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An Asynchronous Low Power and High Performance VLSI Architecture for Viterbi Decoder Implemented with Quasi Delay Insensitive Templates
Published 2015-01-01“…The functionality of the proposed asynchronous design is simulated and verified using Tanner Spice (TSPICE) in 0.25 µm, 65 nm, and 180 nm technologies of Taiwan Semiconductor Manufacture Company (TSMC). The simulation result illustrates that the asynchronous design techniques have 25.21% of power reduction compared to synchronous design and work at a speed of 475 MHz.…”
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22
Research on <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML"> <msub> <mi>F</mi> <mrow> <msup> <mi>p</mi> <mn>2</mn> </msup> </mrow> </msub></math></in...
Published 2022-02-01“…A quadratic extended-domain finely integrated operand scanning (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML"> <msub> <mi>F</mi> <mrow> <msup> <mi>p</mi> <mn>2</mn> </msup> </mrow> </msub> </math></inline-formula>-FIOS) modular multiplication algorithm for bilinear pairs was proposed to address the problem of low efficiency of bilinear pair operations.The algorithm effectively reduced the number of modular reductions in modular multiplication by optimizing the operation process of (AB+CD)mod P under the quadratic expansion domain.Two hardware architectures and their scheduling methods were designed to meet different application requirements.In order to improve the computational efficiency of the algorithm, the TSMC 55 nm process was used to realize the bilinear pairing operation unit.Compared with the existing literature, the designed architecture is superior to similar modular multiplication designs in performance indicators such as the first modular multiplication time, clock frequency and the area-time product, and also has certain advantages in the overall Optimal ate pair implementation.…”
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23
Adaptive Optimal Terminal Sliding Mode Control for T-S Fuzzy-Based Nonlinear Systems
Published 2024-01-01“…This study utilizes the Takagi–Sugeno fuzzy model to represent a subset of nonlinear systems and presents an innovative adaptive approach for optimal dynamic terminal sliding mode control (TSMC). The systems under consideration encompass bounded uncertainties in parameters and actuators, as well as susceptibility to external disturbances. …”
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Output Feedback Fractional-Order Nonsingular Terminal Sliding Mode Control of Underwater Remotely Operated Vehicles
Published 2014-01-01“…For the 4-DOF (degrees of freedom) trajectory tracking control problem of underwater remotely operated vehicles (ROVs) in the presence of model uncertainties and external disturbances, a novel output feedback fractional-order nonsingular terminal sliding mode control (FO-NTSMC) technique is introduced in light of the equivalent output injection sliding mode observer (SMO) and TSMC principle and fractional calculus technology. …”
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25
Bus Implementation Using New Low Power PFSCL Tristate Buffers
Published 2016-01-01“…SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. …”
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26
A 7-nm-Based 5R4W High-Timing Reliability Regfile Circuit
Published 2023-01-01“…First, the scheme analyzed the principles of timing errors such as read/write conflicts, write errors, and read errors in the Regfile circuit; then adopted the timing separation method of independent control of the read/write process by clock double edges to solve multiport read/write conflicts, designed a mirror memory check circuit to avoid write errors caused by the word line delays, and used a phase-locked clock feedback structure to eliminate read errors caused by the data timing fluctuations; in the TSMC 7 nm FinFET process, a 64 × 74-bit 5R4W Regfile circuit was implemented using a fully customized layout. …”
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27
A Low-Power Ultrawideband Low-Noise Amplifier in 0.18 μm CMOS Technology
Published 2013-01-01“…This paper presents an ultrawideband low-noise amplifier chip using TSMC 0.18 μm CMOS technology. We propose a UWB low noise amplifier (LNA) for low-voltage and low-power application. …”
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28
A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management
Published 2025-01-01“…This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. …”
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29
