Silicon-based tribovoltaic nanogenerators: Surface chemistry isotope effect on device performance and durability by Xin Lyu, Melanie Macgregor, Nadim Darwish, Simone Ciampi

“…Schottky-based tribovoltaic nanogenerators (TVNGs) are a type of TENG that incorporates a semiconductor–metal barrier, known as a Schottky barrier, into their design. …”
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A Run-Time Reconfigurable Ge Field-Effect Transistor With Symmetric On-States by Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber

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All-dielectric metalens based on a single colloidal particle for photoconductive optical-to-terahertz switches by I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev

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Hydrogen evolution from water using CdS as photosensitizer by Tatiana Oncescu, M. Contineanu, Lucia Meahcov

“…Colloidal chemical approaches are increasingly utilised for the preparation and stabilization of semiconductor nanoparticles.…”
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THE FORMATION OF BIMETALLIC CONNECTION IN WELDER DEPOSITION UNDER LASER WELDING WITH THE FILLER WIRE FEED by A. P. Yelistratov

“…The metallurgical and technological features of welding deposition in a robotic unit with a semiconductor laser are analyzed. The prospects of using beam with low energy density in the spot heating for applying metallic layers using filler wire are shown.…”
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Thermodynamic properties of iron, aluminum, boron and phosphorus in dilute silicon solutions by molecular interaction volume model by Li S.-Y., Liu K., Yang F., Xi F.-S., Wu J.-J., Ma W.-H., Lei Y., Wang Y.-J., Zhang X.-N.

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Role of Interfacial Oxide Layer in MoOx/n-Si Heterojunction Solar Cells by X. M. Song, Z. G. Huang, M. Gao, D. Y. Chen, Z. Fan, Z. Q. Ma

“…The simulation results revealed that the quasi p-type layer behaved as a semiconductor material with a wide band gap of 2.30 eV, facilitating the transport of holes for negatively charged centers. …”
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Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate by Hung-Pin Hsu, Pong-Hong Yang, Jeng-Kuang Huang, Po-Hung Wu, Ying-Sheng Huang, Cheng Li, Shi-Hao Huang, Kwong-Kau Tiong

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Features of the receiving of piezoelectric thin films by plasma spraying of powdery AlN by V. S. Feshchenko, K. N. Zyablyuk, E. A. Senokosov, V. I. Chukita, D. A. Kiselev

“…Оne of the promising materials in solid state electronics is the AlN compound. A wide range of semiconductor devices are produced from it, such as photodetectors, LEDs, piezoelectric converters, etc. …”
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Orientation-selective spin-polarized edge states in monolayer NiI2 by Yu Wang, Xinlei Zhao, Li Yao, Huiru Liu, Peng Cheng, Yiqi Zhang, Baojie Feng, Fengjie Ma, Jin Zhao, Jiatao Sun, Kehui Wu, Lan Chen

“…Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. …”
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Features of modern circuitry of strain-resistive pressure sensors: fiber-optic pyrometric thermal compensation, optical radiation supply by E. V. Leun, V. К. Sysoev, A. E. Shakhanov, Yu. N. Mishin

“…Noise properties of semiconductor and resistive strainresistor are also considered.…”
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THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING by Tien Lam Vu, Hoang Thoan Nguyen, Huu Lam Nguyen, Ngoc Trung Nguyen, Quoc Van Duong, Duc Dung Dang

“…The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. …”
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Ultrafast Floquet engineering of Fermi-polaron resonances in charge-tunable monolayer WSe2 devices by Hyojin Choi, Jinjae Kim, Jiwon Park, Jekwan Lee, Wonhyeok Heo, Jaehyeon Kwon, Suk-Ho Lee, Faisal Ahmed, Kenji Watanabe, Takashi Taniguchi, Zhipei Sun, Moon-Ho Jo, Hyunyong Choi

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Approaches for reducing metallization-induced losses in industrial TOPCon solar cells by Mack Sebastian, Ourinson Daniel, Meßmer Marius, Teßmann Christopher, Krieg Katrin, Benick Jan, Huyeng Jonas D., Greulich Johannes, Wolf Andreas

“…Recombination at metal-semiconductor interfaces plays a crucial part in this, however, processing conditions which lead to low recombination, such as e.g., a low firing set temperature or the use of thick dielectrics, typically result in increased contact resistivities. …”
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Performance Improvement of Dye-Sensitized Solar Cell- (DSSC-) Based Natural Dyes by Clathrin Protein by Prihanto Trihutomo, Sudjito Soeparman, Denny Widhiyanuriyawan, Lilis Yuliati

“…This low efficiency is due to the barrier of electron transfer in the TiO2 semiconductor layer. In this study, the addition of clathrin protein to the TiO2 layer was used to increase electron transfer in the semiconductor layer resulting in improved DSSC performance. …”
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Progress in active devices for optical fiber communication by Qiming WANG, Lingjuan ZHAO, Hongliang ZHU, Qin HAN, Buwen CHENG

“…The rapid progress of optical fiber communication makes it become the key technology for the information society.The active and passive optoelectronic devices are the foundation of the optical communication.The progress and development trend of the key active optoelectronic devices were reviewed,including DFB laser,photonic integrated circuit,980 nm high power laser for EDFA pumping,compound semiconductor photodetector and Si-based long wavelength photodetector.…”
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RECOVERY OF JAPAN'S TRADE BALANCE SURPLUS AS THE ENGINE OF THE ECONOMY GROWTH by D. Shevchenko

“…The general results of the first and second quarters of 2017 have been summed up, which make it possible to talk about the prospects for the growth of the Japanese economy and, most important, highlight the changes in the export structure that are associated with both the restoration of the automotive industry's traffic flow and the dynamics of semiconductor exports, and subsequent consumer demand dynamics implementation of the socio-economic development strategy set by the Government of Japan.…”
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Buried Interface Smoothing Boosts the Mechanical Durability and Efficiency of Flexible Perovskite Solar Cells by Erxin Zhao, Yongshuai Gong, Yixin Dong, Wanlei Dai, Chou Liu, Tinghuan Yang, Nan Wu, Ye Yang, Zheng Zhang, Chenqing Tian, Buyi Yan, Dongxue Liu, Lu Zhang, Tianqi Niu

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Simple Modeling of the Ratio of Fields at a Tip and a Contacting Surface with External Illumination by E. Bortchagovsky

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METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS by V. A. Pilipenko, A. N. Petlitsky, V. A. Gorushko, S. V. Shvedov, V. V. Ponaryadov

“…The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due to deflection registration of the r eflected laser beam from the position, corresponding to reflection from the ideally plat surface, by means of its scanning by one of the wafer diameters it is possible to determine its bend profile.…”
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