3 kV monolithic bidirectional GaN HEMT on sapphire by Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta

“…3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. …”
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A Comprehensive Examination of Bandgap Semiconductor Switches by S. Siva Subramanian, R. Saravanakumar, Bibhu Prasad Ganthia, S. Kaliappan, Surafel Mustefa Beyan, Maitri Mallick, Monalisa Mohanty, G. Pavithra

“…At this moment, titanium dioxide and gallium nitride are the most prospective semiconductor materials because of their great features, established technology, and enough supply of raw components. …”
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AlGaN/AlN heterostructures: an emerging platform for integrated photonics by Sinan Gündoğdu, Sofia Pazzagli, Tommaso Pregnolato, Tim Kolbe, Sylvia Hagedorn, Markus Weyers, Tim Schröder

“…Abstract We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. …”
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Design of Multijunction Photovoltaic Cells Optimized for Varied Atmospheric Conditions by C. Zhang, J. Gwamuri, R. Andrews, J. M. Pearce

“…Band gap engineering provides an opportunity to not only provide higher overall conversion efficiencies of the reference AM1.5 spectra but also customize PV device design for specific geographic locations and microenvironments based on atmospheric conditions characteristic to that particular location. Indium gallium nitride and other PV materials offer the opportunity for limited bandgap engineering to match spectra. …”
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Enhancing Carriers’ Confinement by Introducing BAlGaN Quantum Barriers for the Better Optoelectronic Performance of Deep UV LEDs by Jamshad Bashir, Muhammad Usman, Dmitri Sergeevich Arteev, Zoya Noor, Ahmed Ali

“…Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum content in quantum barriers (QBs), which results in a higher turn-on voltage. …”
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Simulation and Experimental Study of the Single-Pulse Femtosecond Laser Ablation Morphology of GaN Films by Mingyuan Wang, Tong Zhang, Yanping Yuan, Zhiyong Wang, Yanlei Liu, Lin Chen

“…Gallium nitride (GaN) exhibits distinctive physical and chemical properties that render it indispensable in a multitude of electronic and optoelectronic devices. …”
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Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S₂₂ and h₂₁: An Effective Machine Learning Approach by Zegen Zhu, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Jialin Cai

“…The device under test (DUT) is a 0.25-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) substrate, which has a large gate periphery of 1.5 mm. …”
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An Improved Topology of Isolated Bidirectional Resonant DC-DC Converter Based on Wide Bandgap Transistors for Electric Vehicle Onboard Chargers by Md. Tanvir Shahed, A. B. M. Harun-Ur Rashid

“…A 5 kW CLLL converter with an input range of 400–460 V direct current (DC) and an output range of 530–610 V DC, and a switching frequency of 1 MHz has been designed and investigated under various loading scenarios. Gallium nitride (GaN) switching device-based designs achieved the highest levels of efficiency among the switching devices. …”
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Room Temperature Gas Sensor Based on GaN/PANI Micro Composite with Ultrahigh NH3 Gas Sensibility by LIU Xiaoru, JIA Zhengyang, GUANG Juxu, HAN Dan, SANG Shengbo

“…[Purposes] This study is carriedout to discuss on the response of gallium nitride (GaN) and polyaniline (PANI) composites to ammonia (NH3) at room temperature. …”
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Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts by Brianna Klein, Andrew Allerman, Andrew Armstrong, Mary Rosprim, Colin Tyznik, Yinxuan Zhu, Chandan Joishi, Chris Chae, Siddharth Rajan

“…Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. …”
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Low Thermal Resistance of Diamond‐AlGaN Interfaces Achieved Using Carbide Interlayers by Henry T. Aller, Thomas W. Pfeifer, Abdullah Mamun, Kenny Huynh, Marko Tadjer, Tatyana Feygelson, Karl Hobart, Travis Anderson, Bradford Pate, Alan Jacobs, James Spencer Lundh, Mark Goorsky, Asif Khan, Patrick Hopkins, Samuel Graham

“…Abstract This study investigates thermal transport across nanocrystalline diamond/AlGaN (aluminum gallium nitride) interfaces, crucial for enhancing thermal management in AlGaN‐based electronic devices. …”
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Complex-Order Fractional Proportional&#x2013;Resonant Controller for High-Frequency Applications by Daniel Heredero-Peris, Macia Capo-Lliteras, Daniel Montesinos-Miracle, Joaquim Melendez-Frigola

“…A set of simulations and experimental results on a 3.6-kVA gallium nitride inverter is discussed. The proposed COFPR controller performs superiorly at high frequencies when the same gains for the controllers are used. …”
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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces by Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

“…Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO2), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiNx), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. …”
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Enhanced solar hydrogen production via reconfigured semi-polar facet/cocatalyst heterointerfaces in GaN/Si photocathodes by Wei Chen, Danhao Wang, Weiyi Wang, Xin Liu, Yuying Liu, Chao Wang, Yang Kang, Shi Fang, Xudong Yang, Wengang Gu, Dongyang Luo, Yuanmin Luo, Zongtao Qu, Chengjie Zuo, Yi Kang, Lin Cheng, Wensheng Yan, Wei Hu, Ran Long, Jr-Hau He, Kang Liang, Sheng Liu, Yujie Xiong, Haiding Sun

“…Here, we report a unique photoelectrode composed of reconfigured gallium nitride nanowire-on-silicon wafer loaded with Au nanoparticles as cocatalyst that achieved an impressive applied bias photon-to-current efficiency of 10.36% under AM 1.5G one sun illumination while exhibiting stable PEC hydrogen evolution over 800 h at a high current density. …”
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