Investigation into the Pore Structure and Multifractal Characteristics of Shale Reservoirs through N2 Adsorption: An Application in the Triassic Yanchang Formation, Ordos Basin, Ch... by Zhikai Liang, Zhenxue Jiang, Zhuo Li, Fenglin Gao, Xiaoqing Liu

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Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb2S3 heterojunction by Xiaojuan Lian, Shiyu Li, Jiyuan Jiang, Wen Huang, Nan He, Xiaoyan Liu, Jie Wu, Zhou Wang, Gangyi Zhu, Lei Wang

“…The device demonstrates superior performance, including a responsivity of 125 A W ^−1 , quantum efficiency of 1.36 × 10 ^4 %, and detectivity of 2.25 × 10 ^9 Jones, offering a pathway to next-generation optoelectronic chips.…”
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Insulator–metal transition in VO2 film on sapphire studied by broadband dielectric spectroscopy by Arsenii A. Gavdush, Vladislav A. Zhelnov, Kirill B. Dolganov, Alexander A. Bogutskii, Sergey V. Garnov, Maria G. Burdanova, Dmitry S. Ponomarev, Qiwu Shi, Kirill I. Zaytsev, Gennadii A. Komandin

“…Abstract Vanadium dioxide ( $$\hbox {VO}_2$$ ) is a favorable material platform of modern optoelectronics, since it manifests the reversible temperature-induced insulator-metal transition (IMT) with an abrupt and rapid changes in the conductivity and optical properties. …”
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Nonlocal Huygens’ meta-lens for high-quality-factor spin-multiplexing imaging by Jin Yao, Yubin Fan, Yunhui Gao, Rong Lin, Zhihui Wang, Mu Ku Chen, Shumin Xiao, Din Ping Tsai

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High-performance hysteresis-free perovskite transistors through anion engineering by Huihui Zhu, Ao Liu, Kyu In Shim, Haksoon Jung, Taoyu Zou, Youjin Reo, Hyunjun Kim, Jeong Woo Han, Yimu Chen, Hye Yong Chu, Jun Hyung Lim, Hyung-Jun Kim, Sai Bai, Yong-Young Noh

“…Abstract Despite the impressive development of metal halide perovskites in diverse optoelectronics, progress on high-performance transistors employing state-of-the-art perovskite channels has been limited due to ion migration and large organic spacer isolation. …”
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Oscillatory mechanoluminescence of Mn2+-doped SrZnOS in dynamic response to rapid compression by Hao Wang, Tingting Zhao, Mei Li, Junlong Li, Ke Liu, Shang Peng, Xuqiang Liu, Bohao Zhao, Yanlong Chen, Jiao An, Xiaohui Chen, Sheng Jiang, Chuanlong Lin, Wenge Yang

“…The present work uncovers the temporal characteristics of self-recoverable ML and provides insight into understanding the rate-dependent ML kinetics in the mechanical-photon energy conversion, conducive to the design of ML-based optoelectronic devices.…”
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Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method by Chengming Wei, Jiabao Liu, Xinru Lan, Cheng Yang, Shuiping Huang, Dongdong Meng, Zhengwei Chen, Hongguang Duan, Xu Wang

“…Our findings suggest that the GeO2 thin film is a candidate material for optoelectronic device applications and will provide a facile and innovative strategy to develop the solar-blind photodetector.…”
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An Investigation of Infrared Small Target Detection by Using the SPT–YOLO Technique by Yongjun Qi, Shaohua Yang, Zhengzheng Jia, Yuanmeng Song, Jie Zhu, Xin Liu, Hongxing Zheng

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Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination by Zhiqi Li, Qi Wei, Yu Wang, Cong Tao, Yatao Zou, Xiaowang Liu, Ziwei Li, Zhongbin Wu, Mingjie Li, Wenbin Guo, Gang Li, Weidong Xu, Feng Gao

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Structural, electronic, mechanical, optical and magnetic properties of RhNbZ (Z = Li, Si, As) Half-Heusler compounds: a first-principles study by Adem Beriso Bejo, Megersa Wodajo Shura, Kumneger Tadele, Mesfin Asfaw Afrassa, Fekadu Tolessa Maremi

