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Excitonic insulator candidate Ta2NiSe5 and related transition-metal compounds studied by resonant inelastic x-ray scattering
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42
Performance Assessment of Ultrascaled Vacuum Gate Dielectric MoS<sub>2</sub> Field-Effect Transistors: Avoiding Oxide Instabilities in Radiation Environments
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Improvement of MoS<sub>2</sub> Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid
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Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing
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