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    Step-necking growth of silicon nanowire channels for high performance field effect transistors by Lei Wu, Zhiyan Hu, Lei Liang, Ruijin Hu, Junzhuan Wang, Linwei Yu

    Published 2025-01-01
    “…Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step. …”
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