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    Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy by Mamoru Kitaura, Heishun Zen, Shinta Watanabe, Hirokazu Masai, Kei Kamada, Kyoung-Jin Kim, Akira Yoshikawa, Jumpei Ueda

    Published 2025-02-01
    “…The transient response of the IR-absorption change suggested different relaxation processes for excited electrons in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce. Analysis of the thermally stimulated luminescence (TSL) glow curve determined the trap depth of the electrons in Gd3Al1Ga4O12:Ce. …”
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    Customs services and ways to improve their quality in the context of digitalisation by I. Yu. Sofiyannikova

    Published 2024-05-01
    Subjects: “…electronic declaration centre…”
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