Preparation and Study Annealing Effect on Structure and Optical Properties of ZnIn2(Se0.8Te0.2)4 Thin Film by Bushra H. Hussein, Husham Kamil Mahmood

Subjects: “…Chalcopyrite semiconductors…”
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MESO-CMOS Hybrid Circuits With Time-Multiplexing Technique for Energy and Area-Efficient Computing in Memory by Tzuping Huang, Linran Zhao, Yiming Han, Hai Li, Ian A. Young, Yaoyao Jia

Subjects: “…Beyond-complementary metal–oxide–semiconductor (CMOS) logic…”
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Low‐power 10‐bit 100 MS/s pipelined ADC in digital CMOS technology by Anil Singh, Veena Rawat, Alpana Agarwal

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Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures by Shivendra Singh Parihar, Girish Pahwa, Baker Mohammad, Yogesh Singh Chauhan, Hussam Amrouch

Subjects: “…cryogenic complementary metal–oxide–semiconductor (CMOS)…”
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Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics by Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang

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Schottky‐barrier graphene nanoribbon field‐effect transistors‐based field‐programmable gate array's configurable logic block and routing switch by Sayed Ali Seif Kashani, Hossein Karimiyan Alidash, Sandeep Miryala

Subjects: “…International Technology Roadmap for Semiconductor…”
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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress by Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li

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1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate by Tomomasa Watanabe, Mikihiro Yokozeki, Masashi Takanohashi, Michinori Shiomi, Hiroshi Nakajima, Masayuki Tanaka, Daiji Kasahara, Noriko Kobayashi, Noriyuki Futagawa

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Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition by Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao

“…Abstract (Al2O3)x(HfO2)1−x films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO2 was examined through electrical measurements. …”
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Oriented wide-bandgap perovskites for monolithic silicon-based tandems with over 1000 hours operational stability by Yuxin Yao, Biao Li, Degong Ding, Chenxia Kan, Pengjie Hang, Daoyong Zhang, Zechen Hu, Zhenyi Ni, Xuegong Yu, Deren Yang

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Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs by Tae-Hyun Kil, Ju-Won Yeon, Hyo-Jun Park, Moon-Kwon Lee, Eui-Cheol Yun, Min-Woo Kim, Sang-Min Kang, Jun-Young Park

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Correlation Between Recombination Dynamics and Quantum Barrier Thickness in InGaN-Based Micro-LEDs by Mengyue Mo, Ying Jiang, Penggang Li, Zhiqiang Liu, Xu Yang, Weifang Lu, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang

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Controlling the Crystallinity and Morphology of Bismuth Selenide via Electrochemical Exfoliation for Tailored Reverse Saturable Absorption and Optical Limiting by Hao Yan, Bingxue Li, Junjie Pan, Xuan Fang, Yongji Yu, Dengkui Wang, Dan Fang, Yanyan Zhan, Xiaohua Wang, Jinhua Li, Xiaohui Ma, Guangyong Jin

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Advanced technologies in InGaN micro-LED fabrication to mitigate the sidewall effect by Zhiyuan Liu, Haicheng Cao, Xiao Tang, Tingang Liu, Yi Lu, Zixian Jiang, Na Xiao, Xiaohang Li

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Thermoregulatory integration in hand prostheses and humanoid robots through blood vessel simulation by Sang-Mi Jeong, Jonguk Yang, Youngsoo Kang, Hee Sung Seo, Keumyoung Seo, Taekyung Lim, Sanghyun Ju

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The Investigation of Field Plate Design in 500 V High Voltage NLDMOS by Donghua Liu, Xiangming Xu, Feng Jin, Wenting Duan, Huihui Wang, Jing Shi, Yuan Yao, Jun Hu, Wensheng Qian, Pengfei Wang, David Wei Zhang

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Molecular ferroelectric self-assembled interlayer for efficient perovskite solar cells by Chang Xu, Pengjie Hang, Chenxia Kan, Xiangwei Guo, Xianjiang Song, Chenran Xu, Guofeng You, Wei-Qiang Liao, Haiming Zhu, Dawei Wang, Qi Chen, Zijian Hong, Ren-Gen Xiong, Xuegong Yu, Lijian Zuo, Hongzheng Chen

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Design of a Novel W-Sinker RF LDMOS by Xiangming Xu, Han Yu, Jingfeng Huang, Chun Wang, Wei Ji, Zhengliang Zhou, Ying Cai, Yong Wang, Pingliang Li, Peng-Fei Wang, David Wei Zhang

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Design and Study of a Novel P-Type Junctionless FET for High Performance of CMOS Inverter by Bin Wang, Ziyuan Tang, Yuxiang Song, Lu Liu, Weitao Yang, Longsheng Wu

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Analysis of thermal effects according to channel and drain contact metal distance by Do Gyun An, Un Hyun Lim, Young Suh Song, Hyunwoo Kim, Jang Hyun Kim

“…Unlike conventional planar metal-oxide-semiconductor field-effect transistors (MOSFET), multi-gate devices such as fin field-effect transistors (FinFET) suffer from serious electrical performance issues due to the self-heating effect (SHE) because the channel is surrounded by the gate dielectric. …”
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