Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching by Qinze Cao, Neophytos Lophitis, Arne Benjamin Renz, Kyrylo Melnyk, Marina Antoniou, Peter Michael Gammon

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Study on 3D Effects on Small Time Delay Integration Image Sensor Pixels by Siyu Guo, Quan Zhou, Pierre Boulenc, Alexander V. Klekachev, Xinyang Wang, Assaf Lahav

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Novel Gas Sensor Signal Acquisition Method: Amplifying Sensor Signals and Enabling Efficient Gas Identification by Kangwook Choi, Ryun‐Han Koo, Jinwoo Park, Donghee Kim, Jaehyeon Kim, Hunhee Shin, Gyuweon Jung, Jong‐Ho Lee

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Influence of Surface Isolation Layers on High-Voltage Tolerance of Small-Pitch 3D Pixel Sensors by Jixing Ye, Gian-Franco Dalla Betta

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TCAD Simulation Study of Electrical Performance of a Novel High-Purity Germanium Drift Detector by Mingyang Wang, Zheng Li, Bo Xiong, Yongguang Xiao

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Multi‐Channel, Amorphous Oxide Thin‐Film Transistor Exhibiting High Mobility of 67 cm2 V−1 s−1 and Excellent Stability by Mohammad Masum Billah, Md Mobaidul Islam, Sunaina Priyadarshi, Jung Bae Kim, Yang Ho Bae, Rodney Lim, Dejiu Fan, Zero Hung, Dong Kil Yim, Soo Yong Choi, Youron Lin, Juergen Grillmayer, Custer Ma, Lynn Yang, Julian Chen, Jin Jang

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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs by Franco Ercolano, Luigi Balestra, Sebastian Krause, Stefano Leone, Isabel Streicher, Patrik Waltereit, Michael Dammann, Susanna Reggiani

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Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes by Junyeol Lee, Hanggyo Jung, Donghyun Jin, Jongwook Jeon

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Effect of Rising Time on AC Stress-Induced Performance Degradation in a-ITGZO Thin-Film Transistors by Mingu Kang, Kyoungah Cho, Sangsig Kim

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Charge Sheet Super Junction in 4H-Silicon Carbide: Practicability, Modeling and Design by K. Akshay, Shreepad Karmalkar

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Device Modeling Based on Cost-Sensitive Densely Connected Deep Neural Networks by Xiaoying Tang, Zhiqiang Li, Lang Zeng, Hongwei Zhou, Xiaoxu Cheng, Zhenjie Yao

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Scaling, Leakage Current Suppression, and Simulation of Carbon Nanotube Field-Effect Transistors by Weixu Gong, Zhengyang Cai, Shengcheng Geng, Zhi Gan, Junqiao Li, Tian Qiang, Yanfeng Jiang, Mengye Cai

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Multilevel Operation in Scaled Back-End-of-Line Ferroelectric FETs With a Metal Interlayer by Chiara Rossi, Daniel Lizzit, David Esseni

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Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT by Yuan Li, Yong Huang, Jing Li, Huiqing Sun, Zhiyou Guo

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Characterization and simulation of AlGaN barrier structure effects in normally-off recessed gate AlGaN/GaN MISHEMTs by An-Chen Liu, Hsin-Chu Chen, Po-Tsung Tu, Yan-Lin Chen, Yan-Chieh Chen, Po-Chun Yeh, Chih-I Wu, Shu-Tong Chang, Tsung-Sheng Kao, Hao-Chung Kuo

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Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions by Eungi Hwang, Jang Hyun Kim, Sangwan Kim, Garam Kim

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Mitigating Pass Gate Effect in Buried Channel Array Transistors Through Buried Oxide Integration: Addressing Interference Phenomenon Between Word Lines by Yeongmyeong Cho, Yeon-Seok Kim, Min-Woo Kwon

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Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits by Jiarui Zhang, Yikun Li, Shijun Luo, Yan Zhang, Man Luo, Hailu Wang, Chenhui Yu

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Soft Error in Saddle Fin-Based DRAM at Cryogenic Temperature by Minsang Ryu, Minki Suh, Jonghyeon Ha, Minji Bang, Dabok Lee, Hojoon Lee, Hyunchul Sagong, Dong-Seok Kim, Jungsik Kim

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An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs by Yicong Dong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, Shaloo Rakheja

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