TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Aggressively scaled T-Gated GaN-on-silicon RF power HEMT featuring step graded SRL-AlGaN buffer for next generation broad band power amplifiers by A Akshaykranth, J Ajayan, Sandip Bhattacharya, D Nirmal, Santhosh Paramasivam, Gianluca Gatto, Amit Kumar

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Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

Subjects: “…technology computer-aided design (TCAD) simulation…”
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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs by Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

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