Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping by Tariq Jamil, Abdullah Al Mamun Mazumder, Mafruda Rahman, Muhammad Ali, Jingyu Lin, Hongxing Jiang, Grigory Simin, Asif Khan

“…In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. …”
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Material Properties of n‐Type β‐Ga2O3 Epilayers with In Situ Doping Grown on Sapphire by Metalorganic Chemical Vapor Deposition by Fu‐Gow Tarntair, Chih‐Yang Huang, Siddharth Rana, Kun‐Lin Lin, Shao‐Hui Hsu, Yu‐Cheng Kao, Singh Jitendra Pratap, Yi‐Che Chen, Niall Tumilty, Po‐Liang Liu, Ray‐Hua Horng

“…Abstract In this study, in situ, Si‐doped heteroepitaxial Ga2O3 layers are grown on c‐plane sapphire by metalorganic chemical vapor deposition. The X‐ray diffraction peaks of the doped Ga2O3 epilayers shows ß‐phase of Ga2O3 ,and full width at half maximum of Ga2O3 crystallinity is decreased at a Tetraethoxysilane (TEOS) molar flow rate of 2.23 × 10−7 mol min−1 but increased with higher flow rates. …”
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Spatially Resolved Cathodoluminescence in the Vicinity of Defects in the High-Efficiency InGaN/GaN Blue Light Emitting Diodes by Manh-Ha Doan, Jaejin Lee

“…In addition to the standard 447 nm blue emission from the InGaN/GaN multiple quantum wells, a high-energy shoulder is clearly observed in cathodoluminescence spectra of the high-efficiency InGaN/GaN blue light emitting diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Monochromatic cathodoluminescence images of the samples measured at low temperature reveal a competition between the two emissions in the vicinity of the dislocations. …”
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Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes by Hsu-Hung Hsueh, Sin-Liang Ou, Chiao-Yang Cheng, Dong-Sing Wuu, Ray-Hua Horng

“…InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. …”
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Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation by Matthias Daeumer, Jae-Hyuck Yoo, Zhiyu Xu, Minkyu Cho, Marzieh Bakhtiary-Noodeh, Theeradetch Detchprohm, Yuxuan Zhang, Vijay Gopal Thirupakuzi Vangipuram, Vishank Talesara, Yibo Xu, Edward Letts, Daryl Key, Tian T. Li, Qinghui Shao, Russell Dupuis, Shyh-Chiang Shen, Wu Lu, Hongping Zhao, Tadao Hashimoto, Ted A. Laurence

“…Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. …”
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Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire by Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng

“…In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. …”
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Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy by Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen

“…The results are likely transferable to further physical and chemical vapor deposition methods, such as conventional and hybrid MBE, pulsed laser deposition, mist-, or metalorganic chemical vapor deposition.…”
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