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- Physics 1
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181
A New Dual Circularly Polarized Feed Employing a Dielectric Cylinder-Loaded Circular Waveguide Open End Fed by Crossed Dipoles
Published 2016-01-01“…The waveguide aperture is loaded with a dielectric cylinder to reduce the cross-polarization beyond 90 degrees off the boresight. …”
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182
Dielectric Properties of the System GdCo 1-xFexO3 Synthesized by Chemical Route (x = 0.10, 0.20)
Published 2006-01-01“…The frequency dependence of dielectric constant in these materials indicates that space charge polarization contributes significantly to their observed dielectric parameters. …”
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183
Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu3Ti4O12 Synthesized by Sol-Gel Route
Published 2014-01-01“…A very high dielectric constant 21,500 was observed for the sample doped with Zr (0.02 mol%) at 50 Hz.…”
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184
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185
Anisotropic Ferro- and Dielectric Properties of Textured Bi4Ti3O12 Ceramics Prepared by the Solid-State Reaction Based on Multiple Calcination
Published 2010-01-01“…The dielectric anomalies of samples are observed around 157 K and 232 K. …”
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186
Effect of SiC Particle Incorporated Dielectric Medium on Electrical Discharge Machining Behavior of AA6061/B4Cp/SiCp AMCs
Published 2022-01-01“…In this work, it was observed that using motor oil as the dielectric fluid when producing AA6061/SiCp/B4Cp hybrid composites provided wealth from waste. …”
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187
Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics
Published 2017-01-01“…The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs) with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. …”
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188
Synthetic design and analysis on microwave dielectric properties of novel garnet-type Ca3MTiGe3O12 (M = Co, Ni) ceramics
Published 2025-01-01“…CCTG and CNTG ceramics sintered at optimal temperatures exhibit excellent microwave dielectric properties with εr = 11.64, Q×f = 45474.73 GHz, τf = −42.01 ppm/°C and εr = 11.58, Q×f = 41346.11 GHz, τf = −45.53 ppm/°C, respectively. …”
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190
Replacement of Ensemble Averaging by the Use of a Broadband Source in Scattering of Light from a One-Dimensional Randomly Rough Interface between Two Dielectric Media
Published 2018-01-01“…By the use of phase perturbation theory we show that if a single realization of a one-dimensional randomly rough interface between two dielectric media is illuminated at normal incidence from either medium by a broadband Gaussian beam, it produces a scattered field whose differential reflection coefficient closely matches the result produced by averaging the differential reflection coefficient produced by a monochromatic incident beam over the ensemble of realizations of the interface profile function.…”
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191
Defect Recognition: Applying Time-Lapse GPR Measurements and Numerical Approaches
Published 2025-01-01Subjects: “…dielectric constant…”
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192
Dielectric Temperature Stability and Enhanced Energy-Storage Performance of Sr<sub>0.4</sub>Ba<sub>0.6</sub>(Zr<sub>0.2</sub>Ti<sub>0.2</sub>Sn<sub>0.2</sub>Ta<sub>0.2</sub>Nb<sub>0.2</sub>)<sub>2</sub>O<sub>6</sub> High-Entropy Ferroelectric Ceramics
Published 2024-12-01Subjects: Get full text
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Impact of sintering temperature on the structural, morphological, and dielectric properties of (1-x)LaFeO3–xBaTiO3 (x = 0.49)
Published 2025-01-01Subjects: Get full text
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195
Dielectric function and thermo-optic coefficients of silicon-doped GaN substrates at elevated temperature from 298 K to 873 K in the UV-Vis-NIR spectrum
Published 2025-02-01“…In this study, we comprehensively characterized the thermal effects on the optical properties of silicon-doped GaN substrates using spectroscopic ellipsometry over a broad wavelength range from 250 nm to 1600 nm. The dielectric function of GaN was determined at temperatures ranging from 298 K to 873 K, demonstrating consistent temperature-dependent behavior. …”
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196
Pulsed plasma effect in the form of Debye lengths variation on air-suspended carbon nanoparticles
Published 2025-04-01Subjects: Get full text
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197
DISPERSION RELATIONS IN BILAYER GRAPHENE AT FINITE TEMPERATURE
Published 2021-07-01Subjects: Get full text
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198
Implementation and comprehensive investigation of gate engineered Si0.1Ge0.9/GaAs charged plasma based JLTFET for improved analog/ RF performance
Published 2025-03-01Subjects: Get full text
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199
The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer
Published 2025-01-01“…We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. …”
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200
A Metallo-Dielectric Groove Gap Waveguide Slotted Array Antenna With Hybrid Glide-Symmetric Holes & “Mushroom”-Type Metasurfaces
Published 2025-01-01“…This integration addresses assembly challenges between metal and dielectric layers, avoiding delicate welding techniques. …”
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