Recent advances in diamond MOSFETs with normally off characteristics by Mingkun Li, Xueqia Zhang, Shuopei Jiao, Yanrong Wang, Shuhua Wei, Jiang Yan, Jing Zhang, Xufang Zhang

“…In this work, we summarized recent advances to achieve normally off features for diamond MOSFETs, including the partial surface modification or using some specific insulator materials on H-diamond surfaces, the oxidation of the silicon terminated (Si-) diamond, and the inversion-type p-channel diamond MOSFETs on hydroxyl terminated (OH-) diamond. …”
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