Experimental progress in freestanding oxide membranes designed by epitaxy by Varun Harbola, Ruijuan Xu, Seung Sae Hong

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Complex Nanostructures by Pulsed Droplet Epitaxy by Noboyuki Koguchi, Sergio Bietti, Claudio Somaschini, Stefano Sanguinetti

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Strain Programming of Oxygen Octahedral Symmetry in Perovskite Oxide Thin Films by Yunkyu Park, Seoung‐Hun Kang, Jeongkeun Song, Sang Woon Hwang, Shan Lin, Jong Mok Ok, Fazhi Yang, Hwangsun Kim, Andrew R. Lupini, Mina Yoon, Sangmoon Yoon, Hua Zhou, Ho Nyung Lee

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Unraveling a Rare Polygonal Gold–Pyrite Assemblage: Insights from the Lena Province, Bodaibo Mining District (Russia) by Isabella Pignatelli, Gaston Giuliani, Christophe Morlot, Louis-Dominique Bayle

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Enhanced Performance of High-Power InAs/GaAs Quantum Dot Lasers Through Indium Flushing by Deyan Dai, Hanqing Liu, Xiangjun Shang, Shizhuo Tan, Qiaozhi Zhang, Chengao Yang, Dongwei Jiang, Xiangbin Su, Haiqiao Ni, Zhichuan Niu

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Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si by Trevor R. Smith, Spencer McDermott, Vatsalkumar Patel, Ross Anthony, Manu Hedge, Sophie E. Bierer, Sunzhuoran Wang, Andrew P. Knights, Ryan B. Lewis

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Mid-Infrared High-Power InGaAsSb/AlGaInAsSb Multiple-Quantum-Well Laser Diodes Around 2.9 μm by Hongguang Yu, Chengao Yang, Yihang Chen, Jianmei Shi, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Enquan Zhang, Yu Zhang, Hao Tan, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu

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Epitaxial growth of transition metal nitrides by reactive sputtering by Florian Hörich, Christopher Lüttich, Jona Grümbel, Jürgen Bläsing, Martin Feneberg, Armin Dadgar, Rüdiger Goldhahn, André Strittmatter

Subjects: “…sputter epitaxy…”
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Impact of Buffer Layer on Electrical Properties of Bow-Tie Microwave Diodes on the Base of MBE-Grown Modulation-Doped Semiconductor Structure by Algirdas Sužiedėlis, Steponas Ašmontas, Jonas Gradauskas, Aurimas Čerškus, Aldis Šilėnas, Andžej Lučun

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High-Performance Dielectric Modulated Epitaxial Tunnel Layer Tunnel FET for Label-Free Detection of Biomolecules by Kunal Aggarwal, Avinash Lahgere

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Enantiospecific mirror-imaged growth in overlayers of enantiopure thiadiazole-[9]helicene on Au(111) without commensurability by Fumi Nishino, Keisuke Fukutani, Jonas Brandhoff, Marco Gruenewald, Elise Fuerch, Maximilian Schaal, Felix Otto, Daniel Stelter, Roman Forker, Zheng Zhang, Takashi Hirose, Torsten Fritz, Satoshi Kera

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Epitaxial growth of Pd clusters on N-doped Ag nanowires for oxygen reduction reaction by Qinhe Guan, Shiwei Sun, Xiaohang Ge, Fan Zhang, Lijie Qu, Chao Yin, Weiyong Yuan, Lianying Zhang

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Structure and magnetic properties of epitaxial Sr-LaMnO3 thin films obtained by polymer assisted deposition by Vukmirović Jelena, Piper Danica, Šenjug Pavla, Pajić Damir, Miljević Bojan, Milanović Marija, Joksović Sara, Novaković Mirjana, Srdić Vladimir V.

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Selective phase growth of ultra-smooth Ti2O3 and TiO2 thin films at low growth temperature controlled by the oxygen partial pressure by Jiayi Tang, Okkyun Seo, Jaemyung Kim, Ibrahima Gueye, L.S.R. Kumara, Ho Jun Oh, Wan-Gil Jung, Won-Jin Moon, Yong Tae Kim, Satoshi Yasuno, Tappei Nishihara, Akifumi Matsuda, Osami Sakata

Subjects: “…Epitaxial thin films…”
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Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode by Haris Naeem Abbasi, Moheb Sheikhi, Donghyeok Kim, Ranveer Singh, Jiarui Gong, Jie Zhou, Qiming Zhang, Shuoyang Qiu, Carolina Adamo, Patrick Marshall, Clincy Cheung, Vincent Gambin, Zhenqiang Ma

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Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth by Alexander Polyakov, In‐Hwan Lee, Vladimir Nikolaev, Aleksei Pechnikov, Andrew Miakonkikh, Mikhail Scheglov, Eugene Yakimov, Andrei Chikiryaka, Anton Vasilev, Anastasia Kochkova, Ivan Shchemerov, Alexey Chernykh, Stephen Pearton

Subjects: “…epitaxial lateral overgrowth…”
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Epitaxial growth of non-polar a-plane ZnO and aluminium-doped ZnO on r-sapphire using the intermittent spray pyrolysis methodology by Cerine Treesa Russel, Carmen Martinez Tomas, Vicente Muñoz Sanjosé

Subjects: “…Epitaxial thin film…”
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Designs of Charge-Balanced Edge Termination Structures for 3.3 kV SiC Power Devices Using PN Multi-Epitaxial Layers by Sangyeob Kim, Ogyun Seok

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