Showing 1 - 16 results of 16 for search '"insulated gate bipolar transistor"', query time: 0.05s Refine Results
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    An Improved Prediction Model of IGBT Junction Temperature Based on Backpropagation Neural Network and Kalman Filter by Yu Dou

    Published 2021-01-01
    “…With the rapid development of emerging technologies such as electric vehicles and high-speed railways, the insulated gate bipolar transistor (IGBT) is becoming increasingly important as the core of the power electronic devices. …”
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    Article
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    Advanced Rectifier Technologies for Electrolysis-Based Hydrogen Production: A Comparative Study and Real-World Applications by Yan Gao, Xiongzheng Wang, Xin Meng

    Published 2024-12-01
    “…First, the topologies of three rectifiers typically employed in industry—24-pulse thyristor rectifiers, insulated gate bipolar transistor (IGBT) rectifiers, and 24-pulse diode rectifiers with multi-phase choppers—are described in detail. …”
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    Article
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    An Enhanced Inverter Controller for PV Applications Using the dSPACE Platform by M. A. Hannan, Z. Abd Ghani, A. Mohamed

    Published 2010-01-01
    “…The SPWM signals switch the insulated gate bipolar transistor (IGBT) to stabilize the 50-Hz sinusoidal AC output voltages of the inverter. …”
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    Article
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    SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm by Mohamed Baghdadi, Elmostafa Elwarraki, Naoual Mijlad, Imane Ait Ayad

    Published 2021-01-01
    “…In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. …”
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    Article
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    Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module by Dianhao Zhang, Xiao-guang Huang, Bin-liang Cheng, Neng Zhang

    Published 2020-12-01
    “…Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. …”
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    Article
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    The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module by Shengqi Zhou, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, Junke Wu

    Published 2012-01-01
    “…Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. …”
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    Article
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    A lightweight multi scale fusion network for IGBT ultrasonic tomography image segmentation by Meng Song, Zhaoba Wang, Youxing Chen, Ya Li, Yong Jin, Bei Jia

    Published 2025-01-01
    “…Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial power semiconductor device, and the integrity of its internal structure directly influences both its electrical performance and long-term reliability. …”
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    Article
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    Implementing Two Dimensions Decentralized Carrier Phase Shift Method for Multicell Serial-Parallel Inverters by Phu Cong Nguyen, Quoc Dung Phan, Tuyen Dinh Nguyen

    Published 2025-01-01
    “…The design of MMCs must ensure that the switching voltage is less than the switching voltage limit of the insulated gate bipolar transistor (IGBT), and that the 2D structure can easily adjust the voltage at each level by adding or removing several cells in series. …”
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    Transient analysis of temporary overvoltage and cable faults in underground medium voltage systems by Ricardo Manuel Arias Velásquez

    Published 2025-03-01
    “…We explore the effects on splices and terminals and discuss the use of insulated-gate bipolar transistors (IGBTs) in transformers, as well as the impact of cable configuration on circulating currents and ferroresonance. …”
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    Article
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    Multi-terminal flexible DC grid circuit breaker withstands multi-lightning strike analysis by Yutao Tang, Hongchun Shu, Kai He, Yue Dai, Yu Kuang, Yiming Han, Weijie Lou

    Published 2025-01-01
    “…During multi-lightning strikes, lightning intrusive waves pose a greater threat to the insulation of equipment such as hybrid DC fuses, fast mechanical switches, and insulated gate bipolar transistors. Therefore, this paper establishes a simulation model using the Real-Time Digital Simulator based on the model and parameters of the DCCB in the ± 500 kV Zhangbei HVDC project in China. …”
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    Article
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    Design and Implementation of universal converter using ANN controller by K. Suresh, E. Parimalasundar, A. Arunraja, V. Ellappan, Eshetu Tessema Ware

    Published 2025-01-01
    “…Abstract This paper details the hardware implementation of a Universal Converter controlled by an Artificial Neural Network (ANN), utilizing key components such as six Insulated Gate Bipolar Transistors (IGBTs), two inductors, and two capacitors for energy storage and voltage smoothing. …”
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    Energy-efficient and reliable dual closed-loop DC control system for intelligent electric vehicle charging infrastructure. by Jun Li, Wan Chen, Xiaoqiong Zhu, Baoguo Zang, Cong Zhang, Hengxiao Hu, Ming Zhang, Wenbao Lei

    Published 2024-01-01
    “…The research implements a three-level Pulse Width Modulation (PWM) rectifier with a diode-clamped topology and Insulated-Gate Bipolar Transistors (IGBTs), achieving a power factor of 0.99, a total harmonic distortion (THD) of 1.12%, and an efficiency of 95% through rigorous simulation. …”
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    Article
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    A novel pulse-current waveform circuit for low-energy consumption and low-noise transcranial magnetic stimulation by Xinhua Tan, Ao Guo, Jiasheng Tian, Yingwei Li, Yingwei Li, Jian Shi

    Published 2025-01-01
    “…Finally, four insulated-gate bipolar transistors, controlled by a series of PWM pulse sequences, generated the desired pulse-current duration and direction in the H-bridge circuit. …”
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    Article