IGBTs: Concept, Development and New Structures by Florin Udrea

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Design and implementation of a 1.65~3 GHz 500 watts power amplifier by Xue Xin, Dong Liang, Wu Jiaqian

Subjects: “…gan power device…”
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Study on Operating Characteristic of the New Type Wind Power Device based on Improved CVT Mechanism by Zhu Xia

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Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry by Jaesun Kim, Seungyoung Lim, Gyeong Eun Choi, Jung-ki Park, Ho-Young Cha, Cheol-Ho Kwak, Jinhong Lim, Youngboo Moon, Jung-Hoon Song

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Impact of Parameter Uncertainties on Power Electronic Device Lifetime Predictions by Faezeh Kardan, Aditya Shekhar, Pavol Bauer

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High-power DC-DC converter based on SiC power device by MA Hou-cheng, ZHOU Xiao-min, GAO Da-wei

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Research on the differences of RF port simulation and test of X-band power device package by Yan Huizeng, Shi Mengqiao, Zhou Hao, Chen Huanbei

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Thermal resistance research of power devices based on structural function curve correction method by WANG Yongzhi, ZHOU Wei, WEI Xiaohui, ZHOU Longfei, LIU Hongwei, GUO Weili

Subjects: “…power device…”
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A Versatile Switched-Mode Large-Signal GaN-Based Low-Distortion Arbitrary Waveform Generator by Ignacio Alvarez-Gariburo, Hector Sarnago, Jose M. Burdio, Oscar Lucia

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Research on Fault Prediction of Power Devices in Rod Control Power Cabinets Based on BiTCN-Attention Transfer Learning Model by Zhi Chen, Liqi Ye, Yifan Jian, Meiyuan Chen, Yuan Min

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Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices by Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao

Subjects: “…Cascode GaN HEMT power device…”
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Research on Minimum Switch Loss Modulation Strategy of ANPC by HAO Qi, FENG Xiao-yun

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Research on advanced interconnection processes for SiC power device by DU Longchun, HE Yong, LIU Hongwei, LIU Xiaopeng

Subjects: “…silicon carbide power device…”
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Accelerated TLPD bonding of reliable IMCs micro joints using Cu–8Ni substrate under thermal gradient: Experiments and theoretical calculations by Yanqing Lai, Mingjie Wang, Donghui Zheng, Meiping Liu, Bao Chen, Jinmei Lv, Ning Zhao

Subjects: “…Power device packaging…”
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Premium Power Service for Custom Power Devices Based on Trial-Purchase Model by Ling Pan, Bing Shen, Peng Zhang, Xiaofeng Zou, Qian Feng

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Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment by Woong Kwon, Yuta Itoh, Atsushi Tanaka, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

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A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings by Tejender Singh Rawat, Chia-Lung Hung, Yi-Kai Hsiao, Wei-Chen Yu, Surya Elangovan, Wei-Ting Lin, Yi-Rong Lin, Kai-Lin Yang, Nien-Yi Jan, Yung-Hui Li, Hao-Chung Kuo

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Perspective on vertical Ga2O3 power MOSFETs utilizing current blocking layer technology by Ke Zeng

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Fast Engineering Method for Power Device Lifetime Evaluation Based on Power Cycling Test by Hu ZHANG

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Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching by Hiroki Toyoda, Woong Kwon, Hirotaka Watanabe, Ryoko Tsukamoto, Yuta Furusawa, Yuta Itoh, Yoshio Honda, Hiroshi Amano

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