Optical and Structural Properties of Thermally Evaporated Zinc Oxide Thin Films on Polyethylene Terephthalate Substrates by M. G. Faraj, K. Ibrahim

“…The optical properties of ZnO on PET substrates were determined through the optical transmission method using an ultraviolet-visible spectrophotometer. The optical band gap values of ZnO thin films slightly decreased as the film thickness increased.…”
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EBG Size Reduction for Low Permittivity Substrates by Gonzalo Expósito-Domínguez, José Manuel Fernández-González, Pablo Padilla, Manuel Sierra-Castañer

“…Double layer and edge-location via techniques are combined for electromagnetic band gap (EBG) size reduction. The study of the required number of elements and their dimensions is carried out in order to suppress the surface wave propagation modes and consequently to reduce the mutual coupling between radiating elements in low-permittivity substrates. …”
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To Enhance Performance of Light Soaking Process on ZnS/CuIn1-xGaxSe2 Solar Cell by Yu-Jen Hsiao, Chung-Hsin Lu, Te-Hua Fang

“…The crystallinity of the CIGS absorber layer is prepared by coevaporated method and the ZnS buffer layer with a band gap of 3.21 eV. The MoS2 phase was also found in the CuInGaSe2/Mo system form HRTEM. …”
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Effect of Thickness on Structural and Optical Properties of Tetra-tert- butyl-2, 3-naphthalocyanine Thin Films by I. Dhanya, C S Menon

“…Various optical constants like band gap energy, Eg the width of band tails of localized states into the gap, EU and steepness parameter, β gets calculated and the variation of different optical parameters like refractive index, extinction coefficient, dielectric constants, optical conductivity and surface and volume energy losses with photon energy are estimated.…”
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Progress in Tungsten Trioxide-Based Materials for Energy Storage and Smart Window Applications by Khursheed Ahmad, Tae Hwan Oh

“…WO₃ is a highly electrochromic (EC) material with a wide band gap that has been extensively used for the construction of working electrodes for supercapacitor (SC) and ECD applications. …”
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Prediction of a New Phase of CuxS near Stoichiometric Composition by Prashant Khatri, Muhammad N. Huda

“…Cu2S is known to be a promising solar absorber material due to its suitable band gap and the abundance of its constituent elements. …”
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Enhancement in Optical Properties of Lanthanum-Doped Manganese Barium Hexaferrites under Different Substitutions by Meshal Alzaid

“…The intensity peak is increased with increasing the concentration of lanthanum, which shows the enhancement in the degree of crystallinity and increase in the size of crystallite. The band gap energy decreased gradually with the increase of concentration of lanthanum. …”
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Effect of defects such as vacancy with oxygen and adsorbed oxygen on electronic structure of graphene plane by V. A. Sachkov

“…The analysis of the dependence of the main parameters of the zone electronic structure: the width of the band gap, and the mobility of free charge carriers depending on the concentration and type of defect. …”
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One Dimensional Polymeric Organic Photonic Crystals for DFB Lasers by F. Scotognella, A. Monguzzi, M. Cucini, F. Meinardi, D. Comoretto, R. Tubino

“…Due to the high photonic density of states at the edges of the photonic band-gap (PBG), a surface emitting distributed feedback (DFB) laser is obtained with this structure. …”
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Synthesis of Artificial Magnetic Conductors Using Structure-Based Evolutionary Design by Luisa Deias, Giuseppe Mazzarella, Giorgio Montisci, Giovanni Andrea Casula

“…An evolutionary programming approach, the so-called structure based evolutionary design, is applied to the synthesis of planar periodic electronic band gap in order to obtain an artificial magnetic conductor surface. …”
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Exploring the electronic and magnetic properties of half-heusler alloy CoMnSb: implications for spintronics by Binay Limbu, Prem Sagar Dahal

“…The hybridization of the eg and t2g orbitals of the Co, Mn, and P-orbitals of the Sb are primarily responsible for the band gap. This indicates that these alloys hold great potential as functional materials for spintronics. …”
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Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping by Mohammad W. Kadi, R. M. Mohamed

“…UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. …”
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Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron by Hong-Sub Lee, Hyung-Ho Park

“…The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. …”
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Wave Propagation in L-Shape Beams with Piezoelectric Shunting Arrays by Shengbing Chen, Yubao Song, Hao Zhang

“…As the resistance increases, the width of the band gaps grows, whereas the attainable maximum attenuation within the band gaps shows a significant decrease. …”
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Exploring the electronic and magnetic properties of half-heusler alloy CoMnSb: implications for spintronics by Binay Limbu, Prem Sagar Dahal

“…The hybridization of the eg and t2g orbitals of the Co, Mn, and P-orbitals of the Sb are primarily responsible for the band gap. This indicates that these alloys hold great potential as functional materials for spintronics. …”
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Modeling and Optimization of BT and DBT Photooxidation over Multiwall Carbon Nanotube-Titania Composite by Response Surface Methodology by Molood Barmala, Mohammad Behnood

“…Although the generated structure band gap is 3.4, but due to the presence of MWCNTs in the structure, it is capable of absorbing visible light, and this leads to complete removal of DBT and 42% removal of BT under visible light radiation (in similar circumstances). …”
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Fabrication of Cu–Zn–Sn–S–O Thin Films by the Electrochemical Deposition Method and Application to Heterojunction Cells by Kai Yang, Masaya Ichimura

“…The films deposited by pulsed ECD contained smaller amount of oxygen than those deposited by DC ECD. The films had band gap energies in a range from 1.5 eV and 2.1 eV. …”
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New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells by A. Zerga, M. Benosman, F. Dujardin, B. Benyoucef, J-P. Charles

“…In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. …”
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Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes by Anurag Srivastava, Mohammad Irfan Khan, Neha Tyagi, Purnima Swaroop Khare

“…The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL). …”
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Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN by Lili Cai, Cuiju Feng

“…The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). …”
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