Devices for express diagnostics of power semiconductor devices and semiconductor converters by E. B. Koroleva, S. M. Kurmashev, K. K. Kim, A. A. Tkachuk, A. A. Kuznetsov

“…The method is proposed for determining potentially unreliable power semiconductor devices in group connections based on the results of analyzing the distribution of reverse currents in parallel branches, which made it possible to create a series of devices for diagnosing power semiconductor devices in converters, both with and without communication resistors. …”
Get full text

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit by Nesa Abedi Rik, Ali. A. Orouji, Dariush Madadi

Subjects: Get full text

Thermal analysis of onboard front-end AC/DC converter for EV using advanced semiconductor devices by Kanimozhi Gunasekaran, Ravi Samikannu

Subjects: Get full text

2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates by Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson, Md Abdullah-Al Mamun, Abdullah Al Mamun Mazumder, Shubhra S. Pasayat, Asif Khan, Chirag Gupta

Subjects: Get full text

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices by Yunwei Ma, Yuan Qin, Matthew Porter, Joseph Spencer, Zhonghao Du, Ming Xiao, Boyan Wang, Yifan Wang, Alan G. Jacobs, Han Wang, Marko Tadjer, Yuhao Zhang

Subjects: Get full text

A lightweight multi scale fusion network for IGBT ultrasonic tomography image segmentation by Meng Song, Zhaoba Wang, Youxing Chen, Ya Li, Yong Jin, Bei Jia

“…Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial power semiconductor device, and the integrity of its internal structure directly influences both its electrical performance and long-term reliability. …”
Get full text

EV Hybrid Battery With Integrated Multilevel Neutral-Point-Clamped Interfacing and Lossless Intermodule State-of-Charge Balancing by Gabriel Garcia-Rojas, Sergio Busquets-Monge, Alber Filba-Martinez, Turev Sarikurt, Salvador Alepuz, Josep Bordonau

“…Overall, the proposed approach enables a modular and scalable design of the energy storage system for a wide range of electric vehicles, from only two different standard battery modules and a standard power semiconductor device, while optimizing the battery size for any given battery power and energy specification. …”
Get full text

A fault‐diagnosis and tolerant control technique for five‐level cascaded H‐bridge inverters by Pavan Mehta, Subhanarayan Sahoo, Mayank Kumar

“…The consequences of faults increase as the number of power semiconductor devices increases and may lead to serious damage to the overall system. …”
Get full text

ESTIMATION OF THERMAL PARAMETERS OF POWER BIPOLAR TRANSISTORS BY THE METHOD OF THERMAL RELAXATION DIFFERENTIAL SPECTROMETRY by V. S. Niss, A. S. Vaskou, A. S. Turtsevich, A. F. Kerentsev, V. K. Kononenko

“…Method of thermal relaxation differential spectrometry allows effectively control the distribution of heat flow in high-power semiconductor devices, which is important for improving the design, improve the quality of landing crystals of power electronics products to reduce overheating.…”
Get full text