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A Comparative Analysis of Middle-of-Line Contact Architectures for Complementary FETs
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322
Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Published 2003-01-01Get full text
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323
A Study on the Development of Real-Time Chamber Contamination Diagnosis Sensors
Published 2024-12-01“…Plasma processes are critical for achieving precise device fabrication in semiconductor manufacturing. However, polymer accumulation during processes like plasma etching can cause chamber contamination, adversely affecting plasma characteristics and process stability. …”
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Optical signatures of lattice strain in chemically doped colloidal quantum wells
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326
Metrology of metasurfaces: optical properties
Published 2025-01-01“…Relying on planar nanofabrication processes closely akin to the semiconductor industry, metasurface technology could benefit from cost-effective and potentially large-scale fabrication techniques forthwith. …”
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327
Modulation Electronic Properties of Silicane/SnSe2 Van der Waals Heterostructures Using External Force and Electric Field
Published 2021-01-01“…Furthermore, it is determined that the silicane/SnSe2 vdWhs appears to have a semiconductor-metal phase transition at a strain of −5%. …”
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328
From source to sink: the path to efficient energy harvesting with LEDs and displays
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SnO2 Nanostructure as Pollutant Gas Sensors: Synthesis, Sensing Performances, and Mechanism
Published 2015-01-01“…Gas sensors use a metal oxide semiconductor, specifically SnO2 nanostructures. This semiconductor is interesting and worthy of further investigation because of its many uses, for example, as lithium battery electrode, energy storage, catalyst, and transistor, and has potential as a gas sensor. …”
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331
A soft switching non‐isolated bidirectional DC–DC converter with improved voltage conversion ratio and minimum number of switches
Published 2024-10-01“…Also, the auxiliary circuit provides soft switching conditions for all the semiconductor elements, regardless of the power flow direction and without any extra voltage stress. …”
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332
Mutator Circuit for Memcapacitor Emulator Using Operational Transconductance Amplifiers
Published 2024-12-01“…All simulations were conducted using LTSpice with Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm complementary metal oxide semiconductor (CMOS) process parameters. …”
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333
Controllable Electrochemical Synthesis and Photovoltaic Performance of Bismuth Oxide/Graphene Oxide Nanostructure Arrays
Published 2022-09-01“…The electrodeposition coated graphene oxide (GO) sheets on semiconductor metal oxide substrates are reduced to produce transparent, flexible, and conductive electrodes. …”
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334
Classification of electric resistive heating boilers for autonomous water heating systems
Published 2023-10-01“…The object of the research is the variants of designs of heat exchangers for generating heat energy using resistor heating elements of normal conductor and semiconductor type. Various variants of indirect heating of the coolant and contacts of the surface of the heating elements with the coolant are considered. …”
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Novel technique to produce porous thermochromic VO2 nanoparticle films using gas aggregation source
Published 2025-01-01“…Abstract Vanadium dioxide (VO2) is a phase transition material that undergoes semiconductor-to-metal transition at the temperature of about 68 °C. …”
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337
Dislocation climb mediated Coble-type grain boundary deformation in gold nanocrystals
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338
Methylene Blue Dye Photodegradation during Synthesis and Characterization of WO3 Nanoparticles
Published 2022-01-01“…Semiconductor-based photocatalytic systems have found widespread use in environmental pollution cleanup and renewable energy production. …”
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339
Research on transient energy suppression strategy of intrinsically safe output power supply for mine
Published 2025-01-01“…In response to the requirements of GB/T 3836.4—2021 Explosive atmosphere Part 4: Equipment with protection by intrinsic safety “i” for outputting transient energy of intrinsically safe power sources based on the principle of semiconductor rapid short circuit protection, taking typical mining “ib” class explosion-proof and intrinsically safe power supplies and intrinsically safe battery power supplies as research objects, the study clarifies the transient energy testing device and transient energy calculation method. …”
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