The Effect of Package Structure on the Light Extraction Efficiency of Near-Ultraviolet LED by Li Bing-qian

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Quantum Efficiency Improvement of InGaN Near Ultraviolet LED Design by Genetic Algorithm by Yasemin Çiftci, Esra Eroğlu, Bilgehan Barış Öner, İrem Alp

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Improved the AlGaN-Based Ultraviolet LEDs Performance With Super-Lattice Structure Last Barrier by Qian Chen, Jun Zhang, Yang Gao, Jingwen Chen, Hanling Long, Jiangnan Dai, Zi-hui Zhang, Changqing Chen

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Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure by Huabin Yu, Qian Chen, Zhongjie Ren, Meng Tian, Shibing Long, Jiangnan Dai, Changqing Chen, Haiding Sun

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Hydrogen Peroxide Augments the Disinfection Efficacy of 280 nm Ultraviolet LEDs against Antibiotic-Resistant Uropathogenic Escherichia coli Otherwise Tolerant to Germicidal Irradiation by Fatemeh Hashemzadeh, Andrew Geppert, Leland J. Jackson, Joe J. Harrison, Gopal Achari

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Germicidal Efficiency of 272 nm LED in Relation to the Hospital Strain of Klebsiella Pneumoniae by A. S. Kamrukov, T. V. Chernenkaya, L. Yu. Volodin, S. S. Petrikov, K. A. Popugaev, V. V. Bagrov, I. V. Bukhtiyarov, E. V. Zibarev, K. A. Semenov, V. I. Krylov

Subjects: “…ultraviolet led…”
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The Caddisfly Collective: Methods of assessing Trichoptera diversity on a continental scale with community scientists by Kelly M. Murray-Stoker, Shannon J. McCauley

“…We mailed collecting kits with a USB-powered ultraviolet LED light, a collecting container, bottles of preservative, data sheets, and collection labels to each participant; participants mailed back specimens and completed data sheets. …”
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Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm by V.P. Veleschuk, A.I. Vlasenko, Z.K. Vlasenko, D.N. Khmil’, O.M. Kamuz, I.V. Petrenko, V.P. Tartachnyk, A.V. Shulga, V.V. Borshch

“…Visible electro- and photoluminescence of the ultraviolet LEDs (пЃ¬В пЂЅВ 365В nm) was studied. It is established that at nitrogen temperature yellow electroluminescence is absent and occurs when the current or temperature increases. …”
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Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and p-Type Hole Supply Layer by Jinxing Wu, Peixian Li, Xiaowei Zhou, Jiangtao Wu, Yue Hao

“…Overall, we conclude that the double Al composition gradient structure provides a pathway to achieve high-efficiency ultraviolet LEDs.…”
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