Showing 81 - 100 results of 104 for search '"Spintronics"', query time: 0.04s Refine Results
  1. 81

    Magnetoresistance Effect in NiFe/BP/NiFe Vertical Spin Valve Devices by Leilei Xu, Jiafeng Feng, Kangkang Zhao, Weiming Lv, Xiufeng Han, Zhongyuan Liu, Xiaohong Xu, He Huang, Zhongming Zeng

    Published 2017-01-01
    “…Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications. Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes. …”
    Get full text
    Article
  2. 82

    Nonlinear Optics in Two-Dimensional Magnetic Materials: Advancements and Opportunities by Ziqian Xin, Bingyuan Xue, Wenbo Chang, Xinping Zhang, Jia Shi

    Published 2025-01-01
    “…Finally, we discuss the prospects and challenges for applying nonlinear optics to 2D magnetic materials, emphasizing their potential in next-generation photonic and spintronic devices.…”
    Get full text
    Article
  3. 83

    Magnetoelectric effect in van der Waals magnets by Kai-Xuan Zhang, Giung Park, Youjin Lee, Beom Hyun Kim, Je-Geun Park

    Published 2025-01-01
    “…We also highlight the promising route of utilizing quantum magnetic hetero- or homo-structures to engineer the ME effect and corresponding spintronic and optoelectronic device applications. Due to the intrinsic two-dimensionality, vdW magnets with those ME effects are expected to form a new, exciting research direction.…”
    Get full text
    Article
  4. 84
  5. 85

    Realization of a spin-1/2 Kondo necklace model with magnetic field-induced coupling switch by Hironori Yamaguchi, Yu Tominaga, Takanori Kida, Koji Araki, Takashi Kawakami, Yoshiki Iwasaki, Kenta Kimura, Masayuki Hagiwara

    Published 2025-01-01
    “…This offers other opportunities for quantum technologies, particularly in the development of tunable qubits for quantum computing and spintronic devices, where precise control over spin interactions is essential.…”
    Get full text
    Article
  6. 86

    Spin hall magnetoresistance and spin seebeck effect in Pt|CoCr2O4 heterostructures by Aisha Aqeel, Matthias Kronseder, Nynke Vlietstra, Hans Huebl, Jeroen A. Heuver, Beatriz Noheda, Javier Herrero-Martín, Eric Pellegrin, Hari B. Vasili, Maxim Mostovoy, Christian Back

    Published 2025-01-01
    “…This study offers insights into spin-current-driven phenomena, paving the way for potential spintronic applications.…”
    Get full text
    Article
  7. 87

    Abnormal chirality in antiferromagnetic resonance modes of van der Waals 2D magnets by Chao Chen, Cuixiu Zheng, Shanshan Hu, Hao-Hsuan Chen, Jianwei Zhang, Yaowen Liu

    Published 2025-01-01
    “…These findings provide valuable insights into the intrinsic antiferromagnetic resonance characteristics of atomically thin vdW materials and their potential implications for the development of spintronic devices.…”
    Get full text
    Article
  8. 88

    Spontaneous Small Biskyrmions in a Centrosymmetric Rare-Earth Kagome Ferrimagnet by Shulan Zuo, Kaiming Qiao, Zhan Wang, Ying Zhang, Chengbao Jiang, Baogen Shen

    Published 2024-03-01
    “…Abstract Magnetic skyrmions with nontrivial topologies have great potential to serve as memory cells in novel spintronic devices. Small skyrmions were theoretically and experimentally confirmed to be generated under the influence of external fields in ferrimagnetic films via Dzyaloshinskii–Moriya interactions (DMIs). …”
    Get full text
    Article
  9. 89

    Investigating the Influence of Single Fe and Two Fe co-doping on the Structural and Magnetic Properties of Monolayer Pt2Te4 Pentagonal: A First Principle Study by Mojtaba Gholami

    Published 2024-07-01
    “…The manipulation of magnetic characteristics in 2D materials is essential for their utilization in spintronic and magnetic devices. this study was carried out to investigate the doping process involving a single Fe dopant and the co-doping of two Fe impurities at the Pt site within the Pt2Te4 monolayer. …”
    Get full text
    Article
  10. 90

    Topologically influenced terahertz emission in Co2MnGa with a large anomalous Hall effect by Ruma Mandal, Ren Momma, Kazuaki Ishibashi, Satoshi Iihama, Kazuya Suzuki, Shigemi Mizukami

    Published 2024-06-01
    “…To extend the applicability of THz waves, the present objective is to develop an efficient, compact, durable, and low-cost THz emitter source. A spintronic THz emitter consisting of a ferromagnetic/nonmagnetic bilayer heterostructure is a promising innovation that can provide an alternative solution/replacement for conventional THz emitters. …”
    Get full text
    Article
  11. 91

    Unveiling an in-plane Hall effect in rutile RuO2 films by Meng Wang, Jianbing Zhang, Di Tian, Pu Yu, Fumitaka Kagawa

    Published 2025-01-01
    “…Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes.…”
    Get full text
    Article
  12. 92

    Guanine-based spin valve with spin rectification effect for an artificial memory element by Nicusor Iacob, Cristina Chirila, Mama Sangaré, Andrei Kuncser, Anda E. Stanciu, Marcela Socol, Catalin C. Negrila, Mihaela Botea, Claudiu Locovei, Gabriel Schinteie, Aurelian C. Galca, Anca Stanculescu, Lucian Pintilie, Victor Kuncser, Bogdana Borca

