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1
The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
Published 2024-12-01Subjects: Get full text
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2
3 kV monolithic bidirectional GaN HEMT on sapphire
Published 2025-01-01Subjects: Get full text
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3
Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility
Published 2025-01-01Subjects: “…AlGaN channel high electron mobility transistor…”
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