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    Effect of SiC Particle Incorporated Dielectric Medium on Electrical Discharge Machining Behavior of AA6061/B4Cp/SiCp AMCs by Johny Khajuria, N. Nagabhooshanam, Pankaj Sharma, Atul Kumar, Santosh Kumar Sahu, Peyyala Sree Devi, Kuma Gowwomsa Erko

    Published 2022-01-01
    “…In this work, it was observed that using motor oil as the dielectric fluid when producing AA6061/SiCp/B4Cp hybrid composites provided wealth from waste. …”
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    Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics by Jiongjiong Mo, Xuran Zhao, Min Zhou

    Published 2017-01-01
    “…The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. …”
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    Article
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    Synthetic design and analysis on microwave dielectric properties of novel garnet-type Ca3MTiGe3O12 (M = Co, Ni) ceramics by Yuan Nie, Yanjun Liu, Ziqi Zhao, Wenjie Zhang, Fangyi Huang, Huanfu Zhou

    Published 2025-01-01
    “…CCTG and CNTG ceramics sintered at optimal temperatures exhibit excellent microwave dielectric properties with εr = 11.64, Q×f = 45474.73 GHz, τf = −42.01 ppm/°C and εr = 11.58, Q×f = 41346.11 GHz, τf = −45.53 ppm/°C, respectively. …”
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    Replacement of Ensemble Averaging by the Use of a Broadband Source in Scattering of Light from a One-Dimensional Randomly Rough Interface between Two Dielectric Media by Alexei A. Maradudin, Ingve Simonsen

    Published 2018-01-01
    “…By the use of phase perturbation theory we show that if a single realization of a one-dimensional randomly rough interface between two dielectric media is illuminated at normal incidence from either medium by a broadband Gaussian beam, it produces a scattered field whose differential reflection coefficient closely matches the result produced by averaging the differential reflection coefficient produced by a monochromatic incident beam over the ensemble of realizations of the interface profile function.…”
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    Different temperatures leakage mechanisms of (Al2O3)x(HfO2)1−x gate Dielectrics deposited by atomic layer deposition by Yifan Jia, Yi Fu, Xiangtai Liu, Zhan Wang, Pengcheng Jiang, Qin Lu, Shaoqing Wang, Yunhe Guan, Lijun Li, Haifeng Chen, Yue Hao

    Published 2025-01-01
    “…The impact of varying induced Al content on the dielectric properties of HfO2 was examined through electrical measurements. …”
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    Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum by Subiao Bian, Xi Chen, Changcai Cui

    Published 2025-02-01
    “…In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. …”
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