Radiation Damage in Electronic Memory Devices by Irfan Fetahović, Milić Pejović, Miloš Vujisić

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Inkjet‐Printed Phase Change Memory Devices by Hanglin He, Dhananjeya Kumaar, Kevin Portner, Till Zellweger, Florian M. Schenk, Simon Wintersteller, Vitor Vlnieska, Alexandros Emboras, Vanessa Wood, Maksym Yarema

“…In this paper, it is shown that functional PCM memory devices can be printed, proving low‐cost avenues for non‐silicon memory technologies. …”
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Multiferroic materials for sensors, transducers and memory devices (review article) by Zygmunt SUROWIAK, Dariusz BOCHENEK

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Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices by Fu-Chien Chiu

“…Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. …”
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Interfacial tuning of magnetic anisotropy for low-power spintronic memory devices by Astha Khandelwal, Suchit Kumar Jena, Lei Wan, Alan Kalitsov, Rajesh Vilas Chopdekar, Derek A. Stewart, Tiffany S. Santos, Bhagwati Prasad

“…Interfacial engineering of magnetic anisotropy is crucial for the development of low-power spintronic memory devices. In thin-film magnetic heterostructures, perpendicular magnetic anisotropy (PMA) supports high-density data storage by reducing device dimensions while maintaining thermal stability and data retention, whereas voltage-controlled magnetic anisotropy (VCMA) facilitates energy-efficient data writing. …”
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Germanium Nanocrystals Embedded in Silicon Dioxide for Floating Gate Memory Devices by A. Bag, R. Aluguri, S.K. Ray

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Formal description model and conditions for detecting linked coupling faults of the memory devices by V. N. Yarmolik, D. V. Demenkovets, V. V. Petrovskaya, A. A. Ivaniuk

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PSEUDO-EXHAUSTIVE MEMORY DEVICES TESTING BASED ON MULTIPLE MARCH TESTS 1 by V. N. Yarmolik, I. Mrozek, B. A. Levantsevich

“…Methods for modern memory devices are analyzed. The validity of using pseudo-exhaustive tests to detect complex memory faults is shown. …”
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Investigation of solution-processed tungsten disulfide as switching layer in flexible resistive memory devices for performance and stability by Shalu Saini, Shree Prakash Tiwari

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Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes by Sheli Muzafe Reiss, Salma Khaldi, Omer Shoseyov, Shira Yochelis, Roie Yerushalmi, Yossi Paltiel

“…In this study, a 10 nm chiral magnetic memory device is introduced using a self‐assembly gold nano‐floret device. …”
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Principles design and applications of single electron transistors in memory devices logic gates neural networks and gas sensor by Abdelghaffar Nasri, Aimen Boubaker, Adel Kalboussi

“…It provides an in-depth discussion of the diverse applications of SETs in fields such as memory devices, logic gates, artificial neural networks, and gas sensors. …”
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Matrix-dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-oxide-semiconductor-based Nonvolatile Memory Device by Honghua Huang, Ying Zhang, Wenyan Wei, Ting Yu, Xingfang Luo, Cailei Yuan

“…The matrix-dependent strain distributions of Au and Ag nanoparticles in a metal-oxide-semiconductor based nonvolatile memory device are investigated by finite element calculations. …”
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Permanent Strain Engineering of Molybdenum Disulfide Using Laser-Driven Stressors for Energy-Efficient Resistive Switching Memory Devices by Heeyoon Jang, Seok-Ki Hyeong, Byeongjin Park, Tae-Wook Kim, Sukang Bae, Sung Kyu Jang, Yonghun Kim, Seoung-Ki Lee

“…These results emphasize the potential of strain engineering for advancing the performance and durability of next-generation memory devices.…”
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In Situ Thermal Decomposition of Potassium Borohydride for Borophene Synthesis and Its Application in a High-Performance Non-Volatile Memory Device by Qian Tian, Xinchao Liang, Maoping Xu, Yi Liu, Qilong Wu, Guoan Tai

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Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices by Yao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, Chien-Min Cheng, Hong-Xiang Huang, Kai-Chi Huang

“…Finally, the Cu/BST/TiN and Al/BST/TiN structures of the ferroelectric BST films RRAM devices exhibited good memory window properties, bipolar switching properties, and non-volatile properties for applications in non-volatile memory devices.…”
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Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites by Jaeho Shim, Jinseo Park, Seok-Ho Seo, Ju Hee You, Dong Ick Son

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Co3O4-graphene core-shell QDs-PMMA insulating polymer composites structured nonvolatile bistable memory devices by Jinseo Park, Jaeho Shim, Dong Ick Son

“…Nonvolatile hybrid inorganic/organic bistable memory devices fabricated utilizing Co3O4-graphene core-shell quantum dots (QDs) embedded in an insulating poly (methyl methacrylate) (PMMA) polymer matrix as active layer which were fabricated using a spin-coating technique. …”
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GeTe/Sb2Te3 Super‐Lattices: Impact of Atomic Structure on the RESET Current of Phase‐Change Memory Devices by Damien Térébénec, Françoise Hippert, Nicolas Bernier, Niccolo Castellani, Pierre Noé

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Inkjet‐printed reconfigurable and recyclable memristors on paper by Jinrui Chen, Mingfei Xiao, Zesheng Chen, Sibghah Khan, Saptarsi Ghosh, Nasiruddin Macadam, Zhuo Chen, Binghan Zhou, Guolin Yun, Kasia Wilk, Georgios Psaltakis, Feng Tian, Simon Fairclough, Yang Xu, Rachel Oliver, Tawfique Hasan

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Exotic Photothermal Response in Ti‐Based MXene Optoelectronic Devices by Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi

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