Showing 541 - 560 results of 47,689 for search '"The N"', query time: 0.15s Refine Results
  1. 541

    Realized stable BP-N at ambient pressure by phosphorus doping by Guo Chen, Chengfeng Zhang, Yuanqin Zhu, Bingqing Cao, Jie Zhang, Xianlong Wang

    Published 2025-01-01
    “…Black-phosphorus-structured nitrogen (BP–N) is an attractive high-energy-density material. …”
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    A Summary of N, P, and K Research with Pepper in Florida by George Hochmuth, Ed Hanlon

    Published 2011-01-01
    “…SL 334/CV230: A Summary of N, P, and K Research with Pepper in Florida (ufl.edu) …”
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    Article
  10. 550

    Reactions of Chlorine Gas on Benzaldehyde-di-n-alkyl Acetals by A. Edwin Vasu, K. Joseph Santhanaraj, S. Raja

    Published 2008-01-01
    “…Reactions of chlorine gas on six aromatic acetals, the benzaldehyde di-n-alkyl acetals, C6H4-CH(OR)2 where R=ethyl (1a), n-propyl (2a), n-butyl (3a), isobutyl (4a), n-amyl (5a) and isoamyl (6a) were studied. …”
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    On some properties of the linear-invariant family of n-th order by Eduardas Kirjackis, Jevgenijus Kirjackis

    Published 2023-09-01
    “… In the work the linear-invariant family n-th order is determined. The omega-operator and the functionals related with it are introduced on this family. …”
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  14. 554

    An improved Fully Homomorphic Encryption model based on N-Primes by Mohammed Anwar Mohammed, Fadhil Salman Abed

    Published 2019-10-01
    “…In this paper, instead of dealing with two prime numbers it is expanded to deal with n prime numbers. The security of the presumptive algorithm to be more efficient in front of the security challenges facing cloud computing. …”
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  15. 555

    Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors by M. Rahmoun, E. Bendada, A. El Hassani, K. Raïs

    Published 2000-01-01
    “…A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. …”
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    Hydrogenolysis of n-Butane over Ru/AlO Catalysts by Janusz Ryczkowski, Marcin Kuśmierz, Dobiesław Nazimek, Sylwia Pasieczna

    Published 2002-12-01
    “…Measurements of the rate of hydrogenolysis of n-butane were carried out in a gradientless reactor. …”
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  20. 560

    Free minimal resolutions and the Betti numbers of the suspension of an n-gon by Tilak de Alwis

    Published 2000-01-01
    “…Consider the general n-gon with vertices at the points 1,2,…,n. Then its suspension involves two more vertices, say at n+1 and n+2. …”
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