“…Results from these properties calculations reveal that both absorption coefficient and optical conductivity have maximum values whereas electron energy loss has minimum value in the lower energy ranges which show that the materials under our study can be considered as potential candidates for optoelectronic applications. From magnetic property calculations, RhNbSi is predicted to be nonmagnetic material but RhNbLi and RhNbAs have magnetic nature.…”
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Biomechanics Parameters of Gait Analysis to Characterize Parkinson’s Disease: A Scoping Review by Michela Russo, Marianna Amboni, Noemi Pisani, Antonio Volzone, Danilo Calderone, Paolo Barone, Francesco Amato, Carlo Ricciardi, Maria Romano

“…The main findings of our review highlighted the use of optoelectronic systems for recording kinematic parameters and force plates for measuring kinetic parameters, due to their high accuracy. …”
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DAShip: A Large-Scale Annotated Dataset for Ship Detection Using Distributed Acoustic Sensing Technique by Wenjin Huang, Shaoyi Chen, Yichang Wu, Ruihua Li, Tianrui Li, Yihua Huang, Xiaochun Cao, Zhaohui Li

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Uniaxial strain tuning of charge modulation and singularity in a kagome superconductor by Chun Lin, Armando Consiglio, Ola Kenji Forslund, Julia Küspert, M. Michael Denner, Hechang Lei, Alex Louat, Matthew D. Watson, Timur K. Kim, Cephise Cacho, Dina Carbone, Mats Leandersson, Craig Polley, Thiagarajan Balasubramanian, Domenico Di Sante, Ronny Thomale, Zurab Guguchia, Giorgio Sangiovanni, Titus Neupert, Johan Chang

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VP-SFDA: Visual Prompt Source-Free Domain Adaptation for Cross-Modal Medical Image by Yixin Chen, Yan Wang, Zhaoheng Xie

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Unraveling Abnormal Thermal Quenching of Sub‐Gap Emission in β‐Ga2O3 by Zhengpeng Wang, Fei Tang, Fang‐Fang Ren, Hongwei Liang, Xiangyuan Cui, Shijie Xu, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye

“…The enhanced STEs emission with distinguished NTQ effect strengthens evidence that the stable polarons inherently limit the transport of holes in Ga2O3, and also support the potential of Ga2O3 materials for the development of UV optoelectronics.…”
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Chemical Pressure-Induced enhancement of electrochemical performance in Ni1-X CuxTe2 (X = 0 and 0.10) layered compounds by Rajkumar Sokkalingam, Manikandan Krishnan, Jesman Sthevan Kovil Pitchai, Sivakumar Periyasamy, Arjun Kumar Bojarajan, Arumugam Sonachalam, Sambasivam Sangaraju

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Nanoscale ultrafast dynamics in Bi2Te3 thin film by terahertz scanning near-field nanoscopy by Ziyu Huang, Jing Li, Peiyan Li, Lin Du, Mingcong Dai, Jiahua Cai, Zejun Ren, Tianxiao Nie, Xiaojun Wu

“…Summary: Ultrafast laser interactions with topological insulators (TIs) have garnered tremendous interest for understanding light-matter interactions and developing optoelectronic devices across visible to terahertz (THz) regions owning to their high carrier mobility and sensitivity to electric fields. …”
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Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors by Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan

“…Overall, the strategy presented here is effective for preparing a-IGTO TFTs with enhanced stability for potential applications in future optoelectronic displays.…”
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A comprehensive DFT/TDDFT investigation into the influence of electron acceptors on the photophysical properties of ullazine-based D-π-A-π-A photosensitizers by Jing Huang, Zihao Li, Lei Yang, Rongfang Hu, Guoyu Shi

“…Notably, HJ19 (A1 for BTD, A2 for CSSH) and HJ20 (A1 for difluorosubstituted BTD, A2 for CSSH) dyes demonstrate optimal optoelectronic properties, exhibiting redshifted absorption wavelengths by more than 79 nm and enhanced maximum absorption efficiencies by more than 40% with those of the YZ7 sensitizer.…”
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Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

“…While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. …”
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