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401
Highly sensitive NO2 gas sensors based on heterostructured p-rGO/n-Ga2O3 nanorods
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402
High Quality–Factor All–Dielectric Metacavity for Label–Free Biosensing
Published 2025-01-01Get full text
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403
Synergetic Phase Modulation and N‐Doping of MoS2 for Highly Sensitive Flexible NO2 Sensors
Published 2025-01-01“…It is found that 2H semiconductor phase with nitrogen doping (N‐doping) in flexible gas sensors constructed with Ag electrodes exhibits the highest sensitivity of ≈2500% toward 10 ppm of NO2. …”
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404
Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy
Published 2025-01-01“…Rutile GeO2 is a promising ultra-wide bandgap semiconductor for future power electronic devices whose alloy with the wide bandgap semiconductor rutile-SnO2 enables bandgap engineering and the formation of heterostructure devices. …”
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405
Enhanced Temperature Control Method Using ANFIS with FPGA
Published 2014-01-01“…Temperature control in etching process is important for semiconductor manufacturing technology. However, pressure variations in vacuum chamber results in a change in temperature, worsening the accuracy of the temperature of the wafer and the speed and quality of the etching process. …”
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406
Global Existence and Large Time Behavior of Solutions to the Bipolar Nonisentropic Euler-Poisson Equations
Published 2014-01-01“…We study the one-dimensional bipolar nonisentropic Euler-Poisson equations which can model various physical phenomena, such as the propagation of electron and hole in submicron semiconductor devices, the propagation of positive ion and negative ion in plasmas, and the biological transport of ions for channel proteins. …”
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407
Gatemonium: A Voltage-Tunable Fluxonium
Published 2025-02-01“…We present a new style of fluxonium qubit, gatemonium, based on an all-superconductor-semiconductor hybrid platform. The linear inductance is achieved using 600 planar Al-InAs Josephson junctions (JJs) in series. …”
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408
Blueprint for All-to-All-Connected Superconducting Spin Qubits
Published 2025-01-01“…Andreev (or superconducting) spin qubits (ASQs) have recently emerged as a promising qubit platform that combines superconducting circuits with semiconductor spin degrees of freedom. While recent experiments have successfully coupled two ASQs, how to realize a scalable architecture for extending this coupling to multiple distant qubits remains an open question. …”
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409
Interfacial Transport Study of Ultra-Thin InN-Enhanced Quantum Dot Solar Cells
Published 2022-01-01“…Solar cells are a means of converting solar energy into electrical energy using the photovoltaic effect of semiconductor materials. This photoelectric absorber layer has been developed for more than 70 years. …”
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410
Performance of clock sources and their influence on time synchronization in wireless sensor networks
Published 2019-09-01“…Complementary metal-oxide-semiconductor oscillators have a low accuracy, bigger than 500 ppm, and a high dependency with temperature. …”
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411
Hybrid Josephson Rhombus: A Superconducting Element with Tailored Current-Phase Relation
Published 2025-02-01“…Here, we introduce the hybrid Josephson rhombus, a highly tunable superconducting circuit containing four semiconductor-superconductor hybrid Josephson junctions embedded in a loop. …”
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412
Nanoscale nonlocal thermal transport and thermal field emission in high-current resonant tunnel structures
Published 2025-01-01“…The model applies to vacuum and semiconductor resonant tunnel diode and triode structures with two and three electrodes and to the general case of two-way tunneling with electrode heating. …”
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413
THE TECHNIQUES SEPARATING THREE OVERLAP PEAKS IN GAMMA SPECTRUM
Published 2017-09-01“…Based on separating the two overlap peaks method has been implemented in our previous article, the separating three overlap peaks was successfully implemented in this paper, in which the calculations were tested with gamma-ray spectra by using a Semiconductor detector and a Scintillator detector.…”
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414
RESEARCH PROGRESS ON CUTTING TECHNOLOGY OF SIC MONO-CRYSTAL WAFER WITH WIRE SAW
Published 2015-01-01“…Having a unique physical characteristics and stable semiconductor properties,silicon carbide( Si C) monocrystal wafer has been widely used in integrated circuits,space optics and other fields.In manufacturing process of Si C monocrystal wafer,cutting is primary key process,which the cutting costs accounts for more than 50% of the whole wafer processing costs.In this paper,the datum and relevant literature of domestic and foreign were reviewed to,the current research status of Si C cutting technology,especially cutting with wire saw,and cutting equipment were studied.Moreover,the existing problems in Si C cut by wire saw and in cutting equipment was analyzed.It is proposed that the future researching direction of Si C wafer cutting technology by wire saw.…”
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415
Computational Study of Metal-Free Magnetism and Spin-Dependent Seebeck Effect in Silicene Nanoribbons with Zigzag and Klein Edges
Published 2022-01-01“…With the increase of the width parameter N from 4 to 19, the N-ZKSiNRs pass from the indirect-gap bipolar magnetic semiconducting state (BMS) to the bipolar spin-gapless semiconductor (BSGS) and eventually to half-metallicity (HM). …”
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416
Gelatin Used as a Transductor in an Optical Hygrometer Based on a Fabry-Perot Interferometer
Published 2022-01-01“…The measurement of humidity shows its importance in applications such as food processing, meteorological, semiconductor, building and construction, medical, and automotive to mention but a few. …”
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417
Diverse Role of Silicon Carbide in the Domain of Nanomaterials
Published 2012-01-01“…Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. …”
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418
Degradation of VDMOSFET by Heavy Ion Irradiations
Published 2000-01-01“…This article focuses on the effect of the heavy ions irradiations on the electrical characteristics of VDMOSFET (Vertical Diffusion Metal Oxide Semiconductor Field Effect Transistor) devices. A summary of the total dose effects and the single event effects is covered to evaluate the experimental observations. …”
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419
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Ultra robust negative differential resistance memristor for hardware neuron circuit implementation
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