A Theory of Bubbles in Ion-implanted Structures by W. Kinsner

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Nanoclustering in Silicon Induced by Oxygen Ions Implanted by D. Manno, A. Serra, E. Filippo, M. Rossi, G. Quarta, L. Maruccio, L. Calcagnile

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Mechanical and Structural Properties of Fluorine-Ion-Implanted Boron Suboxide by Ronald Machaka, Bonex W. Mwakikunga, Elayaperumal Manikandan, Trevor E. Derry, Iakovos Sigalas, Mathias Herrmann

“…Implications of these observations in the creation of amorphous near-surface layers by high-dose ion implantation are discussed in this paper.…”
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p-Type Quasi-Mono Silicon Solar Cell Fabricated by Ion Implantation by Chien-Ming Lee, Sheng-Po Chang, Shoou-Jinn Chang, Ching-In Wu

“…Here, we evaluate the application of an advanced solar cell process featuring a novel method of ion implantation on p-type quasi-mono silicon wafer. The ion implantation process has simplified the normal industrial process flow by eliminating two process steps: the removal of phosphosilicate glass (PSG) and the junction isolation process that is required after the conventional thermal POCl3 diffusion process. …”
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Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation by Volker Häublein, Heiner Ryssel, Lothar Frey

“…This paper shows that charge exchange events and dissociation reactions of ions may impact the purity of the ion beam in ion implantation, leading to contamination of the implanted target. …”
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A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping by F. Ruffino, L. Romano, E. Carria, M. Miritello, M. G. Grimaldi, V. Privitera, F. Marabelli

“…In order to promote the As incorporation in the nanoclusters for an effective doping, an approach based on ion implantation and nanosecond laser irradiation was investigated. …”
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Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation by Jhovani Bornacelli, Jorge Alejandro Reyes Esqueda, Luis Rodríguez Fernández, Alicia Oliver

“…We studied the photoluminescence (PL) of Si nanocrystals (Si-NCs) embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO2 achieving a robust and better protected system. …”
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Fabrication of TiO2 Nanofilm Photoelectrodes on Ti Foil by Ti Ion Implantation and Subsequent Annealing by Yichao Liu, Feng Ren, Guangxu Cai, Mengqing Hong, Wenqing Li, Xiangheng Xiao, Wei Wu, Changzhong Jiang

“…The TiO2 photoelectrodes fabricated on the substrate of Ti foils by Ti ions implantation and subsequent annealing at different temperatures were applied for water splitting. …”
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Preparation and Properties of Ag-Containing Diamond-Like Carbon Films by Magnetron Plasma Source Ion Implantation by K. Baba, R. Hatada, S. Flege, W. Ensinger

“…The samples were prepared by a process combining acetylene plasma source ion implantation (high-voltage pulses of −10 kV) with reactive magnetron sputtering of an Ag disc. …”
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Crack resistance of carbonized layer of multilayer polyurethane with nanofillers. Combination of casting, solution, carbonization by ion implantation technologies by R. I. Izyumov, A. L. Svistkov, V. S. Chudinov, I. V. Osorgina, A. G. Pelevin

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Effects of single- and multi-energies ion irradiations on clustering in an Fe–Mn–Ni–Si alloy by Yang Kong, Yue Sun, Shenbao Jin, Gang Sha

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Effects of metal ion implantation (Fe, Ti, Zn and Zr) on mechanical properties, corrosion resistance and biocompatibility of WE43 Mg alloy by Lianhui Li, Zhiqiang Zhang, Dechuang Zhang, Fugang Qi, Yilong Dai, Wenwen Wei, Xiaoping Ouyang

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Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment by Woong Kwon, Yuta Itoh, Atsushi Tanaka, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano

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NV center creation in diamond by local CW laser irradiation of shallow implanted nitrogen by Alexius Enke, Nicole Raatz, Jan Meijer, Ralf Wunderlich

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A Multifunctional Cobalt‐Containing Implant for Treating Biofilm Infections and Promoting Osteointegration in Infected Bone Defects Through Macrophage‐Mediated Immunomodulation by Nongyang Yan, Hao Zhou, Penghe Jin, Tengfei Li, Qi Liu, Hao Ning, Zhixin Ma, Linfei Feng, Tao Jin, Youwen Deng, Zhengwei Wu

Subjects: “…plasma immersion ion implantation (PIII)…”
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Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations by Stephen A. Mancini, Seung Yup Jang, Zeyu Chen, Dongyoung Kim, Alex Bialy, Balaji Raghotamacher, Michael Dudley, Nadeemullah Mahadik, Robert Stahlbush, Mowafak Al-Jassim, Woongje Sung

“…Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temperature (25°C) and elevated temperatures (600°C) in order to monitor subsequent lattice damage. …”
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On estimation of maximal value of full diffusion time of infused and implanted dopants by E. L. Pankratov

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The influence of surface modification on the morphological characteristics and microhardness of HVG steel by A. A. Teploukhov, N. A. Semenyuk, A. E. Teryokhina, S. I. Motovilov, D. V. Skakun

Subjects: “…ion implantation…”
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Effect of microstructure and neutron irradiation defects on deuterium retention in SiC by Alex Leide, Weicheng Zhong, Isabel Fernandez-Victorio, Isabel Fernandez-Victorio, Duc Nguyen-Manh, Duc Nguyen-Manh, Takaaki Koyanagi

“…Deuterium retention in neutron irradiated high purity SiC has been compared to different microstructures of non-irradiated high purity SiC using thermal desorption spectroscopy after gas charging and low energy ion implantation. Experimental results show lower deuterium retention in single crystal SiC than in polycrystal SiC indicating that grain boundaries are key trapping features in unirradiated SiC. …”
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Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone by Hideo Horibe, Yousuke Goto

“…Removal of B and P ion-implanted resists became difficult with increasing acceleration energy of ions at implantation. …”
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