Showing 261 - 280 results of 896 for search '"semiconductor"', query time: 0.12s Refine Results
  1. 261
  2. 262
  3. 263
  4. 264

    Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies by Sihan Sun, Chenlu Wang, Sami Alghamdi, Hong Zhou, Yue Hao, Jincheng Zhang

    Published 2025-01-01
    “…Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. …”
    Get full text
    Article
  5. 265
  6. 266
  7. 267

    High-Bandwidth Chiplet Interconnects for Advanced Packaging Technologies in AI/ML Applications: Challenges and Solutions by Shenggao Li, Mu-Shan Lin, Wei-Chih Chen, Chien-Chun Tsai

    Published 2024-01-01
    “…Despite these challenges, the semiconductor industry is poised for continued growth and innovation, driven by the possibilities unlocked by a robust chiplet ecosystem and novel 3D-IC design methodologies.…”
    Get full text
    Article
  8. 268
  9. 269
  10. 270
  11. 271
  12. 272
  13. 273
  14. 274
  15. 275
  16. 276

    Improving the efficiency of an optical-to-terahertz converter using sapphire fibers by N. V. Zenchenko, D. V. Lavrukhin, I. A. Glinskiy, D. S. Ponomarev

    Published 2023-04-01
    “…Additional Si3N4 and Al2O3 layers are intended for reducing leakage currents in the OTC and reducing the reflection of the laser pump pulse from the air/semiconductor interface (Fresnel losses), respectively, at a gap width of 10 μm. …”
    Get full text
    Article
  17. 277
  18. 278
  19. 279

    Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

    Published 2025-01-01
    “…The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. …”
    Get full text
    Article
  20. 280