The Acute effects of Talocrural MWM compared with the application of Soft-tissue of the plantarfascia on chronic Lateral Ankle Sprains for ankle Dorsiflexion R.O.M. by Peter Hempenstall, Brian O'Rourke

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Analytical subthreshold swing model of junctionless elliptic gate-all-around (GAA) FET by Hakkee Jung

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Rescue of common and rare exon 2 skipping variants of the GAA gene using modified U1 snRNA by Paolo Peruzzo, Natascha Bergamin, Martina Bon, Sara Cappelli, Alessandra Longo, Elisa Goina, Cristiana Stuani, Emanuele Buratti, Andrea Dardis

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SRAM and Mixed-Signal Logic With Noise Immunity in 3-nm Nano-Sheet Technology by Rajiv V. Joshi, J. Frougier, Alberto Cestero, Crystal Castellanos, Sudipto Chakraborty, Carl Radens, M. Silvestre, S. Lucarini, I. Ahsan, E. Leobandung

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HEMT Noise Modeling for D Band Low Noise Amplifier Design by Ao Zhang, Jianjun Gao

Subjects: “…GaAs…”
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Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr) by Yongrong Deng, Chunhong Zhang, Xinmao Qin, Wanjun Yan

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A Short Theoretical Note on Optical Absorption of Amorphous Gallium Arsenide in the Infrared Range by M. A. Grado-Caffaro, M. Grado-Caffaro

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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

Subjects: “…Gate-all-around nanosheet transistor (GAA NSFET)…”
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Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing by Deyan Dai, Hanqing Liu, Xiangjun Shang, Shizhuo Tan, Qiaozhi Zhang, Chengao Yang, Dongwei Jiang, Xiangbin Su, Haiqiao Ni, Zhichuan Niu

Subjects: “…InAs/GaAs quantum dots…”
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Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts by Souad Benykrelef, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, Zineb Benamara

Subjects: “…n-GaAs…”
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Investigating the effect of incident intensity on single-junction GaAs PV cells conversion efficiency at different temperatures by Junyue Zhang, Shunhua Wu, Jiachen Liu, Weizhou Huang, Lei Ling, Qingkai Meng, Rui Zhang, Lang Chen, Jiachen Zhang, Zhenfu Wang, Te Li

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Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

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W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function by Seong-Hee Han, Dong-Wook Kim

Subjects: “…GaAs pHEMT…”
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A Study on the Transversal Optical Mode in Amorphous Gallium Arsenide by M. A. Grado-Caffaro, M. Grado-Caffaro

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Influence of variation in indium concentration and temperature on the threshold current density in InxGa1-xAs/GaAs QD laser diodes by Zainab M. Alharbi, M.S. Al-Ghamdi

Subjects: “…InxGa1-xAs/GaAs QD laser diode…”
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