Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit by Weiming Zhang, Jian Zhou, Bing Wang, Yuqi Sun, Zhimei Sun

“…These materials offer distinct advantages in electrostatic integrity, crucial for overcoming traditional scaling bottlenecks. …”
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Long‐Channel Effects in Randomly Oriented Carbon Nanotube Thin Film Transistors by Hai‐Yang Liu, Panpan Zhang, Xianmao Cao, Yang Zhang, Jianping He, Maguang Zhu, Mengmeng Xiao, Zhiyong Zhang

“…The existence of the junctions between the CNTs results in an unconventional density of states for carriers and a large series resistance for sharing the gate voltage; this dominates the abnormal scaling behavior in the subthreshold region by degrading the electrostatic integrity. The discovery of the abnormal LCE can aid in the construction of device models and purposefully improve the performance of CNT TFTs for biosensors and other large‐scale electronic applications.…”
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Design and Analysis of High-K Wrapped GaN Gate All Around FET as High-Frequency Device in IOT Systems by Sneha Singh, Rudra Sankar Dhar, Amit Banerjee, Vinay Gupta

“…By controlling the electric field distribution and improving electrostatics integrity this design achieves augmented switching speed while suppresses leakage significantly, making the device a strong candidate for next-generation digital and RF applications.…”
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