Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET by Hakkee Jung

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Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach by Ji Hwan Lee, Kihwan Kim, Kyungjin Rim, Soogine Chong, Hyunbo Cho, Saeroonter Oh

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Analysis of GAA Junction Less NS FET Towards Analog and RF Applications at 30 nm Regime by Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain

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SRAM and Mixed-Signal Logic With Noise Immunity in 3-nm Nano-Sheet Technology by Rajiv V. Joshi, J. Frougier, Alberto Cestero, Crystal Castellanos, Sudipto Chakraborty, Carl Radens, M. Silvestre, S. Lucarini, I. Ahsan, E. Leobandung

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Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology by Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu

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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

Subjects: “…Gate-all-around nanosheet transistor (GAA NSFET)…”
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