TCAD Simulation Study of Cylindrical Vertical Double-Surrounding-Gate a-InGaZnO FETs and Geometric Parameter Optimization by Yue Zhao, Lihua Xu, Chuanke Chen, Xufan Li, Kexin Shang, Di Geng, Lingfei Wang, Ling Li

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Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory by Lihua Xu, Kaifei Chen, Zhi Li, Yue Zhao, Lingfei Wang, Ling Li

Subjects: “…independent dual gate a-IGZO-FET…”
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Novel source/drain contact structure for a-IGZO devices: Oxygen-scavenger-layer metal-interlayer-semiconductor (OSL MIS) approach by Sungjoo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu

Subjects: “…A-IGZO…”
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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs by Fanzhao Meng, Yi Li, Jun Li, Jie Liang, Jianhua Zhang

Subjects: “…Amorphous InGaZnO (a-IGZO)…”
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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress by Muhammad Aslam, Shu-Wei Chang, Min-Hui Chuang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li

Subjects: “…a-IGZO TFT…”
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