Showing 401 - 420 results of 896 for search '"semiconductor"', query time: 0.05s Refine Results
  1. 401
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  3. 403

    Synergetic Phase Modulation and N‐Doping of MoS2 for Highly Sensitive Flexible NO2 Sensors by Jiyun Kim, Mengyao Li, Chun‐Ho Lin, Long Hu, Tao Wan, Ayad Saeed, Peiyuan Guan, Zijian Feng, Tushar Kumeria, Jianbo Tang, Dawei Su, Tom Wu, Dewei Chu

    Published 2025-01-01
    “…It is found that 2H semiconductor phase with nitrogen doping (N‐doping) in flexible gas sensors constructed with Ag electrodes exhibits the highest sensitivity of ≈2500% toward 10 ppm of NO2. …”
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    Article
  4. 404

    Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

    Published 2025-01-01
    “…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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    Article
  5. 405

    Enhanced Temperature Control Method Using ANFIS with FPGA by Chiung-Wei Huang, Shing-Tai Pan, Jun-Tin Zhou, Cheng-Yuan Chang

    Published 2014-01-01
    “…Temperature control in etching process is important for semiconductor manufacturing technology. However, pressure variations in vacuum chamber results in a change in temperature, worsening the accuracy of the temperature of the wafer and the speed and quality of the etching process. …”
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    Article
  6. 406

    Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations by Min Chen, Yiyou Wang, Yeping Li

    Published 2014-01-01
    “…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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    Article
  7. 407

    Gatemonium: A Voltage-Tunable Fluxonium by William M. Strickland, Bassel Heiba Elfeky, Lukas Baker, Andrea Maiani, Jaewoo Lee, Ido Levy, Jacob Issokson, Andrei Vrajitoarea, Javad Shabani

    Published 2025-02-01
    “…We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. …”
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    Article
  8. 408

    Blueprint for All-to-All-Connected Superconducting Spin Qubits by Marta Pita-Vidal, Jaap J. Wesdorp, Christian Kraglund Andersen

    Published 2025-01-01
    “…Andreev (or superconducting) spin qubits (ASQs) have recently emerged as a promising qubit platform that combines superconducting circuits with semiconductor spin degrees of freedom. While recent experiments have successfully coupled two ASQs, how to realize a scalable architecture for extending this coupling to multiple distant qubits remains an open question. …”
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    Article
  9. 409

    Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells by Shuaijie Wang, Dong Zhang, Zhenhe Ju

    Published 2022-01-01
    “…Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. …”
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    Article
  10. 410

    Performance of clock sources and their influence on time synchronization in wireless sensor networks by Francisco Tirado-Andrés, Alvaro Araujo

    Published 2019-09-01
    “…Complementary metal-oxide-semiconductor oscillators have a low accuracy, bigger than 500 ppm, and a high dependency with temperature. …”
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    Article
  11. 411

    Hybrid Josephson Rhombus: A Superconducting Element with Tailored Current-Phase Relation by L. Banszerus, C. W. Andersson, W. Marshall, T. Lindemann, M. J. Manfra, C. M. Marcus, S. Vaitiekėnas

    Published 2025-02-01
    “…Here, we introduce the hybrid Josephson rhombus, a highly tunable superconducting circuit containing four semiconductor-superconductor hybrid Josephson junctions embedded in a loop. …”
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    Article
  12. 412

    Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures by Michael V. Davidovich, Igor S. Nefedov, Olga E. Glukhova, J. Miguel Rubi

    Published 2025-01-01
    “…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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    Article
  13. 413

    THE TECHNIQUES SEPARATING THREE OVERLAP PEAKS IN GAMMA SPECTRUM by Trịnh Ngọc Pháp, Mai Xuân Trung

    Published 2017-09-01
    “…Based on separating the two overlap peaks method has been implemented in our previous article, the separating three overlap peaks was successfully implemented in this paper, in which the calculations were tested with gamma-ray spectra by using a Semiconductor detector and a Scintillator detector.…”
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  14. 414

    RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW by LI Lun, LI ShuJuan, TANG AoFei, LI Yan

    Published 2015-01-01
    “…Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.…”
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  15. 415

    Computational Study of Metal-Free Magnetism and Spin-Dependent Seebeck Effect in Silicene Nanoribbons with Zigzag and Klein Edges by Xingyi Tan, Gang Xu, Youchang Jiang, Dahua Ren

    Published 2022-01-01
    “…With the increase of the width parameter N from 4 to 19, the N-ZKSiNRs pass from the indirect-gap bipolar magnetic semiconducting state (BMS) to the bipolar spin-gapless semiconductor (BSGS) and eventually to half-metallicity (HM). …”
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    Article
  16. 416

    Gelatin Used as a Transductor in an Optical Hygrometer Based on a Fabry-Perot Interferometer by Sergio Calixto

    Published 2022-01-01
    “…The measurement of humidity shows its importance in applications such as food processing, meteorological, semiconductor, building and construction, medical, and automotive to mention but a few. …”
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    Article
  17. 417

    Diverse Role of Silicon Carbide in the Domain of Nanomaterials by T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly

    Published 2012-01-01
    “…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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  18. 418

    Degradation of VDMOSFET by Heavy Ion Irradiations by C. Salame, F. Pelanchon, P. Mialhe

    Published 2000-01-01
    “…This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. …”
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