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61
In memoriam Francisc Rapp (n. 1926) e Michel Parisse (n. 1936)
Published 2020-07-01Get full text
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62
Quasi-Exact Coulomb Dynamics of n Charges n-1 of Which Are Equal
Published 2017-01-01“…For n≥3 point charges n-1 of which are negative and equal quasi-exact periodic solutions of their Coulomb equation of motion are found. …”
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63
6-Bromo-9,9-diethyl-N,N-diphenylfluoren-2-amine
Published 2024-12-01“…In the title compound, C29H26BrN, the dihedral angles between the fluorene fused-ring system and the pendant phenyl groups are 67.76 (12) and 88.38 (12)°. …”
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64
Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
Published 2012-01-01“…The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. …”
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65
Catalyst-Free and Highly Selective N,N-Diallylation of Anilines in Aqueous Phase
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66
Microwave Dielectric Study of Tetramethylurea and N, N-Dimethylacetamide Binary Mixture in Benzene
Published 2011-01-01“…Dielectric relaxation of the binary mixture of tetramethylurea and N, N-dimethylacetamide has been studied at fixed frequency and temperature (9.88 GHz & 298 K respectively) in benzene solution. …”
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67
Étude des $(n+1)$-tissus de courbes en dimension $n$
Published 2023-11-01“…For $(n+1)$-webs by curves in an ambiant $n$-dimensional manifold, we first define a generalization of the well known Blaschke curvature of the dimension two, which vanishes iff the web has the maximum possible rank which is one. …”
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68
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
Published 2025-01-01“…Abstract We introduce a novel material for integrated photonics and investigate aluminum gallium nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for developing reconfigurable and on-chip nonlinear optical devices. …”
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69
Synthesis, Cytotoxicity, and Antileishmanial Activity of N,N'-Disubstituted Ethylenediamine and Imidazolidine Derivatives
Published 2010-01-01“…This paper describes the preparation of N,N'-disubstituted ethylenediamine and imidazolidine derivatives and their in vitro biological activities against Leishmania species. …”
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70
NLO in the large charge sector of the critical O(N) model at large N
Published 2025-02-01“…Abstract We compute the next-to-leading correction to the scaling dimension of large-charge operators in the 3d critical O(N) model in a double scaling limit in which both N and the operator charge Q are taken to be large. …”
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71
Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics
Published 2013-01-01“…This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. …”
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72
Crystal structure of (glycinto-κ 2 O,N ′)-[5,5,7,12,12,14-hexamethyl-1,4,8,11-tetraazacyclotetradecane-κ 4 N,N ′,N ″,N ‴]nickel(II) perchlorate monohydrate C18H42ClN5NiO7
Published 2023-08-01“…C18H42ClN5NiO7, orthorhombic, Pca21 (no. 29), a = 14.270(3) Å, b = 9.918(2) Å, c = 17.603(4) Å, V = 2491.4(10) Å3, Z = 4, R gt(F) = 0.0382, wR ref(F 2) = 0.0861, T = 173(2) K.…”
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73
The crystal structure of poly[(μ 3-imidazolato-κ 3 N:N:N′)(tetrahydrofuran- κ 1 O)lithium(I)], C7H11LiN2O
Published 2021-09-01“…C7H11LiN2O, monoclinic, P21/c (no. 14), a = 8.9067(1) Å, b = 8.6975(1) Å, c = 10.2398(1) Å, β = 101.900(3)°, V = 770.491(15) Å3, Z = 4, R gt(F) = 0.0338, wR ref(F 2) = 0.0925, T = 100 K.…”
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74
Response of Soil C and N, Dissolved Organic C and N, and Inorganic N to Short-Term Experimental Warming in an Alpine Meadow on the Tibetan Plateau
Published 2014-01-01“…Although alpine meadows of Tibet are expected to be strongly affected by climatic warming, it remains unclear how soil organic C (SOC), total N (TN), ammonium N (NH4+-N) , nitrate N (NO3+-N), and dissolved organic C (DOC) and N (DON) respond to warming. …”
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75
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Published 2025-01-01Subjects: Get full text
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76
Crystal structure of [N(E),N′(E)]-N,N′-(1,4-phenylenedimethylidyne)bis-3,5-dimethyl-1H-pyrazol-4-amine di-methanol solvate, C18H20N6·2(CH3OH)
Published 2023-10-01“…C18H20N6·2(CH3OH), triclinic, P1‾$P\overline{1}$ (no. 2), a = 5.0063(2) Å, b = 8.5627(5) Å, c = 12.8216(6) Å, α = 77.898(4)°, β = 89.301(4)°, γ = 76.601(4)°, V = 522.40(5) Å3, Z = 1, Rgt(F) = 0.0577, wRref(F2) = 0.1642, T = 178 K.…”
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77
The crystal structure of cis-diaqua-bis (N-butyl-N-(pyridin-2-yl)pyridin-2-amine-κ2N,N′)cobalt(II)] dichloride trihydrate, C28H44Cl2N6O5Co
Published 2021-09-01“…C28H44Cl2N6O5Co, triclinic, P1‾$P‾{1}$ (no. 2), a = 11.20(2) Å, b = 12.70(3) Å, c = 12.80(4) Å, α = 100.30(12)°, β = 103.18(9)°, γ = 106.77(6)°, V = 1638(8) Å3, Z = 2, Rgt(F) = 0.0372, wRref(F2) = 0.0890, T = 100 K.…”
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78
AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results
Published 2011-01-01“…Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. …”
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79
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80
Design, Implementation, and Analysis of High-Speed Single-Stage N-Sorters and N-Filters
Published 2021-01-01“…A design system modification is shown to produce even faster single-stage <inline-formula> <tex-math notation="LaTeX">$N$ </tex-math></inline-formula>-max and <inline-formula> <tex-math notation="LaTeX">$N$ </tex-math></inline-formula>-min filters. …”
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