    Published 2025-01-01
    “…The non-volatile resistance states of the multiferroic spintronic junction with two-terminals are manipulated by a combined action of small external magnetic and electric fields. …”
    Get full text
    Article
  13. 93

    Spin transport properties in a topological insulator sandwiched between two-dimensional magnetic layers by Nezhat Pournaghavi, Banasree Sadhukhan, Anna Delin

    Published 2025-01-01
    “…., the proximity effect, different phases such as the quantum Hall phase or the quantum anomalous Hall(QAH) phase emerge, displaying interesting transport properties for spintronic applications. The QAH phase displays sidewall chiral edge states, which leads to the QAH effect. …”
    Get full text
    Article
  14. 94

    Design Considerations for Sub-1-V 1T1C FeRAM Memory Circuits by Mohammad Adnaan, Sou-Chi Chang, Hai Li, Yu-Ching Liao, Ian A. Young, Azad Naeemi

    Published 2024-01-01
    “…Our results are compared with other emerging memory technologies, particularly magnetic/spintronic memories, in terms of read/write latencies and energy consumption. …”
    Get full text
    Article
  15. 95

    Unconventional Anomalous Hall Effect Driven by Self‐Intercalation in Covalent 2D Magnet Cr2Te3 by Keke He, Mengying Bian, Samuel D. Seddon, Koushik Jagadish, Andrea Mucchietto, He Ren, Erik Kirstein, Reza Asadi, Jaeil Bai, Chao Yao, Sheng Pan, Jie‐Xiang Yu, Peter Milde, Chang Huai, Haolei Hui, Jiadong Zang, Renat Sabirianov, Xuemei M. Cheng, Guoxing Miao, Hui Xing, Yu‐Tsun Shao, Scott A. Crooker, Lukas Eng, Yanglong Hou, Jonathan P. Bird, Hao Zeng

    Published 2025-01-01
    “…Abstract Covalent 2D magnets such as Cr2Te3, which feature self‐intercalated magnetic cations located between monolayers of transition‐metal dichalcogenide material, offer a unique platform for controlling magnetic order and spin texture, enabling new potential applications for spintronic devices. Here, it is demonstrated that the unconventional anomalous Hall effect (AHE) in Cr2Te3, characterized by additional humps and dips near the coercive field in AHE hysteresis, originates from an intrinsic mechanism dictated by the self‐intercalation. …”
    Get full text
    Article
  16. 96

    Mutual control of electric and magnetic orders near room temperature in Al doped Y-type hexaferrite single crystals by Pengzheng Li, Mengfang Yu, Lin Yang, Qiutian Duan, Yinchen Wu, Aihua Zhang, Min Zeng, Meifeng Liu, Xingsen Gao

    Published 2025-03-01
    “…Realizing robust magnetoelectric (ME) coupling effect near room temperature is still a long-standing challenge for the application of multiferroic materials in next-generation low-power spintronic and memory devices. Here we report a systematic study on the magnetic, dielectric, and ME coupling properties of Y-type hexaferrite Ba0.5Sr1.5Co2Fe12–xAlxO22 (x = 0.0, 0.5, 1.0) single crystals. …”
    Get full text
    Article
  17. 97

    Accelerating spin Hall conductivity predictions via machine learning by Jinbin Zhao, Junwen Lai, Jiantao Wang, Yi‐Chi Zhang, Junlin Li, Xing‐Qiu Chen, Peitao Liu

    Published 2024-12-01
    “…Abstract Accurately predicting the spin Hall conductivity (SHC) is crucial for designing novel spintronic devices that leverage the spin Hall effect. …”
    Get full text
    Article
  18. 98

    Structural properties and recrystallization effects in ion beam modified B20-type FeGe films by Jiangteng Liu, Ryan Schoell, Xiyue S. Zhang, Hongbin Yang, M. B. Venuti, Hanjong Paik, David A. Muller, Tzu-Ming Lu, Khalid Hattar, Serena Eley

    Published 2025-01-01
    “…This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. …”
    Get full text
    Article
  19. 99

    Non-volatile voltage-controlled magnetization in single-phase multiferroic ceramics at room temperature by Zimeng Hu, Gavin B.G. Stenning, Hangfeng Zhang, Yu Shi, Vladimir Koval, Wanting Hu, Zhiyong Zhou, Chenglong Jia, Isaac Abrahams, Haixue Yan

    Published 2025-01-01
    “…Single-phase multiferroics (MFs) exhibiting ferroelectricity and ferromagnetism and the strong magnetoelectric (ME) coupling effect at room temperature are seen as key to the development of the next-generation of spintronic devices, multi-state memories, logic devices and sensors. …”
    Get full text
    Article
  20. 100

    Magnetochiral charge pumping due to charge trapping and skin effect in chirality-induced spin selectivity by Yufei Zhao, Kai Zhang, Jiewen Xiao, Kai Sun, Binghai Yan

    Published 2025-01-01
    “…Abstract Chirality-induced spin selectivity (CISS) generates giant spin polarization in transport through chiral molecules, paving the way for novel spintronic devices and enantiomer separation. Unlike conventional transport, CISS magnetoresistance (MR) violates Onsager’s reciprocal relation, exhibiting significant resistance changes when reversing electrode magnetization at zero bias. …”
    Get full text
    Article