Physical unclonable in-memory computing for simultaneous protecting private data and deep learning models by Wenshuo Yue, Kai Wu, Zhiyuan Li, Juchen Zhou, Zeyu Wang, Teng Zhang, Yuxiang Yang, Lintao Ye, Yongqin Wu, Weihai Bu, Shaozhi Wang, Xiaodong He, Xiaobing Yan, Yaoyu Tao, Bonan Yan, Ru Huang, Yuchao Yang

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Modeling of Transistor's Tracking Behavior in Compact Models by Ning Lu

“…We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous 𝑁(𝑁−1)/2 tracking relations among 𝑁 transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. …”
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ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY by V. S. Niss, A. S. Vaskou, A. S. Turtsevich, A. F. Kerentsev, V. K. Kononenko

“…In the transition layer at the border of semiconductor-solder the thermal resistance increases due to changes in the mechanism of heat transfer. …”
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Flat-Panel-Rectenna With Broad RF Energy Harvesting Coverage for Wireless-Powered Sensor Applications by Yan Han, Eunji Kim, Han Lim Lee

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Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor by Yuri D. Ivanov, Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Andrey F. Kozlov, Ivan D. Shumov, Irina A. Ivanova, Alexander I. Archakov, Vladimir P. Popov, Alexander V. Latyshev, Konstantin V. Rudenko, Alexander V. Glukhov

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Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition by Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng

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A comparative study on spin-to-charge and charge-to-spin conversion using modulated Dirac surface states of Bi2Se3 by Youngmin Lee, Jonghoon Kim, Seungwon Rho, Seok-Bo Hong, Hyeongmun Kim, Jaehan Park, Dajung Kim, Chul Kang, Myung-Ho Bae, Mann-Ho Cho

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The Mechanism of Transpassive Dissolution of AISI 321 Stainless Steel in Sulphuric Acid Solution by A. Fattah-Alhosseini, N. Attarzadeh

“…The transpassive film is modeled as a highly doped n-type semiconductor—insulator-p-type semiconductor structure. …”
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Peculiarities of Charge Transfer in SiO2(Ni)/Si Nanosystems by Egor Yu. Kaniukov, Dzmitry V. Yakimchuk, Victoria D. Bundyukova, Alena E. Shumskaya, Abdulkarim A. Amirov, Sergey E. Demyanov

“…Special attention is given to analysis of the results in the context of the band structure and physical properties of dielectric on semiconductor systems with metallic inclusions in the dielectric matrix. …”
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Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study by Maura Pavesi, Antonella Parisini, Pietro Calvi, Alessio Bosio, Roberto Fornari

“…The presented method can be easily extended to any kind of metal/semiconductor or degenerate-semiconductor/semiconductor interface.…”
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Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverter by Kang Hee Lee, Mincheol Kim, Jongmin Lee, Jang Hyun Kim

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Piezoresistive Cantilever Microprobe with Integrated Actuator for Contact Resonance Imaging by Tianran Ma, Michael Fahrbach, Erwin Peiner

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Progress in Thin Film Solar Cells Based on Cu2ZnSnS4 by Hongxia Wang

“…This paper, will review the wide range of techniques that have been used to deposit CZTS semiconductor thin films. The performance of the thin film solar cells using the CZTS material will also be discussed.…”
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Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron by Hong-Sub Lee, Hyung-Ho Park

“…Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. …”
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Kinetic Approach for the Adsorption of Organophosphorous Pesticides from Aqueous Solution Using “Waste” Jute Fiber Carbon by S. Senthilkumaar, S. K. Krishna, P. Kalaamanic, C. V. Subburamaan, N. Ganapathy Subramaniam, T. W. Kang

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Recent Progress of Graphene-Based Photoelectrode Materials for Dye-Sensitized Solar Cells by Kaustubh Patil, Soheil Rashidi, Hui Wang, Wei Wei

“…DSSCs are built from a photoelectrode (a dye-sensitized nanocrystalline semiconductor), an electrolyte with redox couples, and a counterelectrode. …”
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Density Functional Study of Electronic and Structural Properties of Gold-Cadmium Selenide/Telluride Nanoclusters by Shimeles T. Bulbula, Hagos W. Zeweldi

“…Semiconductor nanowires are one class of building blocks that show promise for application in nanoscale electronics. …”
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The application of organic materials used in IC advanced packaging:A review by Liu Jikang

“…With the development of advanced technologies, the importance of semiconductor packaging has been further highlighted. …”
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Assessment of Ruthenium Dye N719 Adsorption Kinetics in Mesoporous TiO2 Films of Dye-Sensitized Solar Cells via Nanoplasmonic Sensing by Fahd M. Rajab

“…A dye monolayer formation on a semiconductor surface is critical for efficient dye-sensitized solar cells. …”
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Solar energy driven photocatalytic membrane modules for water reuse in agricultural and food industries. Pre-industrial experience using s-triazines as model molecules by Ignazio Renato Bellobono, Franca Morazzoni, Riccardo Bianchi, Emilia Simona Mangone, Rodica Stanescu, Cristina Costache, Paola Maria Tozzi

“…Quantum yields, as indicative of catalytic and photocatalytic mechanisms, were evaluated satisfactorily: they are discussed, and compared with those of previous studies on the same substrates, carried out in the same module, but in conditions of practically monochromatic irradiation (254 nm) within the range of optical absorption of semiconductor. Finally, in order to compare effectiveness of composite photocatalytic membranes, described above, prepared by photografting, either in the presence or in the absence of an added photopromoter, as well as that of metallic membranes, onto which the semiconductor without any photopromoter was present as a 3–4 μm thick surface layer, directly produced on the nanotechnologically treated surface, with those of other commercial materials, parallel experiments were carried out, by using commercial sheets in which the semiconductor was immobilised, by a method based substantially on glueing by colloidal silica. …”
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