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Electromagnetic Functions Modulation of Recycled By-Products by Heterodimensional Structure
Published 2025-02-01Get full text
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262
ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes
Published 2014-01-01Get full text
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263
Ultra‐Broad Emission Copper Halide Scintillator‐Based X‐Ray Imager
Published 2025-01-01Get full text
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264
Recent Advanced Ultra‐Wide Bandgap β‐Ga2O3 Material and Device Technologies
Published 2025-01-01“…Abstract Gallium oxide (Ga2O3) is an emerging ultra‐wide bandgap (UWBG) semiconductor material that has gained significant attention in the field of high voltage and high frequency power electronics. …”
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A PCBM-Modified TiO2 Blocking Layer towards Efficient Perovskite Solar Cells
Published 2017-01-01Get full text
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267
High-Bandwidth Chiplet Interconnects for Advanced Packaging Technologies in AI/ML Applications: Challenges and Solutions
Published 2024-01-01“…Despite these challenges, the semiconductor industry is poised for continued growth and innovation, driven by the possibilities unlocked by a robust chiplet ecosystem and novel 3D-IC design methodologies.…”
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Compositionally-graded ferroelectric thin films by solution epitaxy produce excellent dielectric stability
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270
A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
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271
Improving Edge Quality of Liquid Crystal Display 3D Printing Using Local Dimming Method
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DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS
Published 2015-01-01Get full text
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274
Novel properties of vacancy-ordered perovskite-Cs2BCl6 induced by d-orbital electrons
Published 2025-03-01Get full text
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275
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Improving the efficiency of an optical-to-terahertz converter using sapphire fibers
Published 2023-04-01“…Additional Si3N4 and Al2O3 layers are intended for reducing leakage currents in the OTC and reducing the reflection of the laser pump pulse from the air/semiconductor interface (Fresnel losses), respectively, at a gap width of 10 μm. …”
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277
EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
Published 2015-03-01Get full text
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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Published 2025-01-01“…The objective of this study is to optimize the trade-off between threshold voltage (V _TH ) and maximum drain current (I _D,max ) in recessed gate AlGaN/GaN metal insulator semiconductor high electron mobility transistor (MISHEMT) using atomic layer etching (ALE) technology, with technical computer-aided design (TCAD) simulations assisting in the analysis of the underlying mechanisms to demonstrate the high performance and reliability of GaN-based power application. …”
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