic performance of an innovative high efficiency heterostructure utilizing the quaternary semiconductor Cu2FeSnSe4 (CFTSe). This material features a kesterite symmetrical structure and is distinguished by its non-toxic nature and abundant presence in the earth’s crust. …”
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608
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609
Extreme Electron‐Photon Interaction in Disordered Perovskites
Published 2025-02-01“…In this paper, a new strategy based on both cases for the light‐matter‐interaction enhancement in a direct bandgap semiconductor – lead halide perovskite CsPbBr3 – by using electric pulse‐driven structural disorder, is addressed. …”
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610
THE EFFECT OF CRITICAL ELECTRIC FIELDS ON THE ELECTRONIC DISTRIBUTION OF BILAYER ARMCHAIR GRAPHENE NANORIBBONS
Published 2021-12-01“…The influence of the parallel electric field is less important in changing the gap size, resulting in the absence of the critical voltage over a very wide range [–1.5 V; 1.5 V] for the semiconductor-insulator group. Nevertheless, it is interesting to note the powerful role of the parallel electric field in modifying the energy band and electronic distribution at each energy level. …”
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611
Magnetic field strength gradiometer
Published 2021-09-01“…The paper considers the possibility of constructing a magnetic field strength gradient meter based on the absolute helical instability of electron-hole plasma of a semiconductor sample. The functional scheme of the gradiometer and the results of experimental and theoretical studies of the sensitive element of the gradiometer are presented.…”
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612
Performance Study of Ultraviolet AlGaN/GaN Light-Emitting Diodes Based on Superlattice Tunneling Junction
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613
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614
Real-Time Respiratory Monitoring Using a Sparse-Sampled Frequency-Scanning White-Light Interferometry System
Published 2025-01-01“…We propose a novel sparse-sampled white-light interferometry system for respiratory monitoring, utilizing a monolithic integrated semiconductor tunable laser for quasi-continuous frequency scanning across 191.2–196.15 THz at a sampling rate of 5 kHz. …”
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615
Optimizing MoS2 Electrolyte‐Gated Transistors: Stability, Performance, and Sensitivity Enhancements
Published 2024-12-01“…Postmortem analysis identified key areas for improvement leadinf to three major modifications: 1) a double‐junction Ag/AgCl electrode to prevent ion leakage, 2) a protective resist layer to shields the monolayer, and 3) precise etching to confine the semiconductor material, reducing parasitic currents. …”
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616
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618
Hydrothermal Synthesis and Responsive Characteristics of Hierarchical Zinc Oxide Nanoflowers to Sulfur Dioxide
Published 2016-01-01“…The sensing performances of semiconductor gas sensors can be improved by morphology tailoring. …”
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619
Long-term stable laser injection locking for quasi-CW applications
Published 2025-01-01“…Commonly, injection locking of high-power semiconductor laser diodes are used for this purpose. …”
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620
Enhanced Terahertz Sensing via On-Chip Integration of Diffractive Optics with InGaAs Bow-Tie Detectors
Published 2025-01-01“…This work demonstrates the single-sided integration of Fresnel-zone-plate-based optical elements with InGaAs bow-tie diodes directly on a semiconductor chip. Numerical simulations were conducted to optimize the Fresnel zone plate’s focal length and the InP substrate’s thickness to achieve constructive interference at 600 GHz, room-temperature operation and achieve a sensitivity more than an order of magnitude higher—up to 24.5 V/W—than that of a standalone bow-tie detector. …”
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