SRAM and Mixed-Signal Logic With Noise Immunity in 3-nm Nano-Sheet Technology by Rajiv V. Joshi, J. Frougier, Alberto Cestero, Crystal Castellanos, Sudipto Chakraborty, Carl Radens, M. Silvestre, S. Lucarini, I. Ahsan, E. Leobandung

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Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology by Yuxin Liu, Qiang Liu, Jin Chen, Zhiqiang Mu, Xing Wei, Wenjie Yu

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THERMAL EFFECTIVENESS OF THE GAS FLOW VORTICAL HEATRELEASE INTENSIFICATION AT AXIAL AND TRANSVERSAL FLOWING-AROUND THE ROUND-TUBULAR SURFACES Part 2 by V. B. Kuntysh, A. B. Sukhotskiy, A. V. Yatsevich

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THERMAL EFFECTIVENESS OF THE GAS FLOW VORTICAL HEAT-RELEASE INTENSIFICATION AT AXIAL AND TRANSVERSAL FLOWING-AROUND THE ROUND-TUBULAR SURFACES. Part 1 by V. B. Kuntysh, A. V. Sukhotskiy, A. V. Yatsevich

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Research on “Identification–Cognition–Perception” of the Pedestrian Spaces Around Subway Stations near Popular Tourist Attractions from the Tourists’ Perspective: A Case Study of T... by Weiwei Liu, Jianwei Yan, Xiang Sun, Ruiqi Song

Subjects: “…pedestrian spaces around subway stations…”
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Is Autogenous cortical bone sheet reliable for the management of defects around dental implants by using scalpel technique? by Burak Bayram

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'A journey around his room': Genre uniqueness of I.A. Goncharov's novel 'Oblomov' by L.A. Sapchenko

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A Comparative Analysis of Middle-of-Line Contact Architectures for Complementary FETs by Seung Kyu Kim, Johyeon Kim, Gunhee Choi, Kee-Won Kwon, Jongwook Jeon

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CARBOXYLATO ADDUCTS AND DERIVATIVES CONTAINING SnR3 (R = Ph, Me) AND SnMe2 RESIDUES: SYNTHESIS, INFRARED AND MÖSSBAUER STUDIES by SEYDOU BASSENE, MOUHAMADOU SEMBENE BOYE, MAMADOU SIDIBE, LIBASSE DIOP

Subjects: “…trigonal bipyramidal environment around tin (IV)…”
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Performance Optimization of Fabricated Nanosheet GAA CMOS Transistors and 6T-SRAM Cells via Source/Drain Doping Engineering by Xuexiang Zhang, Qingkun Li, Lei Cao, Qingzhu Zhang, Renjie Jiang, Peng Wang, Jiaxin Yao, Huaxiang Yin

Subjects: “…Gate-all-around nanosheet transistor (GAA NSFET)…”
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