Showing 21 - 40 results of 42 for search '"nanoelectronics"', query time: 0.03s Refine Results
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    Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments by Khalil Tamersit, Abdellah Kouzou, José Rodriguez, Mohamed Abdelrahem

    Published 2024-12-01
    “…These findings position the GAA-VGD TMD FET as a promising candidate for advanced radiation-hardened nanoelectronics.…”
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  4. 24

    Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design by Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan

    Published 2020-01-01
    “…The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. …”
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    Unveiling polyoxometalate redox properties at the nanoscale by Volatron, Florence, Izzet, Guillaume, Vuillaume, Dominique,  Proust, Anna

    Published 2024-11-01
    “…As the missing link between extended oxides, commonly found in microelectronics, and conventional organic or organometallic molecules, POMs have attracted ever-increasing interest in the field of nanoelectronics. They hold promise as charge storage nodes in multilevel nonvolatile memories and resistive switching devices, areas of interest currently boosted by the development of neuromorphic computing. …”
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  8. 28

    Nitrogen-carbon nanotubes as a basis for a new type of semiconductor materials for electronics devices by Irina V. Zaporotskova, Sergey V. Boroznin, Natalia P. Boroznina, Evgeniy S. Dryuchkov, Kseniya Yu. Verevkina, Yulia V Butenko, Pavel A. Zaporotskov, Lev V. Kozhitov, Alena V. Popkova, Aleksandr D. Grigoriev

    Published 2024-12-01
    “…The results are of utmost importance for the design and fabrication of components and units for nanoelectronics and microsystems: our theoretical study has confirmed the possibility to control the refraction index and conductivity of media by implementing a carbon-for-nitrogen substitution reaction to various concentrations. …”
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    Metrological studies of the characteristics of multilayer surface coatings using synchrotron radiation by A. S. Sigov, O. A. Minaeva, S. I. Anevsky, A. M. Lebedev, R. V. Minaev

    Published 2021-03-01
    “…It plays an important role in nanoelectronics metrological base. The main research were carried out at electron storage rings «Siberia-1» (Kurchatov Institute) and MLS (PTB, Berlin) with low electron energy, in a wide wavelength range, including visible range, AUV, VU, EUV and to exclude the X-ray radiation influence. …”
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  12. 32

    Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

    Published 2025-01-01
    “…The engineering of Schottky barrier height (SBH) at source/drain (S/D) contacts is a crucial technology in the next generation nanoelectronics. Recently, amorphous indium gallium zinc oxide (a-IGZO) has gained prominence for its application to stackable 3-dimensional (3D) dynamic random-access memory (DRAM) due to its ultra-low off-current and low-temperature fabrication. …”
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    Chemical Functionalization Effects on Cubane-Based Chain Electronic Transport by Konstantin P. Katin, Mikhail M. Maslov

    Published 2015-01-01
    “…Therefore it has become possible to tune electronic properties of the cubane-based one-dimensional oligomers by the functionalization for nanoelectronic applications.…”
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    Synthetic Strategies and Applications of GaN Nanowires by Guoquan Suo, Shuai Jiang, Juntao Zhang, Jianye Li, Meng He

    Published 2014-01-01
    “…GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. …”
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    Two-Dimensional Ferroelectric Materials: From Prediction to Applications by Shujuan Jiang, Yongwei Wang, Guangping Zheng

    Published 2025-01-01
    “…The progress in theoretical and experimental research could lead to the discovery and design of next-generation nanoelectronic and optoelectronic devices, facilitating the applications of 2D ferroelectric materials in emerging advanced technologies.…”
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    Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique by Toufik Bentrcia, Fayçal Djeffal, Elasaad Chebaki

    Published 2017-11-01
    “…Therefore, this study may provide more insights regarding the investigation of surrogate modelling tools in the field of deep nanoscale devices especially with the intractable mission of developing physical based models at this scale for nanoelectronic simulators.…”
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    STRENGTHENING THE RESEARCH OF KEY ENABLING TECHNOLOGIES FOR NEW INNOVATIONS by Sanja Tišma, Karolina Horvatinčić, Iva Tolić, Anamarija Farkaš

    Published 2019-11-01
    “… The development of science and technology in recent times is hosting major changes with the emergence of new key concepts, e.g. nanotechnology, micro nanoelectronic, etc. Technologies are changing the way in which society operates and there is a need to ensure that they are used in a best possible way. …”
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    STRENGTHENING THE RESEARCH OF KEY ENABLING TECHNOLOGIES FOR NEW INNOVATIONS by Sanja Tišma, Karolina Horvatinčić, Iva Tolić, Anamarija Farkaš

    Published 2019-11-01
    “… The development of science and technology in recent times is hosting major changes with the emergence of new key concepts, e.g. nanotechnology, micro nanoelectronic, etc. Technologies are changing the way in which society operates and there is a need to ensure that they are used in a best possible way. …”
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    Article
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    Tailoring the Anomalous Hall Effect in van der Waals Ferromagnet Fe3GeTe2 by WU Kaile, WANG Junshan, JIANG Jiaolin, CHAI Qian, WANG Qin, SANG Shengbo, GE Yang

    Published 2025-01-01
    “…[Purposes] The intrinsic magnetic moments of magnetic materials can lead to anomalous Hall effects, and the Hall resistance can be significantly reduced, thus improving the heat loss in micro- and nanoelectronic devices. Two-dimensional van der Waals magnetic materials have shown fascinating natural ferromagnetic properties at the atomic level, which has great potential in the fields of low power spintronics, quantum computing, and optical communication. …”
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