Characteristics of Nanocrystallite-CdS Produced by Low-Cost Electrochemical Technique for Thin Film Photovoltaic Application: The Influence of Deposition Voltage by Obi Kingsley Echendu, Francis Birhanu Dejene, Imyhamy Mudiy Dharmadasa, Francis Chukwuemeka Eze

“…The two-electrode system used provides a relatively simple and cost-effective approach for large-scale deposition of semiconductors for solar cell and other optoelectronic device application. Five CdS thin films were deposited for 45 minutes each at different cathodic deposition voltages in order to study their properties. …”
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Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy by K. Hiruma, K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, S. Fujisawa, S. Hara, J. Motohisa, T. Fukui

“…The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.…”
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Recent Advances in Graphene-Assisted Nonlinear Optical Signal Processing by Jian Wang, Xiao Hu

“…So far, the main focus has been on graphene based photonics and optoelectronics devices. Due to the linear band structure allowing interband optical transitions at all photon energies, graphene has remarkably large third-order optical susceptibility χ(3), which is only weakly dependent on the wavelength in the near-infrared frequency range. …”
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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

“…Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.…”
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Effect of Deoxycholic Acid on the Performance of Liquid Electrolyte Dye-Sensitized Solar Cells Using a Perylene Monoimide Derivative by Ganesh D. Sharma, Rajnish Kurchania, Richard J. Ball, Mahesh S. Roy, John A. Mikroyannidis

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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

“…Implementing transition metal nitride (TM-nitride) layers by epitaxy into group-III nitride semiconductor layer structures may solve substantial persisting problems for electronic and optoelectronic device configurations and subsequently enable new device classes in the favorable nitride semiconductor family. …”
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Effects of Controlling the AZO Thin Film's Optical Band Gap on AZO/MEH-PPV Devices with Buffer Layer by Jaehyoung Park, Ki-Chang Jung, Ari Lee, Hyojung Bae, Daehwa Mun, Jun-Seok Ha, Young-Bu Mun, E. M. Han, Hang-Ju Ko

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