Showing 41 - 60 results of 319 for search '"band gap"', query time: 0.06s Refine Results
  1. 41

    Conformational Analysis (Semi Empirical PM3) and Electronic Properties of Functionalized Oligo(hexylpyrroles) by O. A. Odunola, B. Semire

    Published 2007-01-01
    “…A semi empirical analysis of functionalized 3-hexylpyrroles [3XHP, where X= Br, NH2, SH, CN, COOH, CONC(CH3)2 and N(CH3)2] having functional group attached to the hexyl substituent up to four monomeric units in head-tail-head-tail regioselectivity was carried out. The energy band gap obtained at PM3 level showed that oligomers with 3BHP present lowest energy band gap. …”
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    Article
  2. 42

    Preferential Crystallographic Orientation and Optical Properties in (Ag,Zn)-Based Oxide Nanoparticle Thin Film Depending on Spark Voltage by Ebru Güngör, Tayyar Güngör

    Published 2024-01-01
    “…The optical band gap narrowed (redshifted) due to the effect of Ag ions entering the ZnO structure. …”
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    Article
  3. 43

    Morphological, Structural, and Optical Properties of Single-Phase Cu(In,Ga)Se2 Thin Films from the Selenization of Thermally Evaporated InSe/Cu/GaSe Precursors by Francis B. Dejene

    Published 2014-01-01
    “…The relatively small band gap values (~1 eV) of CuInSe2 thin films limit the conversion efficiencies of completed CuInSe2/CdS/ZnO solar cell devices. …”
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    Article
  4. 44

    Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation by Wujisiguleng Bao, Masaya Ichimura

    Published 2015-01-01
    “…The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. …”
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    Article
  5. 45

    Surface Photovoltage Spectroscopy and AFM Analysis of CIGSe Thin Film Solar Cells by Nima E. Gorji, Ugo Reggiani, Leonardo Sandrolini

    Published 2015-01-01
    “…The band gap, grain size, and topography of a Cu(In,Ga)Se2 (CIGSe) thin film solar cell are analyzed using surface photovoltage spectroscopy (SPV) and atomic force microscopy (AFM) techniques. …”
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    Article
  6. 46
  7. 47

    Studies on the Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films by Benny Joseph, C. S. Menon

    Published 2007-01-01
    “…The band gap increases again at 458K with full of fiber like grains. …”
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    Article
  8. 48

    A comprehensive review of yttrium aluminum nitride: crystal structure, growth techniques, properties, and applications by N. Afshar, M. Yassine, O. Ambacher

    Published 2025-02-01
    “…YAlN has emerged as a wide band gap semiconductor with high potential to compete with ScAlN in industrial applications. …”
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    Article
  9. 49

    Analysis of the defect mode features in an asymmetric and symmetric acoustic system using expansion chambers by Ilyas Antraoui, Ali Khettabi, Mohammed Sallah, Zaky A. Zaky

    Published 2025-01-01
    “…Concerning the defected asymmetrical configuration, there is a consistent peak located inside acoustic band gap. On the other hand, in the symmetrical structure, two consistent peaks appear in the band gap. …”
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    Article
  10. 50

    Sensitization of Perovskite Strontium Stannate SrSnO3 towards Visible-Light Absorption by Doping by Hungru Chen, Naoto Umezawa

    Published 2014-01-01
    “…Perovskite strontium stannate SrSnO3 is a promising photocatalyst. However, its band gap is too large for efficient solar energy conversion. …”
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    Article
  11. 51

    Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D by S. Ouédraogo, F. Zougmoré, J. M. Ndjaka

    Published 2013-01-01
    “…Increasing hole density (p) or absorber band gap (Eg) improves Voc and leads to high efficiency, which equals value of 16.1% when p = 1016 cm−3 and Eg=1.2 eV. …”
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  12. 52

    Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model by D. P. Samajdar, S. Dhar

    Published 2014-01-01
    “…The calculated values of band gap variation agree well with the available experimental data.…”
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    Article
  13. 53

    Diverse Role of Silicon Carbide in the Domain of Nanomaterials by T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly

    Published 2012-01-01
    “…Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. …”
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  14. 54
  15. 55

    Synthetic Strategies and Applications of GaN Nanowires by Guoquan Suo, Shuai Jiang, Juntao Zhang, Jianye Li, Meng He

    Published 2014-01-01
    “…GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. …”
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    Article
  16. 56

    Studies on the Optical Properties and Surface Morphology of Cobalt Phthalocyanine Thin Films by Benny Joseph, C. S. Menon

    Published 2008-01-01
    “…The present studies reveal that the optical band gap energies of CoPc thin films are almost same on substrate temperature variation. …”
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    Article
  17. 57

    DFT and TD-DFT Study of Structure and Properties of Semiconductive Hybrid Networks Formed by Bismuth Halides and Different Polycyclic Aromatic Ligands by Y. Belhocine, M. Bencharif

    Published 2011-01-01
    “…However, significant differences were obtained for the band gap values with relativistic effects of the zero order regular approximation scalar corrections (ZORA) and LB94 functional seems to reproduce better the experimental optical band gap of these systems.…”
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  18. 58

    Thickness Dependent on Photocatalytic Activity of Hematite Thin Films by Yen-Hua Chen, Kuo-Jui Tu

    Published 2012-01-01
    “…Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. …”
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  19. 59

    Magnetic Properties of Fe and Ni Doped SnO2 Nanoparticles by Ravi Kumar, K.D.Verma, Shalendra Kumar, Mayora Varshney, Aditya Sharma

    Published 2011-07-01
    “…TEM results depict the formation of spherically shaped and small sized nanoparticles of the diameter of ~ 3 nm. The band gap energy of the Fe and Ni doped samples found to decrease with increasing their concentrations. …”
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  20. 60

    Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering by Pengyi Zhao, Shuying Cheng

    Published 2013-01-01
    “…Cu2SnS3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. …”
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    Article