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    Upaya meningkatkan hasil belajar siswa dengan model pembelajaran problem based learning melalui tatap muka terbatas pada materi persamaan kuadrat di SMK by Devi Noviyati

    Published 2022-12-01
    “…Namun setelah dilakukan penelitian tindakan yaitu dengan model pembelajaran berbasis masalah melalui pertemuan terbatas tatap muka, siswa terlihat lebih antusias dan selalu menjawab pertanyaan yang diberikan guru karena siswa sudah memahami materi pelajaran tentang kuadrat. persamaan. Siswa juga tidak kesulitan mengerjakan tugas yang diberikan dengan benar. …”
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    Preparation and Investigation of a Novel Organic Polymer Consisting of 2,2,6,6-Tetramethylpiperidine-N-oxy as a Cathode Active Material in Li-Ion Batteries by Emre Biçer, Atilla Öktemer

    Published 2013-01-01
    “…An investigation on electrochemical and battery properties of this material as a cathode active material in different electrolyte salts was conducted. …”
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    Continuing exposure to disadvantageous material and perceived economic factors on self-rated health in different life stages: fixed effects analyses with data from the German Socioeconomic Panel by Tobias Rähse, Matthias Richter, Anja Knöchelmann

    Published 2025-02-01
    “…Examining the relevance of these accumulation and adaptation processes, the present study analyses continuing exposure to various material and perceived economic factors on self-rated health (SRH) across different life stages. …”
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    THEORETICAL STUDIES ON THE MAGNETIC, ELECTRICAL, AND OPTICAL PROPERTIES OF LEAD-FREE FERROELECTRIC Ba(Zr\(_{0.2}\)Ti\(_{0.8}\)O\(_3\))  MATERIALS WITH MANGANESE DOPING by Tien Lam Vu, Hoang Thoan Nguyen, Huu Lam Nguyen, Ngoc Trung Nguyen, Quoc Van Duong, Duc Dung Dang

    Published 2024-09-01
    “… In this study, we conducted a density functional theory investigation of the structural, electronic, magnetic, and optical properties of manganese-doped lead-free ferroelectric Ba(Zr0.2Ti0.8)O3 (BZT) materials. The electronic structure calculations revealed that pristine BZT material behaves as a p-type semiconductor with direct and indirect bandgaps of 3.18 eV and 2.08 eV, respectively. …”
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