Mutator Circuit for Memcapacitor Emulator Using Operational Transconductance Amplifiers
Published 2024-12-01“…All simulations were conducted using LTSpice with Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm complementary metal oxide semiconductor (CMOS) process parameters. …”
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30
An 8‐bit digital‐to‐time converter with pre‐skewing and time interpolation
Published 2021-10-01“…The DTC is designed in a TSMC 65 nm 1.0 V CMOS technology and analysed using Spectre with BSIM3V3 device models. …”
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31
Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell
Published 2021-10-01“…Simulation based on a mathematical model of memristor is presented and analysed using 65 nm TSMC MOS model parameters. Corner simulations and Monte Carlo simulations are carried out to substantiate the robustness of the design against process variation. …”
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32
A Power-Efficient Soft-Output Detector for Spatial-Multiplexing MIMO Communications
Published 2012-01-01“…The proposed detector, using TSMC 0.18 μm single-poly six-metal CMOS process with a core area of 1.17×1.17 mm2, provides fixed throughput of 45 Mbps in 64-QAM configuration, 120 Mbps in 16-QAM configuration, and 60 Mbps in QPSK configuration. …”
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33
A Low-Power Streaming Speech Enhancement Accelerator for Edge Devices
Published 2024-01-01“…This is achieved through a 1-D processing array, utilizing configurable SRAM addressing, thereby minimizing hardware complexities and simplifying zero skipping. Using the TSMC 40nm CMOS process, the final implementation requires merely 207.8K gates and 53.75KB SRAM. …”
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34
A 10 GHz Dual-Loop PLL With Active Cycle-Jitter Correction Achieving 12dB Spur and 29% Jitter Reduction
Published 2024-01-01“…An experimental prototype has been fabricated in a TSMC 40 nm CMOS process. By activating the ACJC, the spurious tones can be reduced by 12 dB when a 260MHz disturbance is injected without resort to sophisticated calibration. …”
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35
A Single-Inductor Bipolar-Output DC-DC Converter With Tunable Asymmetric Power Distribution Control (APDC) for AMOLED Applications
Published 2025-01-01“…The proposed SIBO DC-DC converter, fabricated using TSMC’s 0.18um 1.8V/3.3V 1P6M Mixed Signal process, is suitable for load ranges from 20mA to 200mA. …”
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36
Flatness-Based Motion Planning and Control Strategy of a 3D Overhead Crane
Published 2025-01-01“…Additionally, a Fixed-Time Extended State Observer (FxTESO) is implemented to estimate states and disturbances in fixed time, and a Terminal Sliding Mode Control (TSMC) ensures robust trajectory tracking. Simulation studies and lab-scale experiments on the 3DOC demonstrate the method’s improvements in trajectory optimization, disturbance rejection, and overall performance. …”
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A Radar-Based System for Detection of Human Fall Utilizing Analog Hardware Architectures of Decision Tree Model
Published 2024-01-01“…The circuit designs were executed using TSMC’s 90 nm CMOS process technology and the Cadence IC Suite was employed for tasks including design, schematic implementation, and post-layout simulations.…”
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A Low Power CMOS UWB LNA with Sub-1V Supply Voltage and Noise Cancellation Technique
Published 2024-08-01“…Then, the proposed amplifier has been implemented in TSMC 0.18µm RF-CMOS technology and simulated using Cadence-IC software. …”
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Analog Computing for Nonlinear Shock Tube PDE Models: Test and Measurement of CMOS Chip
Published 2025-01-01“…The design was realized in TSMC 180 nm CMOS technology. It has an active area of 7.38 mm<inline-formula> <tex-math notation="LaTeX">$\times 4.64$ </tex-math></inline-formula> mm and consumes 936 mW while delivering an equivalent FDTD temporal update rate of 80 MHz and an analog bandwidth of 2 MHz. …”
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Millimeter-Wave All-Digital Phase-Locked Loop Using Reference Waveform Oversampling Techniques
Published 2024-01-01“…The proposed ADPLL is implemented in TSMC 28-nm LP CMOS. The prototype generates a 24–31-GHz output carrier with rms jitter of 237 fs while consuming only 12 mW. …”
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