Hybrid Hamiltonian Simulation Approach for the Analysis of Quantum Error Correction Protocol Robustness by Benjamin Gys, Lander Burgelman, Kristiaan De Greve, Georges Gielen, Francky Catthoor

“…The development of future full-scale quantum computers (QCs) not only comprises the design of good quality qubits, but also entails the design of classical complementary metal–oxide semiconductor (CMOS) control circuitry and optimized operation protocols. …”
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Preparation of a Counter Electrode with P-Type NiO and Its Applications in Dye-Sensitized Solar Cell by Chuen-Shii Chou, Chin-Min Hsiung, Chun-Po Wang, Ru-Yuan Yang, Ming-Geng Guo

“…This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO) on a dye-sensitized solar cell (DSSC). …”
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RAPID: Redundancy Analysis With Parallelized and Intelligent Distribution by Younwoo Yoo, Hayoung Lee, Seung Ho Shin, Sungho Kang

“…The continuous progress in semiconductor technology, particularly in nanotechnology, has led to smaller memory cells and increased fault frequency due to their proximity. …”
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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers by Sangyeob Kim, Ogyun Seok

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Investigation of an Electrochemical Method for Separation of Copper, Indium, and Gallium from Pretreated CIGS Solar Cell Waste Materials by Anna M. K. Gustafsson, Fredrik Björefors, Britt-Marie Steenari, Christian Ekberg

“…Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. …”
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Construction of S-type TiO2/CoPc heterojunction and photocatalytic degradation of tetracycline by WANG Jun, FU Shuang, HOU Peng, LIU Jun, SUN Chunxue, ZHANG Hongguang

“…Semiconductor photocatalysis is an effective strategy for solving environmental pollution problems. …”
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GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH4)2SX + UV Interface Treatment Technology by Chao-Wei Lin, Hsien-Chin Chiu

“…This study examines the praseodymium-oxide- (Pr2O3-) passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH4)2SX + ultraviolet (UV) illumination. …”
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A high speed processor for elliptic curve cryptography over NIST prime field by Xianghong Hu, Xueming Li, Xin Zheng, Yuan Liu, Xiaoming Xiong

“…On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. …”
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Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes by I. E. Paulauskas, G. E. Jellison, L. A. Boatner, G. M. Brown

“…Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. …”
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Dynamic Modeling of Stress-Induced Defect Expansion in VCSELs by Yuqi Zhang, Xun Li, Jia Zhao

“…Many failures of semiconductor-based oxide confined vertical cavity surface emitting lasers (VCSELs) are closely related to the generation and expansion of defects in the device structure. …”
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Nanoscaled Electrocatalytic Optically Modulated ZnO Nanoparticles through Green Process of Punica granatum L. and Their Antibacterial Activities by Xolile Fuku, Abdoulaye Diallo, Malik Maaza

“…The optical band gap of ZnO NPs was calculated to be 3.48 eV which indicates that ZnO NPs can be used in metal oxide semiconductor-based devices. Further, the nanomaterials were also found to be good inhibitors of bacterial strains at both low and high concentrations of 5–10 mg mL−1.…”
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LDDP-Net: A Lightweight Neural Network with Dual Decoding Paths for Defect Segmentation of LED Chips by Jie Zhang, Ning Chen, Mengyuan Li, Yifan Zhang, Xinyu Suo, Rong Li, Jian Liu

“…Chip defect detection is a crucial aspect of the semiconductor production industry, given its significant impact on chip performance. …”
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Probing and manipulating the Mexican hat-shaped valence band of In2Se3 by James Felton, Jordan Harknett, Joe Page, Zhuo Yang, Nada Alghofaili, James N. O’Shea, Laurence Eaves, Yoshimitsu Kohama, Mark T. Greenaway, Amalia Patanè

“…Abstract Ferroelectrics based on van der Waals semiconductors represent an emergent class of materials for disruptive technologies ranging from neuromorphic computing to low-power electronics. …”
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The thermoelectric conversion efficiency problem: Insights from the electron gas thermodynamics close to a phase transition by I. Khomchenko, A. Ryzhov, F. Maculewicz, F. Kurth, R. Hühne, A. Golombek, M. Schleberger, C. Goupil, Ph. Lecoeur, A. Böhmer, G. Benenti, G. Schierning, H. Ouerdane

“…By relating the thermoelastic properties of the electronic working fluid to its transport properties (considering noninteracting electron systems), we show why the performance of conventional semiconductor materials is doomed to remain low. Analyzing the temperature dependence of the power factor theoretically in 2D systems and experimentally in a thin film, we find that in the fluctuation regimes of an electronic phase transition, the thermoelectric power factor can significantly increase owing to the increased compressibility of the electron gas. …”
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Revised direct bandgap and band parameters for AlP: hybrid-functional first-principles calculations vs experiment by Cónal Murphy, Eoin P. O’Reilly, Christopher A. Broderick

“…Despite its relevance to the development of quantum-confined heterostructures for classical and quantum applications, there is significant uncertainty regarding several key band parameters for the indirect-gap III–V semiconductor AlP. Critically, using hybrid-functional first-principles calculations, we find that the Γ6c–Γ8v bandgap is ∼1 eV larger than the widely assumed value of 3.63 eV. …”
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Boron-doped diamond MOSFETs operating at temperatures up to 400°C by Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide

“…The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. …”
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Wavelength Tuning Free Transceiver Module in OLT Downstream Multicasting 4λ × 10 Gb/s TWDM-PON System by M. S. Salleh, A. S. M. Supa’at, S. M. Idrus, S. Yaakob, Z. M. Yusof

“…Meanwhile, the fixed wavelength optical line terminal (OLT) transmitter with wavelength tuning free features has been designed to integrate with the semiconductor optical amplifier (SOA) and passive arrayed waveguide grating (AWG). …”
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A four‐stage yield optimization technique for analog integrated circuits using optimal computing budget allocation and evolutionary algorithms by Abbas Yaseri, Mohammad Hossein Maghami, Mehdi Radmehr

“…The yield value obtained from the simulation results for two‐stage class‐AB Operational Transconductance Amplifer (OTA) in 180 nm Complementary Metal‐Oxide‐Semiconductor (CMOS) technology is 99.85%. The proposed method has less computational effort and high accuracy than the MC‐based approaches. …”
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Charge-Based Compact Modeling of OECTs for Neuromorphic Applications by Ghader Darbandy, Malte Koch, Lukas M. Bongartz, Karl Leo, Hans Kleemann, Alexander Kloes

“…In this work, we develop a combined physics-based compact model that integrates the Nernst equation from electrochemistry with thermally activated charges from semiconductor physics. This model enables easy incorporation into circuit simulations and provides a simple core framework for further extensions to account for additional effects. …”
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The method of non-destructive measurement of power thyristor surge current by G. N. Anisimov, K. K. Kim, A. A. Tkachuk, A. Yu. Kuzmenko

“…The method is based on continuous control at each moment of time of the dynamic capacitance, the changing in the nature of the time dependence of which predicts the destruction of the semiconductor structure.…”
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