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    Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films by Jian-Yang Lin, Bing-Xun Wang

    Published 2014-01-01
    “…Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.…”
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