-
1
Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching
Published 2025-06-01Subjects: Get full text
Article -
2
Study on 3D Effects on Small Time Delay Integration Image Sensor Pixels
Published 2025-03-01Subjects: Get full text
Article -
3
Novel Gas Sensor Signal Acquisition Method: Amplifying Sensor Signals and Enabling Efficient Gas Identification
Published 2025-06-01Subjects: Get full text
Article -
4
Influence of Surface Isolation Layers on High-Voltage Tolerance of Small-Pitch 3D Pixel Sensors
Published 2025-07-01Subjects: Get full text
Article -
5
TCAD Simulation Study of Electrical Performance of a Novel High-Purity Germanium Drift Detector
Published 2025-02-01Subjects: Get full text
Article -
6
Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability
Published 2025-06-01Subjects: Get full text
Article -
7
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs
Published 2025-03-01Subjects: Get full text
Article -
8
Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes
Published 2025-09-01Subjects: Get full text
Article -
9
Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors
Published 2025-06-01Subjects: Get full text
Article -
10
Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design
Published 2020-01-01Subjects: Get full text
Article -
11
Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks
Published 2024-01-01Subjects: “…technology computer-aided design (TCAD) simulation…”
Get full text
Article -
12
Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors
Published 2025-07-01Subjects: Get full text
Article -
13
Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer
Published 2025-01-01Subjects: Get full text
Article -
14
Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT
Published 2025-06-01Subjects: Get full text
Article -
15
Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs
Published 2025-01-01Subjects: Get full text
Article -
16
Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions
Published 2025-01-01Subjects: Get full text
Article -
17
-
18
Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits
Published 2025-08-01Subjects: Get full text
Article -
19
Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature
Published 2025-01-01Subjects: “…technology computer-aided design (TCAD) simulation…”
Get full text
Article -
20
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs
Published 2025-01-01Subjects: Get full text
Article